PN222A
Abstract: 2N2222A TO-92 2N3904 TO-92 type to236 2N2222A
Contextual Info: NATL SEMICOND DISCRETE SEE D • bS0113Q 0D37773 S ■ T -Z 7 -0 Ì NPN General Purpose Transistors by Ascending Vceo (continued) lc /V < * (m A /V ) Ft (MHz) Min 600 120 300 120 300 300 300 10/10 150/10 150/10 150/10 150/10 50/2.0 150/10 700 250 250 250
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bs0113q0d37773pn3566pn3641+10pn3643pn4141pn4142pn5449tn22192n1613pn222a2n2222a to-922n3904 to-92 typeto236 2n2222a
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S8302
Abstract: S8303 NPDS8301 NPDS8302 NPDS8303
Contextual Info: S e m i c o n d u c t o r " & NPDS8301 NPDS8302 NPDS8303 D2 s2 S O -8 * * S1 D1 N-Channel General Purpose Dual Amplifier Sourced from P rocess 83. Absolute Maximum Ratings* Symbol T A = 25 ° C u n le ss oth e rw ise noted Parameter Value Units V dg Drain-Gate Voltage
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npds8301npds8302npds8303bsq1130+2s8302s8303
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BD371C-10
Abstract: BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6
Contextual Info: NATL S E M IC O N D H E D IS C R E T E D • tS0 1 1 3 D 0Q371SB fi 1 S -a CM T" O z CM eg Y~ o CM r* ST -f u T-03-01 « e 3 m o o s i o « 0 *c a) /) c o z Sï (/) « fl «?&2 <D » <D o f X a Jr i o Û) 8 S to CO LU o CL k. w o Q. m S's U o o o o o o o o
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b50113dl5d1130t-03-01bd371c-10+9bd371dbf494bf936yc 236b055bc338-25 national semiconductorbd371bbd371cbd371c-6
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BC338 hie hre hfe
Abstract: BD371C-10 bc368 hie BD370B-10 BD371D BD371C BF936 BF494 BF495 b055
Contextual Info: National Bipolar Pro Electron Series Semiconductor c/> Case Style VCEO VeBO V (V) Min Min Ices ’ •cBOg. (nA) Max 50* TO-92 (97) 60* BC327-10 TO-92 (97) 50* 45 5 100* 45 40 63 BC327-16 TO-92 (97) 50* 45 5 100* 45 40 100 TO-92 (97) 50* TO-92 (97) 30' TO-92
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b501130bs01130t-03-01bc338 hie hre hfe+9bd371c-10bc368 hiebd370b-10bd371dbd371cbf936bf494bf495b055
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T0-202
Abstract: 2n6549
Contextual Info: bflE D Devices Volts Mtn 100 NPN 2N7051 PNP h « @ lc lc Max (Amps) Min 1 20,000 2N7053 1 2N6725 1 mA mA ma 100 1.4 200 200 200 1A 1.5 200 0.2 200 25,000 200 1.0 200 2mA 100 15,000 500 1.5 1A 2mA 100 Max 20,000 20,000 P o (A n k) Package TO-92(94) (Watts)
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bs0113q2n70512n7053o-226+6o-2372n6725d40c7d40k2t0-2022n6549
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NDS9410A
Contextual Info: May 1996 National Semiconductor" NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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bc2378
Abstract: box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633
Contextual Info: This Material Pro Electron Series Copyrighted 3> -i PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET By Type No. Its BC107 Respective BC107A Case Styl« TO-18 TO-18 VCES* VC8 0 (VI Min 50 50 VCEO (V) Min V e BO (V) Min 45 6 45 6 'CES* 'CBO a V CB (Vi
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ts0113dj15511sd1130bc2378+9box33cb0345b0348b0735b0346b073bb0736b0737b0633
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2N3567
Abstract: NSDU07 transistor 2N3569 "NPN Transistors" 2n3567 NSD102 NSD458 2n3568 2N3569 92PU393 D40E5
Contextual Info: This 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40 35 20 2N1711 TO-5 75 35 7 10 60 40 100 75 35 20 120 120 300 150 10 5.0 1.3 150 20 50 50 12 500 150 10 100 fiA 10 10 10 10 1.5 1.3 150 25 60 50 12 Note 1 12 500 150 10 100 pA IO jiA
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b501l3a0370mmt-27-cit-27-01+102n3567nsdu07transistor 2n3569npn transistors" 2n3567nsd102nsd4582n35682n356992pu393d40e5
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