S8302 Search Results

schott 8270

Abstract: 10-STAGE TP136 AJ2283 S830
Contextual Info: Return To Product Page S83025F, S83025FM1, S83025FM2 Photomultipliers 76-mm 3-inch Hexagonal 10-Stage,Head-On PMTs BURLE S83025F, -M1, and -M2 are three-inch hexagonal, 10-stage photomultiplier tubes. Each employs a potassium-cesium-antimonide (bialkali)

AJ2283

Abstract: scintillator 10-STAGE TP136 S83021E B270 bialkali refraction S830 S83021EM2 S83021EM1
Contextual Info: Return To Product Page S83021E, S83021EM1, S83021EM2 Photomultipliers 76-mm 3-inch Diameter 10-Stage, Head-On PMTs BURLE S83021E, -Ml, and -M2 are three-inch round, 10-stage photomultiplier tubes. Each employs a potassium-cesium-antimonide (bialkali) photocathode

dual photodiode

Abstract: Sensors PSD S8302 spot light size photodiode uA 741 T psd photodiode autofocus sensor transistor 1BW KPSD1018E02 SE-171
Contextual Info: PHOTODIODE/PSD Photodiode/PSD sensor S8302 Dual photodiode or PSD switchable sensor S8302 is a unique light sensor whose active area can be switched to dual-photodiode or PSD by an external signal. Features l One-dimensional sensor with active area switchable

dual photodiode

Abstract: S8302 psd photodiode
Contextual Info: PHOTODIODE/PSD Photodiode/PSD sensor S8302 Dual photodiode or PSD switchable sensor S8302 is a unique light sensor whose active area can be switched to dual-photodiode or PSD by an external signal. Features Applications l One-dimensional sensor with active area switchable

S83020

Abstract: TP136 AJ2283 bialkali refraction bialkali S83020FM2 dynode TP-136 B270 nanosecond pulse generator
Contextual Info: Return To Product Page S83020F, S83020FM1, S83020FM2 Photomultipliers 60-mm Hexagonal 10-Stage, Head-On PMTs BURLE S83020F, -Ml, and-M2 are 60-millimeter hexagonal, 10-stage photomultiplier tubes. Each employs a potassium-cesium-antimonide bialkali photocathode and a “teacup” first dynode followed by

S8302

Abstract: S8303 NPDS8301 NPDS8302 NPDS8303
Contextual Info: S e m i c o n d u c t o r " & NPDS8301 S8302 NPDS8303 D2 s2 S O -8 * * S1 D1 N-Channel General Purpose Dual Amplifier Sourced from P rocess 83. Absolute Maximum Ratings* Symbol T A = 25 ° C u n le ss oth e rw ise noted Parameter Value Units V dg Drain-Gate Voltage

S8302

Abstract: TPCS8302
Contextual Info: S8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII S8302 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)

SiHF740AL

Abstract: IRF740AL IRF740AS SiHF740AL-E3 SiHF740AS SiHF740AS-E3 flyback xfmr 3.5 mh
Contextual Info: IRF740AS, IRF740AL, SiHF740AS, SiHF740AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

S8302

Abstract: 3B MARKING
Contextual Info: S8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII S8302 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)

IRF820A

Abstract: SiHF820A SiHF820A-E3
Contextual Info: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)

S8302

Abstract: TPCS8302
Contextual Info: S8302 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII S8302 ○ リチウムイオン 2 次電池用 ○ ノートブック PC 用 ○ 携帯電子機器用 • 単位: mm 小型薄型で実装面積が小さい。

S8302

Contextual Info: S8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII S8302 Lithium Ion Battery Applications Note Book PC Portable Machines and Tools Unit: mm • Has a small footprint. • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)

S8302

Abstract: TPCS8302
Contextual Info: S8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII S8302 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)

MDM 6600

Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Contextual Info: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1

SiHF740S

Abstract: S8302 IRF740S SiHF740S-E3
Contextual Info: IRF740S, SiHF740S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 400 RDS(on) (Ω) VGS = 10 V 0.55 Qg (Max.) (nC) 63 Qgs (nC) 9.0 Qgd (nC) 32 Configuration Single D D2PAK (TO-263) • • • • • • • • Surface Mount Available in Tape and Reel

IRF740LC

Abstract: SiHF740LC SiHF740LC-E3
Contextual Info: IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.55 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single TO-220 RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve

Contextual Info: S8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII S8302 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)

Contextual Info: S8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII S8302 Lithium Ion Battery Applications Note Book PC Portable Machines and Tools Unit: mm • Has a small footprint. • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)

IRF744

Abstract: SiHF744 SiHF744-E3
Contextual Info: IRF744, SiHF744 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 450 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 80 Qgs (nC) 12 Qgd (nC) 41 Configuration COMPLIANT • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available

S8302

Abstract: TPCS8302
Contextual Info: S8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII S8302 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)

S8303

Abstract: S8302 S8304
Contextual Info: JFETs tß Device No. Discrete POWER & Signal Technologies National Semiconductor'“ General Purpose Dual JFETs C ase Style Drift Op. K ,J Char. jiWC Vqo 6 lD (mV( ÄV», (V) (|iA| Max Max V„s G os C M R R (|imho| (dB) (V) Max Min Min Max Max Min N PD S402

S8302

Abstract: TPCS8302
Contextual Info: S8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII S8302 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)