S5566 Search Results

smd 1gw

Abstract: diode Z47 1ZB36 1ZB20 zener U1DL49 1ZB20 6B4B41 FAST RECOVERY DIODE 200ns 2a 1B4B41 J2C42
Contextual Info: a SELECTOR GUIDE The following products are recommended for use in any new circuitry designs. General Purpose Rectifiers —> Peak Repetitive Reverse Voltage 600V 1000V 1S 1887 1S 1888 1S 1830 S5277B S5277G S5277J S5277N D O -41S S5566B S5566G S5566J S5566N

225G

Abstract: Toshiba rectifier toshiba Silicon Rectifier Diodes General Semiconductor diode marking 49 toshiba diode 1A S5566B S5566G S5566J S5566N
Contextual Info: S5566B,S5566G,S5566J,S5566N TOSHIBA RECTIFIER SILICON DIFFUSED TYPE S5566B,S5566G,S5566J,S5566N Unit: mm GENERAL PURPOSE RECTIFIER APPLICATIONS Average Forward Current : IF AV = 1A Repetitive Peak Reverse Voltage : VRRM = 100, 400, 600, 1000V MAXIMUM RATINGS (Ta = 25°C)

S5566B

Abstract: S5566G S5566J S5566N
Contextual Info: S5566B/G/J/N SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

S5500G

Abstract: S-8-08FR S-8R-06FR S5103 S5166 S5500D S5102 S5104 S-8R-01FR S5277D
Contextual Info: - m % S5102 S5103 S5104 S5166 S5277B S5277D S5277G S5277J S5277L S5277N S529SB S5295D S5295G S5295J S5500B S5500D S5500G S5566B S5566G S5566J S5566N S5688B S5688G S5688J S5688N S-8 -01 S-8-01FR S -8 -02 S-8-02FR S -8 -04 S-8-04FR S -8 -06 S-8-06FR S-8 -08

STR451

Abstract: ic 501 str-451 ic501 C502 STR 451 L501 F-501 d508 SW501
Contextual Info: D150.D151 ,D152,D590 S5566B D501 2DL10 C151 0511 0,0022 STR-451 A A 0.022 IC 501 C509 0.0027/2KV D503 2DL10 D151 C224 X A D152 D502 2DL10 C152 C590 0.022 0.022 C508 f ] R501 C514 0.1/250V R502 R503 1/2W 1/2W T C502 220/500V 1 1 i1 1 1 _ 1 T 1 T RT502 i !

S5566B

Abstract: S5566G S5566J S5566N
Contextual Info: S5566B, S5566G, S5566J, S5566N SILICON DIFFUSED TYPE GENERAL PURPOSE RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage – 100 to 1000 Volts Average Forward Current – 1.0 Ampere Absolute Maximum Ratings Repetitive Peak Reverse Voltage Peak One Cycle Surge Forward

S5566B

Abstract: S5566G S5566J S5566N
Contextual Info: S5566B,S5566G,S5566J,S5566N TOSHIBA RECTIFIER SILICON DIFFUSED TYPE S5566B, S5566G, S5566J, S5566N Unit: mm GENERAL PURPOSE RECTIFIER APPLICATIONS : IF AV = 1A Average Forward Current Repetitive Peak Reverse Voltage : VRRM = 100, 400, 600, 1000V MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: S5566B/G/J/N IATF 0113686 SGS TH07/1033 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 1000 Volts Io : 1.0 Ampere 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) FEATURES : * * * * * * TH09/2479 TH97/2478 www.eicsemi.com High current capability High surge current capability

Contextual Info: T O SH IB A S5566B,S5566G,S5566J,S5566N TOSHIBA RECTIFIER SILICON DIFFUSED TYPE S5566B, S5566G, S5566J, S5566N Unit in mm GENERAL PURPOSE RECTIFIER APPLICATIONS. • • Average Forward Current Repetitive Peak Reverse Voltage lF V AV = 1A M = 100~1000V r r

SS5566

Abstract: S5566B S5566G S5566J S5566N NL 006 006NL
Contextual Info: TOSHIBA S5566B,S5566G,S5566J,S5566N TOSHIBA RECTIFIER SILICON DIFFUSED TYPE S5566B, S5566G, S5566J, S5566N Unit in mm GENERAL PURPOSE RECTIFIER APPLICATIONS. • • a Average Forward Current : Ip AV —1A Repetitive Peak Reverse Voltage : V rrm = 100~ 1000V

S5500G

Abstract: S5500D S5102 S5103 S5104 S5166 S5277B S5277D S5277G S5277J
Contextual Info: - m m % S5102 S5103 S5104 S5166 S5277B S5277D S5277G S5277J S5277L S5277N S529SB S5295D S5295G S5295J S5500B S5500D S5500G S5566B S5566G S5566J S5566N S5688B S5688G S5688J S5688N S-8 -01 S-8-01FR S -8 -02 S-8-02FR S -8 -04 S-8-04FR S -8 -06 S-8-06FR S-8 -08

S5566B

Contextual Info: S5566B/G/J/N SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

Contextual Info: T O SH IB A S5566B,S5566G,S5566J,S5566N TOSHIBA RECTIFIER SILICON DIFFUSED TYPE S5566B, S5566G, S5566J, S5566N Unit in mm GENERAL PURPOSE RECTIFIER APPLICATIONS. • • Average Forward Current Repetitive Peak Reverse Voltage lF V AV = 1A M = 100~1000V r r

S5500G

Abstract: S5102 S5103 S5104 S5166 S5277B S5277D S5277G S5277J S5277L
Contextual Info: - m % S5102 S5103 S5104 S5166 S5277B S5277D S5277G S5277J S5277L S5277N S529SB S5295D S5295G S5295J S5500B S5500D S5500G S5566B S5566G S5566J S5566N S5688B S5688G S5688J S5688N S-8-01 S-8-01FR S-8-02 S-8-02FR S-8-04 S-8-04FR S-8-06 S-8-06FR S-8-08 S-8-08FR

000707EAA

Abstract: S5566B S5566G S5566J S5566N TOSHIBA RECTIFIER s5566 10A45
Contextual Info: S5566B,S5566G,S5566J,S5566N TOSHIBA RECTIFIER SILICON DIFFUSED TYPE S5566B,S5566G,S5566J,S5566N Unit: mm GENERAL PURPOSE RECTIFIER APPLICATIONS l Average Forward Current : IF AV = 1A l Repetitive Peak Reverse Voltage : VRRM = 100, 400, 600, 1000V MAXIMUM RATINGS (Ta = 25°C)

S5566B

Abstract: S5566G S5566J S5566N
Contextual Info: S5566B, S5566G, S5566J, S5566N SILICON DIFFUSED TYPE GENERAL PURPOSE RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage – 100 to 1000 Volts Average Forward Current – 1.0 Ampere Absolute Maximum Ratings Repetitive Peak Reverse Voltage Peak One Cycle Surge Forward

S5500G

Abstract: S5103 S5102 S5104 S5166 S5277B S5277D S5277G S5277J S5277L
Contextual Info: - m % S5102 S5103 S5104 S5166 S5277B S5277D S5277G S5277J S5277L S5277N S529SB S5295D S5295G S5295J S5500B S5500D S5500G S5566B S5566G S5566J S5566N S5688B S5688G S5688J S5688N S-8 -01 S-8-01FR S -8 -02 S-8-02FR S -8 -04 S-8-04FR S -8 -06 S-8-06FR S-8 -08

S5500G

Abstract: S5102 S5103 S5104 S5166 S5277B S5277D S5277G S5277J S5277L
Contextual Info: - m % S5102 S5103 S5104 S5166 S5277B S5277D S5277G S5277J S5277L S5277N S529SB S5295D S5295G S5295J S5500B S5500D S5500G S5566B S5566G S5566J S5566N S5688B S5688G S5688J S5688N S-8 -01 S-8-01FR S -8 -02 S-8-02FR S -8 -04 S-8-04FR S -8 -06 S-8-06FR S-8 -08

Contextual Info: S5566B,S5566G,S5566J,S5566N TOSHIBA RECTIFIER SILICON DIFFUSED TYPE S5566B,S5566G,S5566J,S5566N GENERAL PURPOSE RECTIFIER APPLICATIONS Unit: mm z Average Forward Current : IF AV = 1A z Repetitive Peak Reverse Voltage : VRRM = 100, 400, 600, 1000V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

S5566B

Contextual Info: S5566B,S5566G,S5566J,S5566N TOSHIBA RECTIFIER SILICON DIFFUSED TYPE S5566B,S5566G,S5566J,S5566N GENERAL PURPOSE RECTIFIER APPLICATIONS z Average Forward Current Unit: mm : IF AV = 1A z Repetitive Peak Reverse Voltage : VRRM = 100, 400, 600, 1000V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

S5566B

Abstract: S5566G S5566J S5566N
Contextual Info: S5566B,S5566G,S5566J,S5566N TOSHIBA RECTIFIER SILICON DIFFUSED TYPE S5566B,S5566G,S5566J,S5566N GENERAL PURPOSE RECTIFIER APPLICATIONS Unit: mm z Average Forward Current : IF AV = 1A z Repetitive Peak Reverse Voltage : VRRM = 100, 400, 600, 1000V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: T O SH IB A S5566B,S5566G,S5566J,S5566N TOSHIBA RECTIFIER SILICON DIFFUSED TYPE S5566B, S5566G, S5566J, S5566N GENERAL PURPOSE RECTIFIER APPLICATIONS. • • U nit in mm nj O Average Forward Current : Ip AV = 1A Repetitive Peak Reverse Voltage : V r r m =100~1000V

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

Siemens Ni1000 temperature sensor

Abstract: n531 QAC22 N9292 LG-Ni1000 QFM3100 triac BT 317 DATASHEET
Contextual Info: System Catalog 2014 The information in this document contains general descriptions of technical options available, which do not always have to be present in individual cases. The required features should therefore be specified in each individual case at the time of closing the contract.