023B32G Search Results

Contextual Info: • SIP 32E D ■ 023b32G QQlbö?^ PNP Silicon High-Voltage Transistors B F N 37; B F N 39 _ SIEMENS/ SPCLi SEMICONDS T - 33-/7 Suitable lor video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage

Contextual Info: 32E D • Ö23b32ü QG172^b S [SIP SN 7002 SIPMOS N Channel MOSFET SIEMENS/ SPCLi SEMICONDS • • • • • _ SIPMOS - enhancement mode Draln-source voltage Vtt = 60V Continuous drain current I d = 0.19A Drain-source on-resistance fios on = 5.00 Total power dissipation

2907A

Contextual Info: 3SE m D fl23b320 00171ÔÔ h * SIP PNP Silicon Switching Transistors PZT 2907;PZT 2907A SIEMENS/ S P C L i SEMICONDS _ -1— 3*7- 1*7 Type Marking Ordering code 12-mm tape Package* PZT 2907 ZT 2907 Q62702- Z2028 SOT-223 PZT 2907A ZT 2907A Q62702• Z2025

Contextual Info: BEE D • flEBbBBG 0G17203 *\ «SIP NPN Silicon Darlington Transistors P ZTA 13; P Z TA 14 “ SIEMENS/ SPCL-i SEMICONDS • • • • For general A F applications High collector current High current gain Complementary types: PZ TA 63 / 64 PNP Type M arking

Contextual Info: . 1 35E D • _ 62313350 0017331 7 ■ ISIP SXT A 42 SXT A 43 NPN Silicon High Voltage Transistors SIEMENS/ SPCLi SEMICONDS • High breakdown voltage • Low collector-em itter saturation voltage Type M a rk in g O rd e rin g c o d e for v e rs io n s in b u lk

g 995

Contextual Info: 32E D m 023b32Q OOlbôQ? 3 H S I P BF 995 Silicon N Channel MOSFET Tetrode SIEMENS/ SPCLi SEMICONDS _ For FM and VHF TV input and mixer stages Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package BF 995 MB Q62702-F872

Contextual Info: BEE d GaAs MMIC • • • • • • • • • • 023b3E0 SIEMENS/ 0Gl?3bQ 3 «SIP SPCLi SEMICONDS CGY50 Single-stage, monolithic microwave IC M M IC amplifier Cascadable 50 i i gain block Application range: 100 MHz to 3 GHz Third order intercept point 30 dBm typical at 1.8 GHz

Contextual Info: 3SE D • flS3t.33Q 0 0 1 7 0 1 ^ S m S I P NPN Silicon RF Transistor T "2 l-f 7 _ SIE M E N S / SPCL-. SEMICONDS _ BFR • For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 to 30 mA. S CECC-type available: CECC 50002/256.

KJE transistor

Contextual Info: 32E D • flS3b3EG DOlb^S 4 « S I P NPN Silicon RF Transistor 3 1 -^ 3 SIEMENS/ SPCLi SEMICONDS T ' BFQ 19S _ • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 to 70 mA.

Contextual Info: 35E D • 023b3SG NPN Silicon RF Transìstor 0Q lbflñ3 & « S IP BFP 81 _SIEMENS/ SPCLi SEMICONDS f-3<- 1*7_ • For low-noise amplifiers up to 2 GHz at collector currents from 0.5 to 25 mA. S CECC-type In preparation: CECC 50002/. ESD : Electrostatic discharge sensitive device, observe handling precautions!