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    2SB124 Search Results

    2SB124 Datasheets (92)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SB124
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 36.65KB 1
    2SB124
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82.2KB 1
    2SB124
    Unknown Transistor Replacements Scan PDF 70.1KB 1
    2SB124
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 109.3KB 1
    2SB124
    Unknown The Japanese Transistor Manual 1981 Scan PDF 109KB 2
    2SB124
    Unknown Discontinued Transistor Data Book 1975 Scan PDF 192.23KB 2
    2SB124
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 89.3KB 1
    2SB124
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 92.87KB 1
    2SB1240
    ROHM Medium power Transistor(- 32V, -2A) Original PDF 131.41KB 4
    2SB1240
    ROHM Medium power transistor (-32V, -2A) Original PDF 79.81KB 3
    2SB1240
    Various Russian Datasheets Transistor Original PDF 84.39KB 8
    2SB1240
    Unknown Japanese Transistor Cross References (2S) Scan PDF 36.53KB 1
    2SB1240
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 99.89KB 2
    2SB1240
    Unknown Transistor Substitution Data Book 1993 Scan PDF 37.37KB 1
    2SB1240
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 113.13KB 1
    2SB1240
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 40.87KB 1
    2SB1240
    ROHM ATR, ATV Transistors Scan PDF 200.06KB 2
    2SB1240
    ROHM ATR / ATV Transistors Scan PDF 112.69KB 2
    2SB1240P
    ROHM Medium Power Transistor (-32V -2A) Scan PDF 542.3KB 11
    2SB1240Q
    ROHM Medium Power Transistor (-32V -2A) Scan PDF 542.3KB 11
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    2SB124 Price and Stock

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    ROHM Semiconductor 2SB1184TLQ

    Bipolar Transistors - BJT D-PAK;BCE PNP;DRIVER SMT HFE RANK Q
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2SB1184TLQ Reel 2,500
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    • 10000 $0.36
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    ROHM Semiconductor 2SB1243

    Silicon PNP Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SB1243 1,500
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    ROHM Semiconductor 2SB1243TV2R

    Trans GP BJT PNP 50V 3A 1000mW 3-Pin ATV T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SB1243TV2R 1,500
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    Others 2SB1240

    TRANSISTOR,BJT,PNP,32V V(BR)CEO,2A I(C),SIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SB1240 162
    • 1 $3.54
    • 10 $3.54
    • 100 $1.77
    • 1000 $1.53
    • 10000 $1.53
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    ROHM Semiconductor 2SB1240

    IN STOCK SHIP TODAY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Component Electronics, Inc 2SB1240 26
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    2SB124 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SB1185

    Abstract: 2sB1243 2SB1184 2SD1760 hFE is transistor 2SD1762 96-128-B57 power transistor 3A 2SD1864 transistor 2SB1243
    Contextual Info: Transistors Power Transistor *60V, *3A 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FExternal dimensions (Units: mm) FStructure Epitaxial planar type


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    2sb11842sb12432sb11852sd1760+62sd18642sd176296-128-b57hfe is transistorpower transistor 3atransistor 2sb1243 PDF

    2SB1244

    Abstract: 2SB1245
    Contextual Info: HITACHI 2SB1244, 2SB1245 SILICON PNP EPITAXIAL LOW FREQUENCY HIGH VOLTAGE AMPLIFIER j | in t. Emil 1er 2, C ollector 3. Base R im e n M o n s in m in (JE D E C TO-92 MOD.) MAXIMUM COLLECTOR DISSIPATION CURVE • A BSO LU T E MAXIMUM RATINGS (Ta=25°C) Symbol


    OCR Scan
    2sb12442sb12452sbi244 PDF

    2SB1181

    Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898
    Contextual Info: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated


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    2sb12602sb11812sb1241sc-62+4sc-632sd17332sd18632sd1898 PDF

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864 2SB1184 SC-63
    Contextual Info: Power Transistor -60V, -3A 2SB1184 / 2SB1243 Dimensions (Unit : mm) 2SB1184 2SB1243 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 2.3±0.2 2.3±0.2 4.4±0.2 0.9 9.5±0.5 2.5 0.65±0.1 0.75 2.5±0.2 6.8±0.2 0.5±0.1 1.5 Structure


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    2sb11842sb124365max2sd1760+42sd1864sc-63r0039a2sb1184 sc-63 PDF

    ScansU9X27

    Contextual Info: Transistors Power Transistor - 80V, -1 A 2SB1260/2SB1181/2SB1241 •Features 1) High breakdown voltage and high current. V c e o = -80V, Ic = -1 A 2) Good fiFE linearity. 3 ) Low VcE(sai). 4) Complements the 2SD1898/ 2SD1863/2SD1733. •External dimensions (Units: mm)


    OCR Scan
    2sb1260/2sb1181/2sb12412sd1898/2sd1863/2sd17332sb1260+32sb12412sb1181scansu9x27 PDF

    Contextual Info: 2SB124060ML 2SB124060ML SCHOTTKY BARRIER DIODE CHIPS Ø 2SB124060ML is a schottky barrier diode chips Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching


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    2sb124060ml2sb124060mlyy PDF

    Contextual Info: 2SB124060ML 2SB124060ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB124060ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø


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    2sb124060ml2sb124060mlyy161dice/wafer PDF

    2SB911M

    Abstract: 2SB1240
    Contextual Info: h 7 > y Z 5 t / T ransistors 2 S B 9 1 1 M A Q n j O A fl 2SB911M/2SB1240 x , =:e5l * > ' ' 7J l ' 7 ° l ' - J - B P N P y ' j 3 > h 7 > y 7 ^ Power Amp. Epitaxial Planar PNP Silicon Transistors • • ÿHfé-sJ’JÉBI/Dimensions Unit : mm 1) Pc = 1 W


    OCR Scan
    2sb911m/2sb12402sd1227m/2sd18622sb911m2sb1240 PDF

    2SB1181

    Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898 T100
    Contextual Info: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 zExternal dimensions (Unit : mm) 2SB1260 2SB1181 (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.4+0.1 −0.05 1.5 0.9 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 9.5±0.5 0.3 5.5+


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    2sb12602sb11812sb12412sd1898+32sd18632sd1733t100 PDF

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Contextual Info: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 zExternal dimensions (Unit : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 zStructure


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    2sb11842sb124365max2sd1760+22sd1864sc-63 PDF

    2SB1243

    Abstract: 2SB1066M 2SB1066
    Contextual Info: h 7 > v X $ /Transistors 2SB1066M 2SB1243 2SB1066M/2 SB1243 - / i s — r m pnp '> « ;= ]> h 7 > v x ^ l£ f f i ^ i i lP ïffl/Medium Power Amp. Epitaxial Planar PNP Silicon Transistors tjv • ÿf-JFi^fifcH l/'D im snsions U nit : mm • *sä 1) V c E (s a t)= — 0.5V (Typ .)


    OCR Scan
    2sb1066m/2sb12432sb1066m2sb12432sd1507m/2sd1864+4-50wa-50hau-39u2sb1066 PDF

    2SB1185

    Abstract: 2SB11B4 2SB1184 2SB1243 2SD1760 transistor 2sb1185
    Contextual Info: Transistors Power Transistor -60V, -3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) •E x te rn a l dim ensions (Units: mm) LOW VcE(sei). VcE(aat) — — 0 .5 V (T y p .) (le / Ib = -2 A /-0 .2 A ) 2) Com plem ents the 2SD176 0/ 2SD1864/2SD1762. •S tru c tu re


    OCR Scan
    2sb1184/2sb1243/2sb11852sd1760/2sd1864/2sd17622sb1184+82sb1243sc-632sb1185o-220fpsc-672sb11b42sd1760transistor 2sb1185 PDF

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Contextual Info: Power Transistor -60V, -3A 2SB1184 / 2SB1243 Dimensions (Unit : mm) 2SB1184 2SB1243 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 2.3±0.2 2.3±0.2 4.4±0.2 0.9 9.5±0.5 2.5 0.65±0.1 0.75 2.5±0.2 6.8±0.2 0.5±0.1 1.5 Structure


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    2sb11842sb124365max2sd1760+32sd1864sc-63r1010a PDF

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Contextual Info: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 !Structure


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    2sb11842sb124365max2sd1760+22sd1864sc-63 PDF

    Contextual Info: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 zExternal dimensions (Unit : mm) 2SB1260 2SB1181 9.5±0.5 0.9 0.4+0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 1.5 0.9 5.5+0.3 −0.1 4.0 ±0.3 2.5+0.2 −0.1 (3)


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    2sb12602sb11812sb12412sd1898+22sd18632sd1733 PDF

    Contextual Info: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated


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    2sb12602sb11812sb12412sd1898+22sd18632sd1733 PDF

    B1185

    Abstract: b1243 TRANSISTOR transistor b1185 TRANSISTOR B1243 b1185 transistor 2SB1185 R B1185
    Contextual Info: Transistors Power Transistor -60V, -3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) VcE(sat) (Ic / I b 2) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). = —0.5V (Typ.) = -2 A /-0 .2 A ) C o m p le m e n ts th e 2 S D 1 7 6 0 / 2 S D 1 8 64 / 2 S D 1 762.


    OCR Scan
    1184/2sb1243/2sb11852sb1184/2sb1243/2sb1185+11o-126o-2200dlb713o-220fno220fpb1243 transistortransistor b1185transistor b1243b1185 transistor2sb1185r b1185 PDF

    2SD1760

    Abstract: 2SD1762 2SB1185 2SD1864 96214 2sb118 Transistor npn 2SB1184 2SB1243
    Contextual Info: Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 / 2SD1762 FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


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    2sd17602sd18642sd17622sb1184+62sb12432sb118596-214-d57962142sb118transistor npn PDF

    transistor b54

    Abstract: transistor 222 2sB1241 2SB1181 2SB1260 2SD1733 2SD1863 2SD1898 high hfe transistor
    Contextual Info: Transistors Power Transistor *80V, *1A 2SB1260 / 2SB1181 / 2SB1241 FFeatures 1) High breakdown voltage and high current. VCEO = *80V, IC = *1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. FExternal dimensions (Units: mm)


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    2sb12602sb11812sb12412sd1898+62sd18632sd173396-123-b54transistor b54transistor 222high hfe transistor PDF

    2SB1184 SC-63

    Abstract: 2SB1184 2SB1243 2SD1760 2SD1864
    Contextual Info: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 2.3 +0.2 −0.1 C0.5 2.5±0.2 6.8±0.2 0.55±0.1 2.3±0.2 2.3±0.2 (1) 1.05 (1) Base (2) Collector (3) Emitter


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    2sb11842sb12432sb1184 sc-632sd1760+12sd1864 PDF

    Contextual Info: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD1898 Features • • • • • High VCEO, VCEO=80V High IC, IC=1.0A DC Good hFE linearity Low VCE(sat) Complements the 2SB1260/2SB1241/2SB1181


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    2sd18982sb1260/2sb1241/2sb118150uadc80vdc+4500ma/20ma10vdc50madc100mhz PDF

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Contextual Info: Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1


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    2sb11842sb124365max2sd1760+12sd1864 PDF

    Contextual Info: Medium power transistor 32V, 2A 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. Dimensions (Unit : mm) 2SB1182 2SB1240 2.5±0.2 0.5±0.1 1.0 9.5±0.5 1.5 2.5 0.65±0.1


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    2sb11822sb12402sd17582sd1862+365maxsc-63r1010a PDF

    2SB1240

    Abstract: transistor 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
    Contextual Info: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 zExternal dimensions (Unit : mm) 2SB1182 (2) (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.1 0.4+ −0.05 0.4±0.1 1.5±0.1 2.3+0.2 −0.1 C0.5 0.65±0.1 0.75 9.5±0.5


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    2sb11882sb11822sb12402sd1766+42sd1758transistor 2sb12402sd1862t100 PDF