10IIA Search Results

MAX872CSA

Contextual Info: 19-0005; Rev 0; 6/92 10iiA, Low-Dropout, 2 .5 V Precision Voltage R eference G e n e ra l D e s c rip tio n The MAX872 precision m icropow er voltage reference consum es a m aximum of only 10|j.A and operates from su p p ly voltages up to 20V. The M AX872 sources 250nA

Contextual Info: yV I/JX I/l/l ADVANCE INFORMATION All inform ation In this data sheet Is prelim inary and subject to change. 7/92 10iiA, Low-Dropout, 4 .0 9 6 V Precision Voltage R eference Features ♦ 10nA Max Supply Current ♦ +4.3V to +20V Operating Voltage Range ♦ 40ppm/°C Max Drift

Contextual Info: Ordering number: EN 3080 F C 112 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features • On-chip bias resistors Ri = 22kft,R2 = 22k£2 • Composite type with 2 transistors contained in the CP package currently in use, improving the

2SB1118

Abstract: 2sd1618
Contextual Info: ¡ O rd e rin g n u m b e r .E N 1 7 8 4 B 2SB1118/2SD1618 N0.1784B PNP/NPN Epitaxial Planar Silicon Transistors Low-Voltage, High-Current Amp, _ Muting Applications Features . Low collector-to-emitter saturation voltage. . Very small size making it easy to provide high-density,

2SC4520

Contextual Info: Ordering number: EN 3139 2SC4520 No.3139 i SANTO NPN E pitaxial P la n ar Silicon T ransistor i High-Speed Switching Applications F e a tu r e s . Adoption ofFB ET, MBIT processes • Large cu rre n t capacity • Low collector-to-em itter saturation voltage

Contextual Info: FMMT2369 FMMT2369A t0 N CIRCUIT 270Q 3V i 3K3Í2 < Pulse width t1 =300ns Duty cycle = 2% t0 FF CIRCUIT Duty cycle = 2% STORAGE TEST CIRCUIT Duty cycle = 2% * Total shunt capacitance of test jig and connectors 3-69 Cg<4pF4 FMMT2369 | FMMT2369A SOT23 NPN SILICON PLANAR

C350AVB

Abstract: full adder using Multiplexer IC 74150 74LS382 74ls69 T2D 7N IC 74ls147 pin details 74LS396 MB652xxx 651XX 74LS86 full adder
Contextual Info: FUJITSU MICROELECTRONICS F U JIT S U wmmm 7flC D B 37MT7bH □D03c]4b 3 • JZ CMOS Gate Array GENERAL INFORMATION The Fujitsu CM O S gate array fam ily consists of tw en tyeight device types which are fabricated w ith advanced silicon gate CMOS technology. And more than 14 devices

Contextual Info: BSE D • flS3b320 G01b72? 5 H S I P Si-N Channel MOS FET Triode _ S I E M E N S / SPCLi BF 543 S E M IC O N D S T -2 \~ 2 £ ~ Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • / d s s = 4 mA, gts = 12 mS ESD:Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: a A ugust ICL76XX HARRIS - 1991 Features ICL76XX Series Low Power CMOS Operational Amplifiers A pplications • W ide O pe ratin g V oltag e Range ± 1 V to ± 8 V • P orta ble In stru m e n ts • High In p u t Im p eda nce - 1 0 l2 n • T e lepho ne H eadsets

Contextual Info: CD40160BMS, CD40161BMS CD40162BMS, CD40163BMS u A B B iQ c3J CM O S Synchronous Program m able 4-B it C ounters December 1992 Features Description • High-Voltage Type* 20V Rating CD40160BMS, CD40161BMS. CD40162BMS and CD40163BMS are 4-bit synchronous programmable

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS4250A I ME 0 J v 'ìb m M a QG07320 *1 | PNP EPITAXIAL SILICON TRANSISTOR -f Î-29-15 AMPLIFIER TRANSISTOR TO-92 • Collector-Emltter Voltage: Vc*o=60V • Collector Dissipation: Pc max =200mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

2SB124

Abstract: D1624 SB1124 2SB1124 2SD162H B112 B1124 marking b112
Contextual Info: Ordering num ber:E N 2019A 2SB1124/2SD1624 No.2019A PNP/NPN Epitaxial Planar Silicon Transistors SA\YO High-Current Switching Applications 1 Applications . Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features . Adoption of FBIT, MBIT processes.

lg crt tv

Abstract: NB212 NB211 NB222 NB112EY NB111 NB022 NB022EY
Contextual Info: bSD1130 003 SST7 'NATL SEMICOND {DISCRETE} 6501130 NATL SEMICOND, Z CL CO CM CM 28C 3 5 5 9 7 D I S CR ET E D T-ll-Z 3 E JI National m m Semiconductor as CM CM CM NB221 222 2 2 3 ÎP N P ) 500m A medium current driver transistors features CM CM CÛ z Q.

Contextual Info: a Si9115/9U£»- incorporated Off-Line Switchmode Controllers FEATURES APPLICATIONS i • 10 to 300 V input Range • Current-Mode Control • Off-Line Switchmode Power Supplies • High-Speed, Source-Sink Output Drive • Housekeeping Power Supplies • SHUTDOWN end RESET

RJ46

Abstract: 2SC3401 npn transistor da3 2SA1347
Contextual Info: Ordering num ber;E N I 2 8 9 C No. 1289C i 2SA1347/2SC3401 PNIVNPN Epitaxial P lanar Silicon T ransistors SA%YO i ' j <•' ’ ‘ Switching Applications _ with Bias Résistance ’ '•* JC SX '"V X%> Application» Switching circuit, inverter, interface circuit, driver

Contextual Info: CD4504BMS ÍH H A R R IS UU S E M I C O N D U C T O R CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation December 1992 Features • Pinout CD4504BMS TOP VIEW High Voltage Type 20V Bating • Independence of Power Supply Sequence Consider­

Gray to excess-3 code conversion

Contextual Info: ff HARRIS S E M I C O N D U C T O R December1992 CD4028BMS CM 0S BCD-To-Decimal Decoder Pinout Features CD4028BMS TOP VIEW • High Voltage Type 20V R atin g ) • BCD-to-Decim al Decoding o r Blnary-to-O ctal Decoding • High Decoded O utput D rive C ap ab ility

Contextual Info: | * FORWARD INTERNATIONAL ELECTRONICS L ID . 2N6520 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR H IG H V O L T A G E T R A N S IS T O R Package: TO-92 * Collector-Emitter Voltage VCEO=-350V * Collector Dissipation Pc MAX =625 mW ABSOLUTE M AXIM UM RA TIN G S a t Tamh=25°C

Contextual Info: SBHARRIS SEMICONDUCTOR CD40100BMS CMOS 32-Stage Static Left/Right Shift Register December 1992 Features Description • High Voltage Type 20V Rating CD40100BMS is a 32-Stage shift register containing 32 D-type master-slave flip-flops. • Fully Static Operation

134PC

Abstract: WD7625 35S-D wd76 91-D3 western digital paradise
Contextual Info: SHE D • ^710220 GQ1573b 724 « O C •n rs ^ -3 b WD7625LP Address, D ata, Hard D isk Buffers and Pow er Management Device gg WESTERN DIGITAL A WESTERN D I G I T A L 54E CORP D T71Ô EEÔ 0015737 bbO H lilD C T -52-38 Copyright 1992 Western Digital Corporation

BC560

Abstract: BC559 BC556 BC557 circuits BC557 BC550 BC558 1C558 bc550 noise figure BC54
Contextual Info: BC 556 BC 560 through PNP SILICON AF SMALL SIGNAL TRANSISTORS 1 CASE TO-92F THE BC556 THROUGH BC560 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. THEY ARE COMPLEMENTARY TO BC546 THROUGH BC550.

ELS312AR

Abstract: ELS-312AR S322RDB S322HWB 313AG S301HWB ELS-313AP 312AP 7 segment common anode 1 red 312AE
Contextual Info: 30E D EVERLICHT ELECTRONICS • 3 4 1 S 703 □□□DD 7 ci 5 ■ — MAIN FEATURES: ' G . .! -‘SI V / E R J U G H T m ■ ELS-313/312 SERIES Single Digit LED Display 0.3 inch 0 .3 IN C B H IG H CHARA C TER. ■ C H O IC E S O F R IG H T /L E F T DECIM AL PO INT.

sr 2607

Contextual Info: ANALOG DEVICES □ FE A T U R ES • Programmable Supply Current. 500nA to 400|iA • Single Supply Operation.+3V to +30V • Dual Supply Operation.±1.5V to ±15V • Low Input Offset

DSP101

Abstract: DSP202
Contextual Info: For Immediate Assistance, Contact Your Local Salesperson m jR W - B R O W ^ » DSP201 DSP202 DSP-Compatible Single/Dual DIGITAL-TO-ANALOG CONVERTERS FEATURES DESCRIPTION • ZERO-CHIP INTERFACE TO STANDARD DSP ICs: AD, AT&T, MOTOROLA, Tl • SINGLE CHANNEL: DSP201