Z7 TRANSISTOR Search Results

Contextual Info: General purpose transistor dual transistors EMZ7 / UMZ7N Dimensions (Unit : mm) Abbreviated symbol : Z7 2.0 1.3 0.9 0.7 0.1Min. ROHM : EMT6 0.65 (1) 2.1 0to0.1 Each lead has same dimensions Structure NPN / PNP epitaxial planar silicon transistor (2)

Contextual Info: General purpose transistor dual transistors EMZ7 / UMZ7N Dimensions (Unit : mm) Abbreviated symbol : Z7 0to0.1 2.0 1.3 0.9 0.7 0.15 2.1 0.1Min. ROHM : EMT6 0.65 (2) 1.25 Each lead has same dimensions Structure NPN / PNP epitaxial planar silicon transistor

2SA2018

Abstract: 2SC5585 2SA20
Contextual Info: EMZ7 / UMZ7N Transistors General purpose transistor dual transistors EMZ7 / UMZ7N ! External dimensions (Units : mm) ROHM : EMT6 Abbreviated symbol : Z7 EMZ7 / UMZ7N (3) (2) (1) Tr1 Tr2 (4) (5) (6) ! Absolute maximum ratings (Ta = 25°C) Parameter Symbol

Contextual Info: General purpose transistor dual transistors EMZ7 / UMZ7N Dimensions (Unit : mm) 1.25 Abbreviated symbol : Z7 0to0.1 2.0 1.3 0.9 0.7 0.15 2.1 0.1Min. ROHM : EMT6 0.65 (1) (6) (1) Each lead has same dimensions Structure NPN / PNP epitaxial planar silicon transistor

RCA-2N2102

Abstract: 2n2102 2N1613 2n2102 replacement rca 2n2102 si2666 2n1613 replacement transistors BC 457
Contextual Info: SOLID STATE Dl DE I 3fl7SDÖl H igh Speed Pow er Transistors- 2N1613, 2N2102 Medium-Power Silicon N-P-N Planar Transistors \ y ^ Z7~f? = - 0017007 T File Number 106 TER M IN AL DESIGNATIONS For Small-Signal Applications

Contextual Info: BF994S PHILIPS INTERNATIONAL SbE D 711002b 003407b T1S IPHIN FOR D ETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR D ATASHEET T-?«r-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and

PN222A

Abstract: 2N2222A TO-92 BSR14 2N3904 TO-92 type PN544 TN2219 2NS904 MPS6574 NPN transistor 2N2222A in T0-92 package Transistor 2N2222A
Contextual Info: NATL SEMICOND DISCRETE SEE D • bSQ113Q 0D37773 S ■ T-Z7-0! NPN General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Min V Cbo(V) Min Min Max Ic/V c (mA/V) Ft (MHz) Min PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 30 30 30 30 30 30 30

2SA1237

Abstract: 9571 transistor Pc 9571
Contextual Info: SANYO SEMICONDUCTOR CORP 35E D 7^707^ u.,jm OOCHläH 7 fâk • Tr2.9~Z7 P N P Epitaxial Planar Silicon C om p osite Transistor 2029A Differential Amp Applications S57C Applications . Differential amp, current mirror, temperature compensator. Features . Excellent in thermal equilibrium and suited for use in differential amp

175C

Abstract: IT130 IT130A IT131 IT132 XIT130 XIT131 TO-71 transistor 5V110
Contextual Info: IT130 —IT132 CALOGIC CORP üAE ]> • 1ÔMM3S5 ÜGGG3b3 4 m C G C _ calori« Monolithic Dual PNP General Purpose Amplifier CORPORATION V 'TJZm 7-Z7 IT130-IT132 A B S O L U T E MAXIMUM RATING S Ta = 25°C unless otherwise specified

MPS6519

Abstract: MPS6517 MPS6518 MPS6513 MPS6515
Contextual Info: MPS6517 MPS6518 MPS6519 SbE PHILIPS INTERNATIONAL TllOÔEb J> DDMSSDO Ö01 PHIN T-Z7-2J AMPLIFIER TRANSISTOR General purpose p-n-p transistors in T O -92 envelopes. The complementary types are M PS6513 to MPS6515. Q U IC K R E F E R E N C E D A T A M PS6517

BDT63

Abstract: transistor 1BT BDT63B M32T BDT63C transistor 1BT 12 bdt63a Complementary Darlington Audio Power Amplifier BDT62 BDT62A
Contextual Info: J PHILIPS INTERNATIONAL SbE D BDT63; 63A BDT63B; 63C 711Dfl2fc. 004355^ TT T • ■ PH IN T-JJ-Z7 SILICON DARLINGTON POWER TRANSISTORS N -P-N ep itaxial base transistors in m o n o lith ic D arling to n c irc u it fo r audio o u tp u t stages and general

T2721

Abstract: BFX87 BFX88 1N916 199Q silicon planar epitaxial transistors 2721
Contextual Info: BFX87 BFX88 ?'.JILIPS I N T E R N A T I O N A L 5bE D • TllDÖEti DGMEESÖ "]Ö5 ■ P H I N 7-Z7-21 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in TO-39 metal envelopes for general industrial applications. QUICK R EFER EN C E DATA ' Collector-base voltage open emitter

2SD1638

Abstract: u79 transistor u79 dc motor drive
Contextual Info: h Z7 > y 2SD1638 /Transistors 2SD1638 i t : ^ ^ y 7 ^ 7 0L / - ^ N P N Epitaxial Planar NPN Silicon Transistor Darlington i - $ - K 7 -i • 'J I* — K 7 -i 7 /Motor, Relay Drive • • 1) Dimensions (U n it: mm) ? —') > b 2) i O 3) /s - X • I S 2.5±0.2

2SA1633

Abstract: 2SC4278
Contextual Info: h Z7> y 7 .2 /Transistors 2SA1633 2SA1633 I t f ^ = r '> 7 ^ 7 ° U - t ^ P N P h ÿ > y * $ Epitaxial Planar PNP Silicon Transistor Freq. Power Amp. • 1 5 rliilS l/D im en sio ns Unit : mm) ,Q T cfc •£> o I6 0 ^3.3 ± 0 .1 BV cEO = — 150V 5.0 * § 'f

transistor Z2

Abstract: z3 transistor transistor z3 Z7 transistor 8 bit barrel shifter transistor z5
Contextual Info: CFCIOOIA CFCIOOIA CFCIOOIA 8-bit Barrel Shifter DESCRIPTION: CFCIOOIA performs an 8-bit end-around shift, which is known as a barrel shift. There are three control lines SI, S2, and S4 to determine how many places to the left the 8-bit inputs (R7 through RO) will be shifted at the outputs (Z7

2222KM

Abstract: vn2222l 3FS10
Contextual Info: SILICONIX IflE D INC • 1 7 Sinilic o r. n ix c o r p o r a te d J êM S2S473S 0014100 3 ■ VN2222KM, VN2222L il N-Channel Enhancem ent-M ode M O S Transistors T-Z7-23 PRODUCT SUMMARY TO-92 PART NUMBER B O T T O M VIEW V BR DSS rDS(ON) (V) (n) (A) PACKAGE

BF994S marking code

Abstract: BF994S MOSFET Tetrode
Contextual Info: J PHILIPS INTERNATIONAL SbE D BF994S 711002t. 0 0 3 4 0 7 b T1S • PHIN FOR D E T A IL E D IN FO R M A TIO N SEE THE LATEST ISSUE OF HANDBO OK SC07 OR D ATASHEET T -? jr-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in aplasticSOT143 m icrom iniature envelope w ith source and

Contextual Info: HARRIS S E M I C O N D S E C T O R 27E D B 4 3 0 2 2 7 1 0 D l S 7 n? ? IHAS V-Z7-ZST -3 /-Z 5 Differential Amplifier Transistors — Monolithic Duals Junction FETs — N-Channel Vqsi-2 AVg s Vp V *G pA Max SVqss V Min Min Max Min Max Min Max -50 -50 -50 -50

2SD1661

Abstract: A1314 transistor AGEV 1A
Contextual Info: h Z7> is 7 .2 /Transistors 2SD1661M /2SD 1866 y ' j 3 > 2 S D 1 6 6 2 S D 1 8 6 1 b 7 > y z $ M Epitaxial Planar NPN Silicon Transistor Darlington i 2 — K 7 'i ' • U U — K 7 -f ^ /Motor, Relay Drive. 6 • fl-ffivliâE I/D im ensio n s (Unit: mm) • « ft

2SB1212

Abstract: 2SD1812 transistor 2Sb1212
Contextual Info: 2SB1212 / T ransistors h Z7 > y 2SB1212 X t f ^ d r V 7 ^ 7 ° U - ^ P N P '> U = I> Power Amp. Epitaxial Planar PNP Silicon Transistor • W f ^ jiH /D im e n s io n s Unit : mm 1) ¡ S f if f i? < 6 > 3 (B V c e o = - 1 6 0 V ) o 2 )A S O tf£ < , 3) C o b *^ J ^ t'o

2N869A

Abstract: 2N869A JAN 2N4453 2N869A JANTX TO206AA 313 Motorola
Contextual Info: MO T O R O L A SC X S TR S/ R F 12E D | b3b72S4 Q O Ö b a S 1» T-Z7-IS 2N869A M A X IM U M R A T IN G S R ating C o llector-E m itter Voltage Sym bol 2N869A 2N4453 U n it VcEO 18 18 Vdc Vdc 25 C o llector-E m itter Voltage VcES Collector-Base Voltage V cB O

Contextual Info: HA RR IS S E M I C O N D SE CT OR 3Q H SfiE D A R R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL234 D, R, H • M 3 Q E 27 1 D O M S b T H ÖTT H H A S ZN/Z7ÖU, 2N7278H 2N7278H Radiation Hardened N-Channel Power MOSFETs December 1992

transistor z9

Abstract: transistor Z2 RT240PD cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF
Contextual Info: Preliminary 10W Power Transistor RT240PD Product Features Application • High Output Power P1dB = 40dBm Typ. @2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package

imd 5210

Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and