BBS3S31 Search Results

B35AP

Contextual Info: Philips Sem iconductors bbS3S31 □OSISb'l T13 • APX NPN 4 GHz wideband transistor ^ Product specification ^ BFQ34T N AriER PHILIPS/PISCRETE b'lE P PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The

oscilloscope pc

Abstract: BAS28 BAW62
Contextual Info: • bbS3S31 N AHER 0Q24B7Ö TS7 H A P X PHILIPS/DISCRETE b7E BAS28 D SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists o f tw o separate diodes in one m icro m in ia tu re envelope intended fo r surface m ou n tin g . It concerns fast-sw itching general-purpose diodes.

Contextual Info: • bbS3S31 Q02M355 330 H A P X N AMER PHILIPS/DISCRETE BAV70 b7E J> JV SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV70 consists o f tw o diodes in a microminiature plastic envelope. The cathodes are commoned and the unit is intended for high-speed switching in thick and thin-film circuits.

BZV55 3V9

Abstract: GG-25 bt 1690 bzv 400 5v6 k3 BZV55 BZV55B BZV55C DDES737 diode Cathode indicated by yellow band
Contextual Info: •I bbS3S31 GG25732 354 H A P X N AMER PHILIPS/DISCRETE BZV55 SERIES b7E D VOLTAGE REGULATOR DIODES FOR SURFACE MOUNTING S ilico n planar diodes designed fo r use as low-voltage stabilizers o r voltage references. T he y are available in th e in te rn a tio n a l standardized E24 ± 5% range, and also in tolerance ranges o f 2% and 3%.

Contextual Info: N AI1ER PHILIPS/DISCRETE bTE bbS3S31 □D27flflb 2^0 » A IAPX BSV64 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-39 metal envelope primarily intended for use as a print hammer drive. It has good high current saturation characteristics. QUICK REFERENCE DATA

Contextual Info: bTE D bbS3S31 QD2blb3 MET H A P X BA423 N AUER P H I L I P S / D I S C R E T E _ / SILICON A.M. BAND SWITCHING DIODE The BA423 Is a switching diode in hermetically sealed glass DO-34 envelope. Intended for band switching in a.m. radio receivers. QUICK REFERENCE DATA

BLW84

Abstract: transistor tt 2222 C 829 transistor TT 2222 npn TT 2222 SOT123 C 828 Transistor transistor L6
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3S31 002^441 Sfl3 IAPX BLW84 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is guaranteed to w ith­

hsb 772 p

Abstract: BFG31 BFG97 UBB347 UBB348
Contextual Info: • bbS3S31 0024fl0M 483 HIAPX Philips Sem iconductors Product specification N AMER PHILIPS/DISCRETE b?E D PNP 5 GHz wideband transistor c BFG31 PINNING FEATURES • High output voltage capability PIN • High gain bandwidth product 1 emitter DESCRIPTION • Good thermal stability

C6V8 PH

Abstract: C5V6 ph PH C5V1 C4V7 PH C5V1 ph C6V2 PH PH C3V6 PH c9v1 C7V5 PH 1R SOT89
Contextual Info: • bbS3S31 00SS723 341 H A P X N AMER PHILIPS/DISCRETE b7E » BZV49 SERIES J V SILICON PLANAR VOLTAGE REGULATOR DIODES Silicon planar voltage regulator diodes, in a SOT-89 plastic envelope, intended fo r stabilization applica­ tions in thick and th in -film circuits.

Contextual Info: N ANER PHILIPS/DISCRETE LTE D bbS3S31 DD30Mfl0 70b « A P X Product Specification Philips Semiconductors BUK437-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

20/IGBT FF 450

Contextual Info: N AMER PHILIPS/DISCRETE b'lE ]> • bbSBIBl 0 0 3 0 1 :1.1 633 « A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor Protected IGBT QUICK REFERENCE DATA GENERAL DESCRIPTION Protected N-channel insulated gate bipolar power transistor in

BLW 95

Contextual Info: h*\E t> m b b s a ^ a i o o s T H b i o?i i IAPX N A PIER PHILIPS/DISCRETE BLW 86 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is

BST62

Abstract: BST60 BST61
Contextual Info: • bb53T31 DD2Sb41 4flb H A P X N AMER PHILIPS/DISCRETE BST60 BST61 BST62 b7E ]> JV P-N-P SILICON PLANAR DARLINGTON TRANSISTORS Silicon p-n-p planar Darlington transistors for industrial switching applications, e.g. print hammer, solenoid, relay and lamp driving. Encapsulated in a microminiature plastic SOT-89 envelope.

Philips FA 261

Contextual Info: Philips Semiconductors N bbS B IB l AMER 0 0 2 5 TtiT M A P X PH ILIP S /D IS C R E TE Product specification b?E D NPN 9 GHz wideband transistor FEATURES BFS505 PIN CONFIGURATION PINNING PIN DESCRIPTION • Low current consumption • High power gain •

CD074

Contextual Info: bb53T31 D DES IS1! D01 Philips Semiconductors N AMER PHI LIP S/DISCRETE APX NPN 5 GHz wideband transistor FEATURES Product specification b7E D £ BFR92A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Low Intermodulation distortion 1 base

Contextual Info: N AMER P H I L I P S / D I S C R E T E b^E D • bbS3T31 0030715 N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications.

BSR12

Abstract: sot-23 MARKING CODE ZA DGSS
Contextual Info: m □ □¡255b4 0T5 H A P X N AMER PHILIPS/DISCRETE BSR12 b7E » SILICON LOW-POWER SWITCHING TRANSISTORS P-N-P silicon transistor in a m icrom iniature plastic envelope. It is intended fo r high-speed, saturated switching applications fo r industrial service in th ick and th in -film circuits.

Silicon P-Channel Junction FET sot23

Abstract: DMOSFET p-channel P-Channel Enhancement FET uma* philips p-channel mos sot23 vertical mosfet BSS84 DMOSFET pchannel
Contextual Info: • Philips Semiconductors Data sheet status Product specification date of issue July 1993 ttS3"131 DDSBSIA BSS84 N AMER P H I L I P S / D I S C R E T E Silicon p-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. It is intended for use In general purpose and high­

Contextual Info: • bb53^31 0 02S c17b MMfl H A P X N AMER PHILIPS/DISCRETE PXT3906 b7E » SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a SOT-89 envelope primarily intended fo r high-speed, saturated switching applications fo r industrial service. QUICK REFERENCE DATA

BSW68A 1990

Abstract: bsw68a
Contextual Info: N AMER PHILIPS/DISCRETE LTE D • bbS3^31 00273^1 bSfl B A P X l BSW66A to 68A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK REFERENCE DATA BSW66A BSW67A BSW68A VCBO

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D • bb53^31 □OEfl'lbb E7D H A P X BLV31 y v . V.H.F. LINEAR PO W ER T R A N SIS T O R N-P-N silicon planar epitaxial transistor primarily intended for use in linear v.h.f. amplifiers for

Contextual Info: • bbSB'iai DDESTb? 435 » A P X N AMER PHILIPS/DISCRETE P XT2222/A b?E D ;v SILICON PLANAR EPITAXIAL TRANSISTOR NPN silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended for switching and linear applications. The complementary type is PXT2907/A.

diode sy 200

Abstract: UCM0J
Contextual Info: P h ilip * S e m ic o n d u c to r* Product specification Heavy duty optocouplers CNW11AV-1/2/3 FEATU RES • Minimum 2 mm Isolation thickness between emitter and receiver • A wide body encapsulation with a pin distance of 10.16 mm • An external clearance of 9.6 mm

transistor npn d 2058

Abstract: 2PD601A
Contextual Info: Philips Semiconductors BB bb53T31 N APIER 002b055 473 IA P X NPN general purpose transistor FEATURES objective specification b7E PHILIPS/DISCRETE 2PD601; 2PD601A PIN CONFIGURATION • High DC current gain • Low collector-emitter saturation voltage. DESCRIPTION