SI5440DC Search Results

Contextual Info: SPICE Device Model Si5440DC www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product Si5440DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.019 at VGS = 10 V 6 0.024 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Qg (Typ.) • TrenchFET Power MOSFET 9 nC

Contextual Info: New Product Si5440DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.019 at VGS = 10 V 6 0.024 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Qg (Typ.) • TrenchFET Power MOSFET 9 nC

Contextual Info: New Product Si5440DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.019 at VGS = 10 V 6 0.024 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Qg (Typ.) • TrenchFET Power MOSFET 9 nC

Contextual Info: New Product Si5440DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.019 at VGS = 10 V 6 0.024 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Qg (Typ.) • TrenchFET Power MOSFET 9 nC

A1719

Contextual Info: SPICE Device Model Si5440DC Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Si5440DC-T1-GE3

Abstract: si5440
Contextual Info: New Product Si5440DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.019 at VGS = 10 V 6 0.024 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Qg (Typ.) • TrenchFET Power MOSFET 9 nC

datasheet of 8870

Abstract: MOSFET 704 AN609
Contextual Info: Si5440DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs