1000V Search Results

transistor 2SK1603

Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
Contextual Info: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all

smd 1gw

Abstract: diode Z47 1ZB36 1ZB20 zener U1DL49 1ZB20 6B4B41 FAST RECOVERY DIODE 200ns 2a 1B4B41 J2C42
Contextual Info: a SELECTOR GUIDE The following products are recommended for use in any new circuitry designs. General Purpose Rectifiers —> Peak Repetitive Reverse Voltage 600V 1000V 1S 1887 1S 1888 1S 1830 S5277B S5277G S5277J S5277N D O -41S S5566B S5566G S5566J S5566N

Contextual Info: 2NH45 SILICON DIFFUSED TYPE FAST RECOVERY RECTIFIER SWITCHING TYPE POWER SUPPLY APPLICATIONS. Unit in mm . Repetitive Peak Reverse Voltage : VRRf.j=1000V . Average Forward Current : If AV =2.0A . Very Fast Reverse-Recovery Time : trr=200ns(Max.) MAXIMUM RATINGS

Contextual Info: AG303-63 InGaP HBT Gain Block Product Description Product Features • • • • • • • • DC – 6000 MHz 20.5 dB Gain @ 900 MHz +14 dBm P1dB @ 900 MHz +26 dBm OIP3 @ 900 MHz Single Voltage Supply Internally matched to 50 Ω Robust 1000V ESD, Class 1C

Contextual Info: 1R5NH41 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1R5NH41 SWITCHING MODE POWER SUPPLY APPLICATIONS • Repetitive Peak Reverse Voltage: VRRM = 1000V • Average Forward Current: IF AV = 1.5A • Very Fast Reverse Recovery Time: trr = 400ns (Max)

MMIC marking CODE c4

Contextual Info: ECG055C InGaP HBT Gain Block Product Features • 20 dB Gain @ 1 GHz • +18 dBm P1dB @ 1 GHz GND 4 RF In RF Out 3 1 • +34 dBm OIP3@ 1 GHz • Single Voltage Supply • 3.4 dB Noise Figure • Internally matched to 50 Ω • Robust 1000V ESD, Class 1C • Lead-free/green/RoHS-compliant

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

KBU2510

Abstract: KBU25005 KBU2504
Contextual Info: KBU25005 thru KBU2510 REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 25.0 Amperes SILICON BRIDGE RECTIFIERS KBU FEATURES ●Surge overload rating -400 amperes peak .157 4.0 *45° ●Ideal for printed circuit board .935(23.7) .895(22.7) ●Reliable low cost construction utilizing

TKA30B-B

Abstract: TKA30A-B TKA30A-C TKA30C-B TKA30C-C
Contextual Info: TKA30 25W DC-DC Triple Output Converter series Features : 2:1 wide input range 4:1 wide input range option 1000VDC I/O isolation Built-in EMI filter Remote ON-OFF control Protections: Short circuit / Overload Cooling by free air convection Six-sided shield metal case

MP1008

Abstract: IR326 IR 326 MP10 mp1008 ic MP1006 MP1010 MP10005 MP1001 MP1002
Contextual Info: MP10005 thru MP1010 REVERSE VOLTAGE FORWARD CURRENT SILICON BRIDGE RECTIFIERS - 50 to 1000Volts 10.0 Amperes MP8 FEATURES METAL HEAT SINK ● Surge overload rating -240 amperes peak .307 7.8 .267(6.8) ● Low forward voltage drop ● Small size; simple installation

47uf/100v

Abstract: capacitor 1000uf 12v
Contextual Info: NSD05-S 5W DC-DC Regulated Single Output series Features : Wide 4:1 DC input range Protections: Short circuit / Overload / Over voltage 1000VDC I/O isolation Cooling by free air convection Built-in remote ON-OFF control 100% full load burn-in test Low cost

kbu 1506

Abstract: kbu 1504 kbu 1510 KBU1510 kbu 1508 kbu 1502 KBU15005 kbu1508 kbu1506 kbu1502
Contextual Info: KBU15005 thru KBU1510 REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 15.0 Amperes SILICON BRIDGE RECTIFIERS KBU FEATURES ●Surge overload rating -300 amperes peak .157 4.0 *45° ●Ideal for printed circuit board .935(23.7) .895(22.7) ●Reliable low cost construction utilizing

Contextual Info: KBP2005G thru KBP210G REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 2.0 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS KBP FEATURES ●Surge overload rating -60 amperes peak .118X45° 3.0 ●Ideal for printed circuit board .600(15.24) .560(14.22) .500(12.70)

Contextual Info: 1 2 3 4 5 6 7 8 9 A A SPECIFICATIONS Voltage Rating: Current Rating: Contact Resistance: Insulation Resistance: Withstanding: Pin Header: Housing: Temperature Range: Max Soldering: B 300V 8A 20mΩ 5000MΩ/1000V AC2000V/1min Brass, Tin Plated PA66, UL94V-0

Contextual Info: APTM100UM65SCAVG Single switch Series & SiC parallel diodes MOSFET Power Module D DK VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies

Contextual Info: LOW PROFILE D-SUB. CONNECTOR I.D.C. TYPE WITH METAL SHELL & THROUGH HOLES SPECIFICATIONS Current Rating: 3.0 Ampere Contact Resistance: 25mΩ Max. Insulation Resistance: 1000MΩ Min. at 500V Dielectric Voltage: 1000V at 1 Minute Operating Temperature: -55ºc to +105ºc

digital multimeter

Abstract: IEC-1010-1 multimeter IEC1010-1 PRO-50A Global Specialties transistor 1000V IEC-1010 ac diode 1000V 6F22 9V
Contextual Info: Test Equipment Digital Multimeter Model PRO-50A Hand-Held Digital Multimeter The Global Specialties Model PRO-50A is a highly versatile, economicallypriced, hand-held digital multimeter. Designed to meet CAT III 1000V and CAT IV (600V) safety standards,

Contextual Info: Fuse Block 441-4454 Date Last Revised: 10-20-05 .91 .61 .28 .43 .12 1.30 .94 .63 .12 .16 .31 ø.13 ø.24 ø.06 .31 Dimensions: In. SPECIFICATIONS Rated power: 125V 6A Withstand voltage: 1000VAC for 1 minute Insulation resistance: 100MΩ min. @ 500VDC Mold stopper:

110-BP

Abstract: 110-P 110-SP 110-PBM-OFF 110-PBM-ON
Contextual Info: 641/110P-Series Pushbutton Switches Dielectric Strength UL/CSA: 1000V - live to dead metal & opposite polarity Electrical Life 100,000 cycles Mechanical Life 25,000 cycles Operating Temperature 32°F to 185°F 0°C to +85°C 641/110P-Series Pushbutton Switches

Contextual Info: LITE-ON SEMICONDUCTOR DF04MH thru DF10MH REVERSE VOLTAGE - 400 to 1000 Volts FORWARD CURRENT - 1.0 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES DF-M Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop, high current capability.

GBU1506

Abstract: GBU1508 gbu 1506 gbu 1506 rectifier GBU 1508 GBU1510 GBU1504
Contextual Info: LITE-ON SEMICONDUCTOR GBU1504 thru GBU1510 REVERSE VOLTAGE - 400to 1000 Volts FORWARD CURRENT - 15 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS GBU FEATURES Rating to 1000V PRV Ideal for printed circuit board Reliable low cost construction utilizing molded plastic

GBJ8005

Abstract: GBJ801 GBJ802 GBJ804 GBJ806 GBJ808 GBJ810
Contextual Info: LITE-ON SEMICONDUCTOR GBJ8005 thru GBJ810 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 8.0 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS GBJ FEATURES Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop, high current capability.

W005G

Abstract: W01G W02G W04G W06G W08G W10G
Contextual Info: LITE-ON SEMICONDUCTOR W005G thru W10G GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes WOG FEATURES Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop, high current capability. Reliable low cost construction utilizing molded epoxy

APT0406

Abstract: APT0502 APTM100DA33T1G
Contextual Info: APTM100DA33T1G VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 23A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC Features • 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction