B3B75S5 Search Results

Contextual Info: M O T O R O L A SC -CDIODES/OPTOJ ! I 6 3 6 7 2 5 5 MOTOROLA SC 34 ßF|b3b75S5 34C <DI O D E S / O PT O D03Û1Û3 3 | 38183 r - x t - n MMCF2221, MMCF2221A SILICON) MMCF2222, MMCF2222A FLIP-CHIP NPN SWITCH AND AMPLIFIER TRANSISTORS F lip -C h ip — General purpose N P N sw itching and a m p lifie r transistor

2N6576

Abstract: SILICON DICE motorola 2N6578
Contextual Info: MOTOROLA SC O I O D E S / O P T O } 6367255 MOTOROLA 34 SC DE|b3b75S5 D I O D E S /O P T O GD37ma 37942 D T '3 3 ~0 ( SILICON POW ER TRANSISTOR DICE (continued) 2C6056 DIE NO. — NPN LINE SOURCE — PL500.10 T his die provides perform ance equal to or better than that of

CMOS 4560 motorola

Abstract: 74HC157 74hc157 on
Contextual Info: MOTOROLA SC Í L O G I O 05 m T| b3b75S5 00Û0B3S M T-é¿-2/-5í MOTOROLA S E M IC O N D U C TO R TECHNICAL DATA MC54/74HC157 MC54/74HC158 Quad 2 -In p u t Data Selectors/ M ultiplexers J SUFFIX CERAMIC CASE 620-09 High-Performance Silicon-Gate CM OS The MC54/74HC157 and HC158 are identical in pinout to the LS157 and LS158.

Contextual Info: MOTOROLA SC 6367255 34 -CDIODES/OPTO} MOTOROLA SC b3b75S5 0030204 7 DIODES/OPTO 34C 38204 D MICRO-T (continued) MMT75 — PNP MMT76 — NPN GENERAL PURPOSE TRANSISTORS • designed for general-purpose switching and amplifier applications and for complementary circuitry where highdensity packaging is required.

MMT75

Abstract: MMT76 9.1 V
Contextual Info: MOTOROLA SC 6367255 -CDIODES/OPTO} MOTOROLA SC 34 b3b75S5 DIODES/OPTO 34C 0030204 38204 D MICRO-T (continued) MMT75 MMT76 — PNP — NPN GENERAL PURPOSE TRANSISTORS • designed for general-purpose switching and amplifier applications and for complementary circuitry where highdenslty packaging is required.

mjec15030

Abstract: transistor motorola parameters S transistor NPN mjec15031 2N6416 2N6418 5031-PNP 2N6417 MJE-15031 SILICON DICE motorola
Contextual Info: MOTOROLA [ SC 34 {D IO D E S /O PTO 6367255 MOTOROLA SC D [F|b3b75S5 DIODES/OPTO 34c SILICON POWER TRANSISTOR DICE (continued) DIE NPN PNP 37967 y. NO.MJEC15030—NPN LINE SOURCE — PL500.E532 0D37Tb7 DIE ^ NO.MJEC1 5031—PNP LINE SOURCE — PL500.E533

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One W att Darlington Transistors MPSW13 MPSW14 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating C ollecto r- Emitter Voltage Symbol Value Unit Vdc VCES 30 C ollector-B ase Voltage VCBO 30 Vdc E m itter-B ase Voltage

mpf102

Abstract: mpf102 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF Amplifier N-Channel — Depletion MAXIMUM RATINGS Symbol Value VDS 25 Vdc Drain-Gate Voltage Vd G 25 Vdc Gate-Source Voltage Rating Drain-Source Voltage Unit vgs -2 5 Vdc Gate Current 'g 10 mAdc Total Device Dissipation @ Ta = 25°C

MAD1103P

Abstract: mad1108P MAD130 MAD1107P MAD130P MAD1103 MAD130C 817 opto IFR 740 MAD1103F
Contextual Info: MOTOROLA SC DIODES/OPTO bêE » • b3b?255 DDÔ7H1] MAD130 MADI103 MAD1107 MAD1108 MOTOROLA <§ SEMICONDUCTORS P .O . B O X 2 0 9 1 2 • P H O E N IX . A R I Z O N A TÛD ■ M0T7 85036 DIODE ARRAY These diode arrays are m u ltip le diode ju n c tio n s fa b rica te d by a

MLL5236B

Abstract: MLL5243B MLL5221B MLL5222B MLL5223B MLL5224B MLL5225B MLL5226B MLL5227B MLL5228B
Contextual Info: M O T O R O L A SC D I O D E S / O P T O 3TE D E9 b 3 b 7 B S S 00fi3fl41 1 E3I10T7 MLL5221B thru MLL5263B T -n -n E LE C TR IC A L C H ARACTERISTICS (T* = 25'C unless otherwise noted. Based on dc measurements at thermal equilibrium; case temperature maintained at 30 + 2°C. VF= 0.9 Max @ lF = 10 mA for all types.)

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M C100LVEL29 M C100EL29 Dual Differential Data and Clock D Flip-Flop With Set and Reset The MC100LVEL29 is a dual m aster-slave flip flop. The device features fully differential Data and Clock inputs as well as outputs. The

"marking nh"

Abstract: 1SMB10 1SMB10A 1SMB11 1SMB11A 1SMB12 1SMB12A 1SMB13 1SMB170 403A-01
Contextual Info: M O T O R O L A SC D IOD ES / OP T O 5SÉ b3L7555 DDÒIBET □ J> MOTOROLA Order this data sheet by 1SMB5.Ô/D T - a - 2 3 SEMICONDUCTOR piivjì TECHNICAL DATA 1SMB5.0, A Zener O vervoltage Transient Su p p re sso rs thru 1SM B170, A . . . this device is designed specifically for transient voltage suppression. The wide leads

MGT01000

Abstract: CS thyristor cs 3-04 7623A MGT01200 pearson 411 1N6292 221A-04 SG diodes high speed low power thyristor Gate Turn-Off Thyristors
Contextual Info: MOTOROLA SC DIODES/OPTO k3b?2S5 0001103 =| • 25E D r - a s w f Gate Turn-Off Thyristors The GTO is a family of asym metric gate turn-off thyristors designed primarily for dc power switching applications such as motor drives, switching power supplies, inverters, or wherever a need exists for high surge current capabilities and fast

SG DIODE

Abstract: ic Thyristor firing circuit GT01000 MGT01200 GTO MOTOROLA
Contextual Info: M O T O R O L A SC DIODE S/ OP TO h3b7'2SS GQail03 =| • 2SE D r - a s w f MGT01000 MGT01200 Gate Turn-Off Thyristors The GTO is a fam ily of asym m etric gate turn-off thyristors designed prim arily for dc pow er sw itching applications such as m otor drives, sw itching pow er supplies,

Contextual Info: MOTOROLA SC DIODES/OPTO 5S E b3b7SSS D 0DÔ1337 T Order this data sheet by 1.5SMC6.8/D MOTOROLA SEMICONDUCTOR T-//-A3 TECHNICAL DATA 1.5SMC6.8, A thru 1.5SMC200, A Zener Overvoltage Transient Su ppressors . . . the 1 .5 S M C 6 .8 se rie s is d e sig n e d to protect vo lta ge sensitive c o m p o n e n ts from high

MCR3918-2

Abstract: 79192 MCR3918
Contextual Info: M O T O R O L A SC -CDIODES/OPTOï 01 bBti7SS5 D O T T l ñ ñ i T MCR3818 Series MCR3918 Series Silicon Controlled Rectifier Reverse Blocking Triode Thyristor . . . d esig ned fo r in d ustrial and co n su m e r ap plications such as pow er su pp lies, battery ch arg ers, tem perature, m otor, light and w eld er controls.

Contextual Info: M O T O R O L A SC D I O D E S / O P T 0 b3L?555 OOÔ13Db T SSE D Order this data sheet by MUR3005W T MOTOROLA T ' i i ' O I _ • SEMICONDUCTOR ■ ■ ■ TECHNICAL DATA MUR3005W T thru Sw itchm ode Pow er Rectifiers . designed for use in switching power supplies, inverters and as free wheeling diodes,