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SIS472ADN Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIS472ADN-T1-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 24A POWERPAK1212	Original	PDF	563.62KB

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Vishay Intertechnologies


Vishay Intertechnologies SIS472ADN-T1-GE3 - Tape and Reel (Alt: SIS472ADN-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIS472ADN-T1-GE3	Tape & Reel		52 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.18	Buy Now
Newark ()	SIS472ADN-T1-GE3	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.25	Buy Now
	SIS472ADN-T1-GE3	Tape & Reel			100	1 - 10 - 100 $0.37 1000 $0.35 10000 $0.35	Buy Now
	SIS472ADN-T1-GE3	Cut Tape			5	1 - 10 $0.40 100 $0.37 1000 $0.35 10000 $0.35	Buy Now
TTI	SIS472ADN-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.21	Buy Now
TME	SIS472ADN-T1-GE3				1	1 $0.81 10 $0.53 100 $0.32 1000 $0.22 10000 $0.20	Get Quote
EBV Elektronik	SIS472ADN-T1-GE3			53 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIS472ADN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SiS472ADN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.0085 at VGS = 10 V 24 0.0105 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 12.8 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS • Notebook CPU Core 3.30 mm	Original	sis472adn sis472adn-t1-ge3 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
62639 Contextual Info: SiS472ADN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	sis472adn an609 2962u 4146u +78244m 3748m 3513m 5716m 8642m 25-jun-12 62639	PDF
Contextual Info: SiS472ADN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.0085 at VGS = 10 V 24 0.0105 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 12.8 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS • Notebook CPU Core 3.30 mm	Original	sis472adn sis472adn-t1-ge3 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SPICE Device Model SiS472ADN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sis472adn 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: SiS472ADN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.0085 at VGS = 10 V 24 0.0105 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 12.8 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS • Notebook CPU Core 3.30 mm	Original	sis472adn sis472adn-t1-ge3 2011/65/eu 2002/95/ec +112-mar-12	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF