SI88 Search Results

si88

Abstract: SI8808DB-T2-E1 si8808
Contextual Info: New Product Si8808DB Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.095 at VGS = 4.5 V 2.5 0.105 at VGS = 2.5 V 2.3 0.120 at VGS = 1.8 V 2.2 0.165 at VGS = 1.5 V 1.9 • • • • • Qg (Typ.)

si8805

Abstract: si88
Contextual Info: New Product Si8805EDB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A)a 0.068 at VGS = - 4.5 V - 3.1 0.088 at VGS = - 2.5 V - 2.7 0.155 at VGS = - 1.5 V - 2.1 0.290 at VGS = - 1.2 V - 0.5 • • • •

si8812

Abstract: si88 AGS3
Contextual Info: New Product Si8812DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A)a 0.059 at VGS = 4.5 V 3.2 0.061 at VGS = 3.7 V 3.1 0.065 at VGS = 2.5 V 3.0 0.085 at VGS = 1.8 V 2.7 • • • • • Qg (Typ.)

si88

Contextual Info: Si8800EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

si8802

Contextual Info: Si8802DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: New Product Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.080 at VGS = 4.5 V 2.8 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • Halogen-free According to IEC 61249-2-21

Contextual Info: IC MOSFET SMD Type Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor SI8822 TSSOP-8 • Features Unit: mm ● VDS V = 20V ● ID = 7A (VGS=10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 24mΩ (VGS = 4.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V)

Si8809EDB

Contextual Info: New Product Si8809EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.090 at VGS = - 4.5 V - 2.6 0.119 at VGS = - 2.5 V - 2.3 0.155 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product Si8802DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.054 at VGS = 4.5 V 3.5 VDS (V) 8 0.060 at VGS = 2.5 V 3.3 0.068 at VGS = 1.8 V 3.1 0.086 at VGS = 1.5 V 2.3 0.135 at VGS = 1.2 V 1.0 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si8819EDB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 RDS(on) (Ω) Max. ID (A) a, e 0.080 at VGS = -3.7 V -2.9 0.100 at VGS = -2.5 V -2.6 0.190 at VGS = -1.8 V -1.9 0.280 at VGS = -1.5 V -0.5 MICRO FOOT 0.8 x 0.8

Contextual Info: Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) Max. ID (A) a, e 0.135 at VGS = -4.5 V -2.3 0.150 at VGS = -3.7 V -2.1 0.215 at VGS = -2.5 V -1.8 MICRO FOOT 0.8 x 0.8 S 3 xxx xx 5.2 nC

Contextual Info: Si8808DB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) a 0.095 at VGS = 4.5 V 2.5 VDS (V) 30 • TrenchFET power MOSFET Qg (TYP.) • Small 0.8 mm x 0.8 mm outline area • Low 0.4 mm max. profile

Contextual Info: SPICE Device Model Si8817DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si8800EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 MICRO FOOT 0.8 x 0.8 S 3 xxx

Contextual Info: SPICE Device Model Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: Si8810EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.072 at VGS = 4.5 V 2.9 VDS (V) 20 0.079 at VGS = 2.5 V 2.8 0.092 at VGS = 1.8 V 2.6 0.125 at VGS = 1.5 V 2.2 • • • • • Qg (Typ.) 3 nC TrenchFET Power MOSFET

Si8809EDB

Abstract: si8809
Contextual Info: New Product Si8809EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 a RDS(on) () ID (A) 0.090 at VGS = - 4.5 V - 2.6 0.119 at VGS = - 2.5 V - 2.3 0.155 at VGS = - 1.8 V - 2.0 • • • • • • Qg (Typ.) 6 nC MICRO FOOT

si88

Contextual Info: Si8805EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: New Product Si8802DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.054 at VGS = 4.5 V 3.5 VDS (V) 8 0.060 at VGS = 2.5 V 3.3 0.068 at VGS = 1.8 V 3.1 0.086 at VGS = 1.5 V 2.3 0.135 at VGS = 1.2 V 1 • • •

Contextual Info: Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • • • • • Qg (Typ.) 3.2 nC TrenchFET Power MOSFET

Contextual Info: SPICE Device Model Si8824EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model Si8808DB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si8802DB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si8824EDB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter