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    SIA447DJ Search Results

    SIA447DJ Datasheets (1)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIA447DJ-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 12A SC-70-6L Original PDF 9
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    SIA447DJ Price and Stock

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    Vishay Intertechnologies SIA447DJ-T1-GE3

    Power MOSFET, P Channel, 12 V, 12 A, 0.011 ohm, PowerPAK SC-70, Surface Mount - Tape and Reel (Alt: SIA447DJ-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIA447DJ-T1-GE3 Tape & Reel 52 Weeks 3,000
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    Mouser Electronics SIA447DJ-T1-GE3
    • 1 $1.03
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    Newark () SIA447DJ-T1-GE3 Cut Tape 1
    • 1 $1.29
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    SIA447DJ-T1-GE3 Tape & Reel 10
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    SIA447DJ-T1-GE3 Bulk 5
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    SIA447DJ-T1-GE3 Tape & Reel 3,000
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    TTI SIA447DJ-T1-GE3 Reel 3,000
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    TME SIA447DJ-T1-GE3 1
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    Avnet Asia SIA447DJ-T1-GE3 54 Weeks 3,000
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    EBV Elektronik SIA447DJ-T1-GE3 53 Weeks 3,000
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    Vishay Huntington SIA447DJ-T1-GE3

    MOSFET P-CH 12V 12A SC-70-6L
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIA447DJ-T1-GE3 15,000
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    SIA447DJ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SiA447DJ

    Contextual Info: SPICE Device Model SiA447DJ www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the P-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    sia447dj2011/65/eu2002/95/ec12-mar-12 PDF

    Contextual Info: New Product SiA447DJ Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A) 0.0135 at VGS = - 4.5 V - 12a 0.0194 at VGS = - 2.5 V - 12a 0.0344 at VGS = - 1.8 V - 12a 0.0710 at VGS = - 1.5 V -3 Qg (Typ.)


    Original
    sia447djsc-70-6l-singlesc-702002/95/ec+32011/65/eujs709a02-oct-12 PDF

    sia447dj

    Contextual Info: New Product SiA447DJ Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A) 0.0135 at VGS = - 4.5 V - 12a 0.0194 at VGS = - 2.5 V - 12a 0.0344 at VGS = - 1.8 V - 12a 0.0710 at VGS = - 1.5 V -3 Qg (Typ.)


    Original
    sia447djsc-70sc-70-6l-single2011/65/eu+22002/95/ec12-mar-12 PDF

    Contextual Info: SPICE Device Model SiA447DJ www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the P-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    sia447dj2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Contextual Info: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


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    aon2240aon2401aon2405aon2406+14aon2407aon2408aon2409aon2410aon2420aon2701nx3008irlhs6242sia431djssm6j503nuirlhs2242dmn3730ufb4fdma1028nzfdma3028n PDF

    Contextual Info: LT8584 2.5A Monolithic Active Cell Balancer with Telemetry Interface Description Features 2.5A Typical Average Cell Discharge Current n Integrated 6A, 50V Power Switch n Integrates Seamlessly with LTC680x Family: No Additional Software Required n Selectable Current and Temperature Monitors


    Original
    lt8584ltc680x16-leadltc6802+5ltc6803ltc6804ta03altc3300-148-lead PDF

    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original
    sc-70sia519edjcom/mosfets/powerpak-sc-70-package/vmn-pt0131-1402 PDF

    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original
    sc-75si1865ddlsi7997dpsia923aedj+5sia929djsc-70sia527djsia537edjvmn-pt0197-1402 PDF

    Contextual Info: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


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    1212-8ssi7157dpsiss23dnsi5415aedu+2com/mosfets/12-rated-on-res/vmn-ms6912-1406 PDF

    SiA427DJ

    Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


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    sc-70com/mosfets/powerpak-sc-70-package/vmn-pt0131-1209sia427dj+6sia450djsia447djsia413djsia413sia445edjsia915dj PDF

    Si7141

    Abstract: SiA447DJ SI7615A
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


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    sc-75sc-70vmn-pt0197-1209si7141+2sia447djsi7615a PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8si-4102si4599si4483asir166irfd120si7949si4459asir836 PDF

    SI7615A

    Abstract: LTC6802-1
    Contextual Info: LT8584 2.5A Monolithic Active Cell Balancer with Telemetry Interface Description Features 2.5A Typical Average Cell Discharge Current n Integrated 6A, 50V Power Switch n Integrates Seamlessly with LTC680x Family: No Additional Software Required n Selectable Current and Temperature Monitors


    Original
    lt8584ltc680x16-leadc3300-1+648-leadltc6802-1ssop-44ltc6803-1/ltc6803-3si7615a PDF

    balancer battery

    Contextual Info: LT8584 2.5A Monolithic Active Cell Balancer with Telemetry Interface Description Features 2.5A Typical Average Cell Discharge Current n Integrated 6A, 50V Power Switch n Integrates Seamlessly with LTC680x Family: No Additional Software Required n Selectable Current and Temperature Monitors


    Original
    lt8584ltc680x16-leadltc6802+6ltc6803ltc6804ta03altc3300-148-leadbalancer battery PDF