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    SIR770DP Search Results

    SIR770DP Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIR770DP-T1-GE3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8A 8SO Original PDF 14
    SF Impression Pixel

    SIR770DP Price and Stock

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    Vishay Intertechnologies SIR770DP-T1-GE3

    MOSFET 2N-CH 30V 8A PPAK SO8
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    DigiKey () SIR770DP-T1-GE3 Tape & Reel 3,000
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    SIR770DP-T1-GE3 Digi-Reel 1
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    Avnet Americas SIR770DP-T1-GE3 Tape & Reel 20 Weeks 3,000
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    Mouser Electronics SIR770DP-T1-GE3 5,222
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    Chip Stock SIR770DP-T1-GE3 24,728
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    EBV Elektronik SIR770DP-T1-GE3 21 Weeks 3,000
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    IBS Electronics SIR770DP-T1-GE3 9,000 3,000
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    Vishay Siliconix SIR770DP-T1-GE3

    SIR770DP-T1-GE3 by SILICONIX (VISHAY) is a N-channel MOSFET with 100V drain-source voltage, 80A continuous drain current, 4.5V gate threshold, and 3.5mΩ on-resistance, ideal for power management applications.
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    IBS Electronics SIR770DP-T1-GE3 3,000 3,000
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    Vishay Huntington SIR770DP-T1-GE3

    MOSFET 2N-CH 30V 8A PPAK SO-8 / Mosfet Array 30V 8A 17.8W Surface Mount PowerPAK? SO-8 Dual
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    Win Source Electronics SIR770DP-T1-GE3 21,228
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    SIR770DP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SPICE Device Model SiR770DP www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR770DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiR770DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V a, f Qg (Typ.) 8.0


    Original     		SiR770DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    12706

    Contextual Info: SiR770DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiR770DP AN609, 1179m 16-Sep-10 12706 PDF

    Contextual Info: SiR770DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 30 Channel-2 30 RDS(on) () ID 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V (A)a, f 8.0 8.0 8.0 8.0


    Original     		SiR770DP 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiR770DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V a, f Qg (Typ.) 8.0


    Original     		SiR770DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiR770DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V a, f Qg (Typ.) 8.0


    Original     		SiR770DP 2002/95/EC 11-Mar-11 PDF

    Contextual Info: SiR770DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V a, f Qg (Typ.) 8.0


    Original     		SiR770DP 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF