0D37 Search Results

2n2222 to-92

Abstract: 2N4970 MPS3393 2N2219 transistor PN2218 2n2222 to92 2N4954 FR 9024 MMBT3704 PN2219
Contextual Info: NATL SEMICOND DISCRETE H2E D M T -Z l-ai t,SD1130 0D37772 3 • NPN General Purpose Transistors by Ascending Vceo (continued) Part Type MPS3393 MPS3394 MPS3395 MPS3396 MPS3397 MPS3398 MPS5172 MPS6515 MPS6520 MPS6521 MPS6522 MPS6560 PE4010 PE8050 PN3565 PN5135

Contextual Info: S O LITRON DEVICES INC 4ÔE D Ö3bßb02 []0D377ki TTT SOD T-5<S-IH3 "vü O LITR O N DEVICES PRODUCT SPECIFICATION R egulator TYPE NO. 1% -5 5 ° C t o +125°C Si General Purpose |« v. j - DEVICE MARKING CJSE038 G NPN IIPNP ro 1 O 1- cusT. +12 V o l t CLASS

TIPL774

Abstract: P6019 P6020 lZ-300 P6042 TIP41 K041 TIP41 Texas Instruments NPN Transistor 30A 400V
Contextual Info: TEXAS I NS TR -COPTO} 8961726 TEXAS De J IN S T R O P T O 0D37Cm 62 C 3 7 0 9 1 r TIPL774 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTOR O C T O B E R 1 9 8 2 - R E V IS E D O C T O B E R 1 9 8 4 T-3 3 - 2 9 20 A Continuous Collector Current 150 W at 50°C Case Temperature

nsdu57

Abstract: TO-237 2N6556 2N5415
Contextual Info: NATL SEMICÔND DISCRETE ESE D • bSG113Q 0D377flfi 7 ■ T-2 7-01 PNP Medium Power Transistors by Ascending Vceo (Continued) H fe @ Ic/V ce Vce (sat) (V) Max Part No. Vceo (V) Min Max (mA/V) 2N4236 2N6710 2N6729 2N6732 92PE77C 92PU56 D41E7 D43C10 D43C11

NSD134

Abstract: NSD459 NSD458 NSD133 NSE459 TO-202 D40N2 2N3440 nse458 2N6712
Contextual Info: NATL SEMICOND DISCRETE 52E D • T Z‘ 2~7~0/ bSG113Q 0D377flb 3 ■ NPN Medium Power Transistors by Ascending Vceo (continued) Part No. Vceo (V) Min Hfe @ lc/Vce Max ' (mA/V) Vce (sat) (V) Max lc/lb Package (mA)/(mA) PN7055 220 40 10/20 1.0 20 TO-92 D40P5

Contextual Info: TEXAS INSTR - COPTO} 8961726 TEXA S ^2 IN S T R DE <OPTO> 0D37D‘ìl f 62C 3 7 0 9 1 TIPL774 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTOR OCTOBER 19 8 2 - R EV ISED O CTOBER 1984 20 A Continuous Collector Current T -3 3 -2 9 150 W at 5 0 °C Case Temperature

TDA8708T

Abstract: TDA8708 IEC134 S028 "Digital Comparator" 3117 3/TDA8708
Contextual Info: Philips Product specification T - 7 7 -0 7 -1 3 Video analog input interface TDA8708 PHILIPS INTERNATIONAL SbE D • 7110flSb 0D370L.1 Hbb ■ P H I N FEATURES GENERAL DESCRIPTION • 8-bit resolution

MOTOROLA 2N6277

Abstract: 2N6277 applications MOTOROLA 2N6277 DIE 2N6382 3-7946 2N6277 2N6380
Contextual Info: MOTOROLA SC O I O D E S / O P T O J 6367255 MOTOROLA SC 34 DE I b 3 b ? a S S <D I O D E S / O P T O 34C 0D37i4ti S | ~ 37946 1 SILICON POWER TRANSISTOR DICE continued) 2C6277 PNP 3 3 - 0 / 2C6379 / DIE NO. — NPN LINE SOURCE — PL500.70 NPN ~ ~ D die n o .

fro 108

Contextual Info: b£E » • b4S7525 0D37S04 553 MNECE_ N E C ELECTRONICS INC LASER DIODE /_ NDL5735PA 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP D C P B H LASER DIODE MODULE DESCRIPTION N D L 5 7 3 5 P A is a 1 310 nm laser diode DIP m odule w ith singlemode fib e r w ith o u t therm o-electric cooler. It incorporates

Contextual Info: H A R R I S SEMICOND SECTOR 44E D 4 3 0 E 271 m 0D37513 T fflHAS T ^ ¥ Q ~ ö f-ö 5 U H A R R IS CD4076B Types Features: CMOS 4-Bit D-Type Registers • T h re e-sta te o u tp u ts « I n p u t d isa b le d w it h o u t g a tin g th e c lo c k ■ G a te d o u t p u t c o n tr o l lin e s f o r

PN222A

Abstract: 2N2222A TO-92 BSR14 2N3904 TO-92 type PN544 TN2219 2NS904 MPS6574 NPN transistor 2N2222A in T0-92 package Transistor 2N2222A
Contextual Info: NATL SEMICOND DISCRETE SEE D • bSQ113Q 0D37773 S ■ T-Z7-0! NPN General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Min V Cbo(V) Min Min Max Ic/V c (mA/V) Ft (MHz) Min PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 30 30 30 30 30 30 30

NSDU57

Abstract: NSD206 T0202 power 22E 2N4236 2N6710 2N6729 2N6732 92PE77C 92PU56
Contextual Info: NATL SEfllCOND DISCRETE E2E D • bSQ113ü 0D377ÖÖ 7 ■ T- 27-ÙI PNP Medium Power Transistors by Ascending Vceo (Continued) Hfe Max Part No. Vceo (V) Min 2N4236 2N6710 2N6729 2N6732 92PE77C 92PU56 D41E7 D43C10 D43C11 D43C12 NSD204 NSD205 NSDU56 TN4033

MJ901

Abstract: 2N6055 MOTOROLA 2N6053 MOTOROLA MJ900 2N6053 2N6301 MOTOROLA 2n6299 motorola 2c6301
Contextual Info: M O T O R O L A SC { D I O D E S / O P T O } 6367255 34 D l f | b3b?ESS MOTOROLA SC <DIODES/OPTO 34C 37950 SILICON POW ER TR A N SISTO R DICE continued) 2C6301 DIE NO. — NPN LINE SOURCE — PL500.410 NPN 0D37TSD D _ q 2C6299 / / DIE NO. — PNP LINE SOURCE — PL500.411

2N3646

Abstract: MPS3013 2N5772 2n3647 2N3009 2N2501 mps2501 2n3s11 2n3510 2N3648
Contextual Info: M O T O R O L A SC -CDIODES/OPTOJ [ 6367255 MOTOROLA SC 34 DE | b 3 b ? a S 5 34C DIODES/OPTO 0D37Tfl(a 37986 T “ %5~- t y SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 2C3511 DIE NO. — NPN LINE SOURCE — DMB104 » This die provides performance similar to that of the following device types:

ndl3200a

Abstract: NDL3200
Contextual Info: b4S?S2S 0D37MS0 SS2 • N E C E bEE D N E C LASER DIODE ELECTRONICS INC N D L 3 2 0 0 A 670 nm POINTER APPLICATION AIGalnP DOUBLE HETEROSTRUCTURE VISIBLE LASER DIODE D E SC R IPTIO N N D L 3 2 0 0 A is an A IG a lnP 6 7 0 nm visible laser diode and especially developed fo r Pointer.

DIODE 31D

Abstract: 31D DIODE
Contextual Info: bEE D • b427525 0D37Mbô 7bS « N E C E LIGHT EM ITTIN G DIODE NDL4103L1 850 nm O PT IC A L FIBER C O M M U N IC A T IO N S A IG a A s LIGHT EM IT TIN G D IO D E N E C ELECTRONICS INC D E S C R IP T IO N N D L4 1 0 3 L1 is an A IG aA s double heterostructure tight emitting diode, especially designed for a light source for optical fiber

mjec15030

Abstract: transistor motorola parameters S transistor NPN mjec15031 2N6416 2N6418 5031-PNP 2N6417 MJE-15031 SILICON DICE motorola
Contextual Info: MOTOROLA [ SC 34 {D IO D E S /O PTO 6367255 MOTOROLA SC D [F|b3b75S5 DIODES/OPTO 34c SILICON POWER TRANSISTOR DICE (continued) DIE NPN PNP 37967 y. NO.MJEC15030—NPN LINE SOURCE — PL500.E532 0D37Tb7 DIE ^ NO.MJEC1 5031—PNP LINE SOURCE — PL500.E533

PN222A

Abstract: 2N2222A TO-92 2N3904 TO-92 type to236 2N2222A
Contextual Info: NATL SEMICOND DISCRETE SEE D • bS0113Q 0D37773 S ■ T -Z 7 -0 Ì NPN General Purpose Transistors by Ascending Vceo (continued) lc /V < * (m A /V ) Ft (MHz) Min 600 120 300 120 300 300 300 10/10 150/10 150/10 150/10 150/10 50/2.0 150/10 700 250 250 250

M27C1001

Contextual Info: 55E Æ 7 m J> 7 CI 2 CJ 2 3 7 0D37b05 S G S -1 H O M S O N * 7 / ìbO •S6TH S G S-THOMSON IÜKg»KQO gS 5 T-^ 6 -1 3 -2 ^ M27C1001 CMOS 1 Megabit (128K x 8 UV EPROM and OTP ROM ■ VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE

DA 2688

Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
Contextual Info: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055

Contextual Info: IN STR t5 -COPTO} DlfJû'ifcilTSb 8961726 TEXAS INSTR COPTO 0G37D27 . 62C 37027 7"-33-/3 TIPL753, TIPL753A N-P-N SILICON POWER TRANSISTORS 1982 - REVISED OCTOBER 1984

philips fm demodulator satellite

Abstract: philips PLL FM DEMODULATOR fm pll demodulator detector pll fm demodulator TDA8730 fm demodulator A244 demodulator frequency satellite tuners philips FM tuners
Contextual Info: Philips Semiconductors Preliminary specification T-77-05&#39;-05' PLL FM demodulator for DBS signals_ PHILIPS INTERNATIONAL GENERAL DESCRIPTION The TDA8730 is a sensitive PLL demodulator for the second IF and direct broadcasting satellite DBS

km 1667

Abstract: KM732V696-13 KM732V696-15 KM732V6961
Contextual Info: PRELIMINARY KM732V696/L 64Kx32 Synchronous SRAM Rev 0.0 ELECTRONICS 7*^4142 0G372b7 fllT This Material Copyrighted By Its Respective Manufacturer PRELIMINARY KM732V696/L 64Kx32 Synchronous SRAM 64K x 32 - Bit Synchronous Pipelined Burst SRAM FEA T U R ES G E N E R A L DESCRIPTIO N

LB 124 transistor

Abstract: LB 124 d MPQ6427 transistor BC 236 16-SOIC 2N6427 MMBT6427
Contextual Info: 2N6427/MMBT6427/MPQ6427 NATL SEMICOND OISCRETE 11E: D | k 501130 T-33-21 5 ^ N a tio n a l J l A S e m ic o n d u c to r 2N6427 E llllll Ull MMBT6427 MPQ6427* TO “ 236 S O T - 23 T O -9 2 ^ | C =E 10-116 TL/G/10100-7 TL/Q/10100-5 Bc TUG/10100-1 NPN Darlington Transistor