SI8810EDB Search Results

Contextual Info: Si8810EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.072 at VGS = 4.5 V 2.9 VDS (V) 20 0.079 at VGS = 2.5 V 2.8 0.092 at VGS = 1.8 V 2.6 0.125 at VGS = 1.5 V 2.2 • • • • • Qg (Typ.) 3 nC TrenchFET Power MOSFET

Contextual Info: Si8810EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) a 0.072 at VGS = 4.5 V 2.9 0.079 at VGS = 2.5 V 2.8 0.092 at VGS = 1.8 V 2.6 0.125 at VGS = 1.5 V 2.2 VDS (V) 20 MICRO FOOT 0.8 x 0.8

Contextual Info: SPICE Device Model Si8810EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: Si8810EDB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm