NPDS8301 Search Results

S8302

Abstract: S8303 NPDS8301 NPDS8302 NPDS8303
Contextual Info: S e m i c o n d u c t o r " & NPDS8301 NPDS8302 NPDS8303 D2 s2 S O -8 * * S1 D1 N-Channel General Purpose Dual Amplifier Sourced from P rocess 83. Absolute Maximum Ratings* Symbol T A = 25 ° C u n le ss oth e rw ise noted Parameter Value Units V dg Drain-Gate Voltage

NPDS8301

Abstract: NPDS8302 NPDS8303
Contextual Info: NPDS8301 NPDS8302 NPDS8303 S2 NC D2 G2 G1 NC SO-8 S1 D1 N-Channel General Purpose Dual Amplifier Sourced from Process 83. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VDG Drain-Gate Voltage 40 VGS Gate-Source Voltage

Contextual Info: B E M iC O N P U C T O R m NPDS8301 NPDS8302 NPDS8303 N-Channel General Purpose Dual Amplifier Sourced from Process 83. Absolute Maximum RatitlQS TA = 25°C unless otherwise noted Parameter Symbol Value Units V V dg Drain-Gate Voltage 40 V gs Gate-Source Voltage

Contextual Info: D iscrete POW ER & S ig n a l Technologies S - S V J iO O N O L iC ì T O ^ ! •••:•: NPDS8301 NPDS8302 NPDS8303 N-Channel General Purpose Dual Amplifier Sourced from Process 83. Absolute Maximum Ratings* Symbol TA = 25 °C unless otherwise noted Parameter

Contextual Info: D is c re te PO W E R & S ig n a l T ech n ologies SE M C O N O U C T Q R ; NPDS8301 NPDS8302 NPDS8303 N-Channel General Purpose Dual Amplifier Sourced from Process 83. Absolute Màximum RâtinÇjS Symbol TA = 25°C unless otherwise noted Parameter Value Units

2n5248

Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
Contextual Info: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640

NPDS402

Abstract: TO-69 NPDS403 NPDS404 NPDS406 NPDS5565 NPDS5566 NPDS5911 NPDS5912 NPDS8301
Contextual Info: This _JFETs Material tr Discrete POWER & Signal Technologies National In a Semiconductor tH IH ÜJ ” General Purpose Dual JFETs a Copyrighted o □ -p a -C □9 ÜJ J] By ru Its Respective ro k Device No. Case Style Op. Char. ^0«1! ^0* VM « •„ mV

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A

MMBF310

Abstract: bfj113 NPDS PN5434 BF244A MMBF4119 MMBFJ201
Contextual Info: Fairchild Semiconductor [¡ ¡ g ^ g p0Wgr an J 3¡qna| TeChnOlOQÌeS Selection Guides Surface Mount SOT-23, Through-Hole TO-92 and Dual SOB JFETs loss M in/ M ax mA V GS (off M in/M ax Part Number Volts Id |iA Gfs M in/ M ax mS sv 9» M in S0T-23/T0-92 •d s s

S8303

Abstract: S8302 S8304
Contextual Info: JFETs tß Device No. Discrete POWER & Signal Technologies National Semiconductor'“ General Purpose Dual JFETs C ase Style Drift Op. K ,J Char. jiWC Vqo 6 lD (mV( ÄV», (V) (|iA| Max Max V„s G os C M R R (|imho| (dB) (V) Max Min Min Max Max Min N PD S402