FDIP32W Search Results

Contextual Info: M27C2001 2 Mbit 256Kb x 8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 55ns ■ LOW POWER CONSUMPTION: - Active Current 30mA at 5MHz - Standby Current 1OOjaA ■ PROGRAMMING VOLTAGE: 12.7 5 V ± 0.25V FDIP32W (F)

Contextual Info: M27V801 LOW VOLTAGE 8 Megabit 1Meg x 8 UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 120ns LOW POWER “CMOS” CONSUMPTION: – Active Current 35mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V 32 1 FDIP32W (F)

M27C1001

Contextual Info: M27C1001 1 Mbit 128 Kbit x 8 UV EPROM and OTP EPROM Features • 5v ± 10% Supply Voltage in Read Operation ■ Access Time: 35ns ■ Low Power Consumption: – Active Current: 30 mA at 5 MHz – Standby Current: 100 µA 32 32 FDIP32W (F) ■ Programming Voltage: 12.75V ± 0.25V

Contextual Info: M27C2001 2 Mbit 256Kb x 8 UV EPROM and OTP EPROM Features • 5V ± 10% supply voltage in Read operation ■ Access time: 55ns ■ Low power consumption: – Active Current 30mA at 5MHz – Standby Current 100µA FDIP32W (F) Programming voltage: 12.75V ± 0.25V

M27C801

Contextual Info: M27C801 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM Features • 5 V ± 10% supply voltage in Read operation ■ Access time: 55 ns ■ low Power Consumption: – Active current: 35 mA at 5 MHz – Standby current: 100 µA ) s ( ct 32 1 FDIP32W (F) ■ Programming voltage: 12.75 V ± 0.25 V

Contextual Info: M27W401 4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM Features • 2.7V to 3.6V Supply Voltage in Read Operation ■ Access Time: – 70 ns at VCC = 3.0V to 3.6V – 80 ns at VCC = 2.7V to 3.6V ■ ■ Pin Compatible with M27C4001 1 Programming Time 100 µs/byte

AN620

Abstract: M27C801 PDIP32 PLCC32 TSOP32 VA10
Contextual Info: M27C801 8 Mbit 1 Mb x 8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACC ESS TIME: 45 ns ■ LOW POWER CONSUMPTION: - Active Current 3 5 m A a t5 M H z - Standby Current 100|jA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 100|^s/byte (typical)

M27C1001

Abstract: EEPROM PDIP32 PLCC32 TSOP32
Contextual Info: M27C1001 1 Mbit 128Kb x8 UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Current 30mA at 5Mhz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte (typical)

M27V201

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M27V201 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 120ns ■ LOW POWER CONSUMPTION: – Active Current 15mA at 5MHz 32 32 – Standby Current 20µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

M27V101

Abstract: M27W101 PDIP32 PLCC32 TSOP32
Contextual Info: M27V101 1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM NOT FOR NEW DESIGN • M27V101 is replaced by the M27W101 ■ 3V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION: 32 32 – Active Current 15mA at 5MHz ■

Contextual Info: M27V101 1 Mbit 128Kb x 8 Low Voltage UV EPROM & OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION: – Active Current 15mA at 5MHz – Standby Current 20µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte (typical)

M27C4001

Abstract: M27W401 PDIP32 PLCC32 TSOP32
Contextual Info: M27W401 4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V 32 32 – 80ns at VCC = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C4001 ■ LOW POWER CONSUMPTION: 1

Contextual Info: M27C801 8 Mbit 1 Mb x 8 UV EPROM and OTP EPROM • 5V ±10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: - Active Current 35m Aat5M Hz - Standby Current 100|uA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 100|is/byte (typical)

Contextual Info: £ ÿ j S G S ’T H O M SO N leænLimowigs M27C2001 2 Megabit 256K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100(j.A

Contextual Info: n=ZSGS-THOMSON ^ 7 # . M27V401 EiilDISIMSJIllUKS'D'I^ORaDlgi LOW VOLTAGE 4 Megabit 512K x 8 UV EPROM and OTP EPROM NOT FOR NEW DESIGN • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 120ns ■ LOW P O W E R ’’CMOS” CONSUMPTION: - Active Current 15mA

Contextual Info: /= T ^ 7 i. S G S -T H O M S O N H [l g[S ilLIO T® iD (gi M 27C 2001 2 Megabit (256K x 8 UV EPROM and OTP EPROM • FAST ACCESS TIME: 55ns ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|iA ■ PROGRAMMING VOLTAGE: 12.75V

M27C801

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M27C801 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: 32 32 – Active Current 35mA at 5MHz – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 50µs/word

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

M27V401

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M27V401 4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 120ns LOW POWER CONSUMPTION: – Active Current 15mA at 5MHz – Standby Current 20µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte (typical)

M27C4001

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M27C4001 4 Mbit 512Kb x 8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 35ns ■ LOW POWER CONSUMPTION: 32 32 – Active Current 30mA at 5MHz – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

M27C1001

Abstract: DATASHEET 5609 transistor transistor 5609 TSOP32 Package FDIP32WA JESD97 M27W101 PDIP32 PLCC32 TSOP32
Contextual Info: M27W101 1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM Features • 2.7V to 3.6V Low Voltage in Read Operation ■ Access Time: – 70 ns at VCC = 3.0V to 3.6V – 80 ns at VCC = 2.7V to 3.6V ■ Pin compatible with M27C1001 ■ Low Power Consumption:

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

M27C801

Abstract: M27V801 M27W801 PLCC32 TSOP32
Contextual Info: n=Z SCS-THOMSON ^ 7 # , RfilDÊlMSJlilLIlÊ'inEORODtgS M27V801 LOW VOLTAGE 8 Megabit 1 Meg x 8 UV EPROM and OTP EPROM N O T F O R N E W D E S IG N • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 120ns ■ LOW POWER “CMOS” CONSUMPTION: