100 N 37 TRANSISTOR Search Results

Contextual Info: International S Rectifier Provisional Data Sheet No. PD-9.1417 IRFN3710 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL Product Summary 100 Volt, 0.028£2, HEXFET Part Number B V dss RDS on Id IR F N 37 10 100 V 0 .0 2 8 Q 45A Generation 5 H E X F E T s from International Rectifier

IRF 9110

Abstract: FR9110 FU9110 IRFR9111
Contextual Info: HE INTERNATIONAL RECTIFIER D | MÖS5452 QQQÖ324 7 | Data Sheet No. PD-9.519B T-37-25 IOR INTERNATIONAL- RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFR9110 IRFRS111 IRFU9110 IRFU9111 P -C H A N N E L Product Summary -100 Volt, 1.2 Ohm HEXFET

pj 88 diode

Abstract: pj 59 diode irfu9120 pj 84 diode IRFR9120 irfr 9120 irfu9121 IRFR9121 irff* p-channel hexfet C82 diode
Contextual Info: HE D | MflSSMSS Q0Qfl332 fc» | Data Sheet No. PD-9.520B INTERNATIONAL R E C T I F I E R T-37-25 INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFR9120 IRFR9121 IRFUS120 IRFU0121 P -C H A N N E L -100 Volt, 0.60 Ohm HEXFET

UNITRODE TRANSISTORS

Abstract: F-111
Contextual Info: ^5 UNITRODE CORP □D1GÛ21 7 T ~ Ô347963 UNITRODE CORP 92 D 10821 D/ -37-0 UFNF110 UFNF111 U F N F I 12 u fn fiis POWER MOSFET TRANSISTORS 100 Volt, 0.60 Ohm N-Channel D E S C R IP T IO N The Unltrode power M O S F E T d esign utilizes the m ost advanced technology available.

STH65N05

Abstract: STH65N05FI 65260a
Contextual Info: STH65N05 STH65N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH65N05 STH65N05FI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.02 Ω < 0.02 Ω 65 A 37 A TYPICAL RDS(on) = 0.017 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

D44C3

Abstract: saia
Contextual Info: NATL SEMICOND This Material DISCRETE HE D | t S D 1 1 3 D „□□3 ?lfl3 b | C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r T - 3 3 'Oi This NPN Bipolar Power Transistors Continued 45 5 10* 55 25 10 D44C5 TO-220 (37) 45 5 100

Contextual Info: • SIP 32E D ■ 023b32G QQlbö?^ PNP Silicon High-Voltage Transistors B F N 37; B F N 39 _ SIEMENS/ SPCLi SEMICONDS T - 33-/7 Suitable lor video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage

The 8002 Amplifier IC

Abstract: 8002 Amplifier IC t4 and 0570 2N3741 New England Semiconductor 2n3741 IC 8002 2N3740 2N3766 2N3741A 2N3767
Contextual Info: 2N3740* 2N3741* 2N3741A *also available as JA N , JA N TX , JA NTXV MEDIUM-POWER PNP TRANSISTORS .ideal for use as drivers, switches and medium-power amplifier application. These devices feature: • • • • • POWER TRANSISTOR PNP SILICON 60 - 80 VOLTS

2N3798

Abstract: 2N3799 MPQ3798 MPQ3799 RNW transistor
Contextual Info: MPQ3798 silicon MPQ3799 QUAD DUAL-IN-LINE PNP SILICON ANNULAR AMPLIFIER TRANSISTORS QUAD DUAL-IN LINE PNP SILICON AMPLIFIER TRANSISTORS . . . designed for low-level, low-noise amplifier applications. • DC Current Gain Specified - 10/jA dc to 10 mAdc h fE = 1^0 (Min) @ lc = 500 jjAdc — MPQ3798

NE02136

Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
Contextual Info: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­

d1878

Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
Contextual Info: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258

al 232 nec

Abstract: NE64400 NE644 NE64408 S21E
Contextual Info: N E C / C A L IF O R N I A SbE ]> • bM2741M 0QD2417 2MD H N E C C -r r -3 l NPN SILICON HIGH FREQUENCY TRANSISTOR 7 NE64400 NE64408 FEATURES DESCRIPTION AND APPLICATIONS • LO W N O IS E F IG U R E : 2.7 d B at 4 GHz The NE644 is the latest in a series of NPN silicon transistors

darlington opto coupler

Abstract: FCD850 FCD850C FCD855 FCD855C opto 4N33
Contextual Info: CouplersTransistor Output Cont’d Max Ratings (a! TA 25°C Diode Transistor ic VCEO V Vr V mA V iso kV 1.5 Device No. PD mW ÏIL111 ! TIL112 TIL114 « TIL115 TIL116 TIL117 TIL118 250 — 30 3.0 100 250 — 20 3.0 100 1.5 250 — 30 3.0 100 2.5 250 — 20

2SC2407 equivalent

Abstract: 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600
Contextual Info: N E C/ 1SE CALIFORNIA L4H7414 D 0001.310 L> T -3 H T T NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE: 1 dB at 70 MHz The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The

NE24600

Abstract: NE24620 2SC2952 2SC2953 NE24615
Contextual Info: SEC N E C / CALIFORNIA SbE D Li4274m 00G237S Tbl « N E C C " 1 7 3 5 -0 5 NE24600 NE24615 NE24620 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • E X C E L L E N T IM DISTO RTIO N C H A R A C T E R IS T IC S A T HIG H O U T P U T LEV E LS :

Contextual Info: SynSEMi T O -92 Plastic Encapsulate Transistors SYMSEMI SEMICONDUCTOR BC3 37, -16, -25,-40 n p n transistor BC3 38, -16, -25,-40 FEATURES Power dissipation PCM : 0.625 W (Tamb=25 °C) Collector current Icm • 0.8 A Collector base voltage V cbo : BC337

HXTR-5103

Contextual Info: HEliJLETT-PACKARDi C MPNT S E OE D □ 4447SÔ4 OOOSS41 =1 □ K ’h n b H E W LETT HOM P A C K A R D _ ~ X '~ 1 'i~ 0 5 L inear P ow er Transistors HXTR-5001 Chip Technical D ata 2N6701 HXTR-5101, TX andTXV 2N6741 (HXTR-5103, TX andTXV) Features D escription

NEC 41-A 002

Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E
Contextual Info: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for

2SC1253

Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733
Contextual Info: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for

TN6Q04

Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
Contextual Info: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15

of all 74 ic series

Abstract: 2SC3140 2SC3139 NEL080525-28 NEL0800 NEL080120-28 NEL080220-28 J279 J430 j6925
Contextual Info: N E C / CALIFORNIA NEC SbE 3> • b457Mm Q0QES43 213 *NECC NEL080120-28 NEL080220-28 NEL080525-28 CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATING S FEATURES SYM BOLS • H IGH LIN EA R P O W E R PARAM ETERS Ta = 25°C UNITS R A TIN G S

mesa

Contextual Info: Nicht für Neuentwicklung PN P~M esatransistor für Antennenverstärker bis 900 M Hz A F Y 37 AFY 37 ist ein epitaktischer PNP-Germanium-HF-Transistor in Mesa-Technik im Gehäuse 18A 4 DIN 41 876 TO-72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. DerTransistor

Contextual Info: PNP Transistors * / % D isc re te P O W E R & S ig n a l T e c h n o lo g ie s National Semiconductor" P N P D arlin g to n T ra n s is to rs V CBO vV CES v EBO *CBO Case Style MPSA63 TO-92 92 30 0.1 30 MPSA64 TO-92 (92) 30 0.1 MPSA65 TO-92 (92) 30 0.1 (V)

NE41607

Abstract: NC921 Z171 NE41600 ne41635 2SC2025 50m1n NE416 NE41615 Z128
Contextual Info: NEC/ CALIFORNIA SbE ]> NEC • b4E7Mm OOOSBTG 27ê BINECC NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • L O W N O IS E FIG U R E : 1 d B at 70 M H z The N E416 series of N P N transistors is one of the most versatile and widely used of N E C 's microwave transistors. T h e