S8303 Search Results

S8302

Abstract: S8303 NPDS8301 NPDS8302 NPDS8303
Contextual Info: S e m i c o n d u c t o r " & NPDS8301 NPDS8302 S8303 D2 s2 S O -8 * * S1 D1 N-Channel General Purpose Dual Amplifier Sourced from P rocess 83. Absolute Maximum Ratings* Symbol T A = 25 ° C u n le ss oth e rw ise noted Parameter Value Units V dg Drain-Gate Voltage

Si4800BDY-T1-E3

Abstract: Si4800BDY Si4800BDY-T1-GE3
Contextual Info: Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.0185 at VGS = 10 V 9 0.030 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

SiHF820AL

Abstract: IRF820A IRF820AL IRF820AS SiHF820A SiHF820AL-E3
Contextual Info: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) 8.5 Configuration

IRF840LCPBF

Abstract: IRF840LC SiHF840LC SiHF840LC-E3
Contextual Info: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating

D-PAK package

Abstract: si7980
Contextual Info: Si7980DP Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 20 Channel-2 20 RDS(on) (Ω) 0.022 at VGS = 10 V 0.025 at VGS = 4.5 V 0.015 at VGS = 10 V 0.019 at VGS = 4.5 V ID (A)a, f 8.0 8.0 8.0 8.0

a3180

Abstract: TPCS8303 TPCS83
Contextual Info: S8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ S8303 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)

Contextual Info: Si7374DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0055 at VGS = 10 V 24 0.0066 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 36 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: Si7980DP Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 20 Channel-2 20 RDS(on) (Ω) 0.022 at VGS = 10 V 0.025 at VGS = 4.5 V 0.015 at VGS = 10 V 0.019 at VGS = 4.5 V ID (A)a, f 8.0 8.0 8.0 8.0

3B marking

Contextual Info: S8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ S8303 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Machines and Tools • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)

Contextual Info: S8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ S8303 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Machines and Tools • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)

Contextual Info: Si4812BDY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.016 at VGS = 10 V 9.5 0.021 at VGS = 4.5 V 7.7 • Halogen-free According to IEC 61249-2-21 Available • LITTLE FOOT Plus Power MOSFET

Contextual Info: New Product Si5440DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.019 at VGS = 10 V 6 0.024 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Qg (Typ.) • TrenchFET Power MOSFET 9 nC

Contextual Info: Si7980DP Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 20 Channel-2 20 RDS(on) (Ω) 0.022 at VGS = 10 V 0.025 at VGS = 4.5 V 0.015 at VGS = 10 V 0.019 at VGS = 4.5 V ID (A)a, f 8.0 8.0 8.0 8.0

Si4812BDY

Contextual Info: Si4812BDY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.016 at VGS = 10 V 9.5 0.021 at VGS = 4.5 V 7.7 • Halogen-free According to IEC 61249-2-21 Available • LITTLE FOOT Plus Power MOSFET

TPCS8303

Contextual Info: S8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ S8303 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Machines and Tools • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)

Contextual Info: Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.0185 at VGS = 10 V 9 0.030 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: Si7374DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0055 at VGS = 10 V 24 0.0066 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 36 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: New Product Si5440DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.019 at VGS = 10 V 6 0.024 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Qg (Typ.) • TrenchFET Power MOSFET 9 nC

Contextual Info: Si4812BDY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.016 at VGS = 10 V 9.5 0.021 at VGS = 4.5 V 7.7 • Halogen-free According to IEC 61249-2-21 Available • LITTLE FOOT Plus Power MOSFET

IRF820S

Contextual Info: IRF820S, SIHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D DESCRIPTION D2PAK (TO-263) Third generation Power MOSFETs from Vishay provide the

TPCS8303

Contextual Info: S8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ S8303 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)

TPCS8303

Contextual Info: S8303 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSⅣ S8303 ○ リチウムイオン 2 次電池用 ○ ノートブック PC 用 ○ 携帯電子機器用 • 単位: mm 小型薄型で実装面積が小さい。

Contextual Info: New Product Si5440DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.019 at VGS = 10 V 6 0.024 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Qg (Typ.) • TrenchFET Power MOSFET 9 nC

Contextual Info: New Product Si5440DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.019 at VGS = 10 V 6 0.024 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Qg (Typ.) • TrenchFET Power MOSFET 9 nC