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    2SB124 Search Results

    2SB124 Datasheets (92)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SB124
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 36.65KB 1
    2SB124
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82.2KB 1
    2SB124
    Unknown Transistor Replacements Scan PDF 70.1KB 1
    2SB124
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 109.3KB 1
    2SB124
    Unknown The Japanese Transistor Manual 1981 Scan PDF 109KB 2
    2SB124
    Unknown Discontinued Transistor Data Book 1975 Scan PDF 192.23KB 2
    2SB124
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 89.3KB 1
    2SB124
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 92.87KB 1
    2SB1240
    ROHM Medium power Transistor(- 32V, -2A) Original PDF 131.41KB 4
    2SB1240
    ROHM Medium power transistor (-32V, -2A) Original PDF 79.81KB 3
    2SB1240
    Various Russian Datasheets Transistor Original PDF 84.39KB 8
    2SB1240
    Unknown Japanese Transistor Cross References (2S) Scan PDF 36.53KB 1
    2SB1240
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 99.89KB 2
    2SB1240
    Unknown Transistor Substitution Data Book 1993 Scan PDF 37.37KB 1
    2SB1240
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 113.13KB 1
    2SB1240
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 40.87KB 1
    2SB1240
    ROHM ATR, ATV Transistors Scan PDF 200.06KB 2
    2SB1240
    ROHM ATR / ATV Transistors Scan PDF 112.69KB 2
    2SB1240P
    ROHM Medium Power Transistor (-32V -2A) Scan PDF 542.3KB 11
    2SB1240Q
    ROHM Medium Power Transistor (-32V -2A) Scan PDF 542.3KB 11
    SF Impression Pixel

    2SB124 Price and Stock

    ROHM Semiconductor

    ROHM Semiconductor 2SB1241TV2R

    TRANS PNP 80V 1A ATV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1241TV2R Ammo Pack 2,500
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    ROHM Semiconductor 2SB1243TV2Q

    TRANS PNP 50V 3A ATV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1243TV2Q Ammo Pack 2,500
    • 1 -
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    ROHM Semiconductor 2SB1243TV2P

    TRANS PNP 50V 3A ATV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1243TV2P Ammo Pack 2,500
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    ROHM Semiconductor 2SB1241TV2Q

    TRANS PNP 80V 1A ATV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1241TV2Q Ammo Pack 2,500
    • 1 -
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    Buy Now

    ROHM Semiconductor 2SB1240TV2P

    TRANS PNP 32V 2A ATV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1240TV2P Ammo Pack 2,500
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    2SB124 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SB1185

    Abstract: 2sB1243 2SB1184 2SD1760 hFE is transistor 2SD1762 96-128-B57 power transistor 3A 2SD1864 transistor 2SB1243
    Contextual Info: Transistors Power Transistor *60V, *3A 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FExternal dimensions (Units: mm) FStructure Epitaxial planar type


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    2SB1184 2SB1243 2SB1185 2SD1760 2SD1864 2SD1762. 96-128-B57) 2SB1185 hFE is transistor 2SD1762 96-128-B57 power transistor 3A transistor 2SB1243 PDF

    2SB1244

    Abstract: 2SB1245
    Contextual Info: HITACHI 2SB1244, 2SB1245 SILICON PNP EPITAXIAL LOW FREQUENCY HIGH VOLTAGE AMPLIFIER j | in t. Emil 1er 2, C ollector 3. Base R im e n M o n s in m in (JE D E C TO-92 MOD.) MAXIMUM COLLECTOR DISSIPATION CURVE • A BSO LU T E MAXIMUM RATINGS (Ta=25°C) Symbol


    OCR Scan
    2SB1244, 2SB1245 2SBI244 2SB1245 2SB1244 PDF

    2SB1181

    Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898
    Contextual Info: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated


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    2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 SC-62 SC-63 2SB1241 2SD1733 2SD1863 2SD1898 PDF

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864 2SB1184 SC-63
    Contextual Info: Power Transistor -60V, -3A 2SB1184 / 2SB1243 Dimensions (Unit : mm) 2SB1184 2SB1243 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 2.3±0.2 2.3±0.2 4.4±0.2 0.9 9.5±0.5 2.5 0.65±0.1 0.75 2.5±0.2 6.8±0.2 0.5±0.1 1.5 Structure


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    2SB1184 2SB1243 2SB1184 65Max. 2SD1760 2SD1864. SC-63 R0039A 2SB1243 2SD1864 2SB1184 SC-63 PDF

    ScansU9X27

    Contextual Info: Transistors Power Transistor - 80V, -1 A 2SB1260/2SB1181/2SB1241 •Features 1) High breakdown voltage and high current. V c e o = -80V, Ic = -1 A 2) Good fiFE linearity. 3 ) Low VcE(sai). 4) Complements the 2SD1898/ 2SD1863/2SD1733. •External dimensions (Units: mm)


    OCR Scan
    2SB1260/2SB1181/2SB1241 2SD1898/ 2SD1863/2SD1733. 2SB1260 2SB1241, 2SB1181 ScansU9X27 PDF

    Contextual Info: 2SB124060ML 2SB124060ML SCHOTTKY BARRIER DIODE CHIPS Ø 2SB124060ML is a schottky barrier diode chips Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching


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    2SB124060ML 2SB124060ML 2SB124060MLYY PDF

    Contextual Info: 2SB124060ML 2SB124060ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB124060ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø


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    2SB124060ML 2SB124060ML 2SB124060MLYY 161dice/wafer PDF

    2SB911M

    Abstract: 2SB1240
    Contextual Info: h 7 > y Z 5 t / T ransistors 2 S B 9 1 1 M A Q n j O A fl 2SB911M/2SB1240 x , =:e5l * > ' ' 7J l ' 7 ° l ' - J - B P N P y ' j 3 > h 7 > y 7 ^ Power Amp. Epitaxial Planar PNP Silicon Transistors • • ÿHfé-sJ’JÉBI/Dimensions Unit : mm 1) Pc = 1 W


    OCR Scan
    2SB911M/2SB1240 2SD1227M/2SD1862£ 2SB911M 2SB1240 2SB1240 PDF

    2SB1181

    Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898 T100
    Contextual Info: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 zExternal dimensions (Unit : mm) 2SB1260 2SB1181 (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.4+0.1 −0.05 1.5 0.9 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 9.5±0.5 0.3 5.5+


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    2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 2SD1898 2SD1863 2SB1241 2SD1733 T100 PDF

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Contextual Info: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 zExternal dimensions (Unit : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 zStructure


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    2SB1184 2SB1243 65Max. 2SB1184 2SD1760 2SD1864. SC-63 2SB1243 2SD1864 PDF

    2SB1243

    Abstract: 2SB1066M 2SB1066
    Contextual Info: h 7 > v X $ /Transistors 2SB1066M 2SB1243 2SB1066M/2 SB1243 - / i s — r m pnp '> « ;= ]> h 7 > v x ^ l£ f f i ^ i i lP ïffl/Medium Power Amp. Epitaxial Planar PNP Silicon Transistors tjv • ÿf-JFi^fifcH l/'D im snsions U nit : mm • *sä 1) V c E (s a t)= — 0.5V (Typ .)


    OCR Scan
    2SB1066M/2SB1243 2SB1066M 2SB1243 2SD1507M/2SD1864Â 2SD1507M/2SD1864. 2SB1066M -50wA -50HA U-39U 2SB1243 2SB1066 PDF

    2SB1185

    Abstract: 2SB11B4 2SB1184 2SB1243 2SD1760 transistor 2sb1185
    Contextual Info: Transistors Power Transistor -60V, -3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) •E x te rn a l dim ensions (Units: mm) LOW VcE(sei). VcE(aat) — — 0 .5 V (T y p .) (le / Ib = -2 A /-0 .2 A ) 2) Com plem ents the 2SD176 0/ 2SD1864/2SD1762. •S tru c tu re


    OCR Scan
    2SB1184/2SB1243/2SB1185 2SD1760/ 2SD1864/2SD1762. 2SB1184 2SB1243 SC-63 2SB1185 O-220FP SC-67 2SB1185 2SB11B4 2SB1184 2SB1243 2SD1760 transistor 2sb1185 PDF

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Contextual Info: Power Transistor -60V, -3A 2SB1184 / 2SB1243 Dimensions (Unit : mm) 2SB1184 2SB1243 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 2.3±0.2 2.3±0.2 4.4±0.2 0.9 9.5±0.5 2.5 0.65±0.1 0.75 2.5±0.2 6.8±0.2 0.5±0.1 1.5 Structure


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    2SB1184 2SB1243 2SB1184 65Max. 2SD1760 2SD1864. SC-63 R1010A 2SB1243 2SD1864 PDF

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Contextual Info: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 !Structure


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    2SB1184 2SB1243 65Max. 2SB1184 2SD1760 2SD1864. SC-63 2SB1243 2SD1864 PDF

    Contextual Info: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 zExternal dimensions (Unit : mm) 2SB1260 2SB1181 9.5±0.5 0.9 0.4+0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 1.5 0.9 5.5+0.3 −0.1 4.0 ±0.3 2.5+0.2 −0.1 (3)


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    2SB1260 2SB1181 2SB1241 2SD1898 2SD1863 2SD1733. 2SB1260 PDF

    Contextual Info: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated


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    2SB1260 2SB1181 2SB1241 2SD1898 2SD1863 2SD1733. 2SB1260 PDF

    B1185

    Abstract: b1243 TRANSISTOR transistor b1185 TRANSISTOR B1243 b1185 transistor 2SB1185 R B1185
    Contextual Info: Transistors Power Transistor -60V, -3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) VcE(sat) (Ic / I b 2) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). = —0.5V (Typ.) = -2 A /-0 .2 A ) C o m p le m e n ts th e 2 S D 1 7 6 0 / 2 S D 1 8 64 / 2 S D 1 762.


    OCR Scan
    1184/2S B1243/2S B1185 2SB1184/2SB1243/2SB1185 O-126 O-220, 0Dlb713 O-220FN O-220FN O220FP B1185 b1243 TRANSISTOR transistor b1185 TRANSISTOR B1243 b1185 transistor 2SB1185 R B1185 PDF

    2SD1760

    Abstract: 2SD1762 2SB1185 2SD1864 96214 2sb118 Transistor npn 2SB1184 2SB1243
    Contextual Info: Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 / 2SD1762 FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


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    2SD1760 2SD1864 2SD1762 2SB1184 2SB1243 2SB1185. 96-214-D57) 2SD1762 2SB1185 96214 2sb118 Transistor npn PDF

    transistor b54

    Abstract: transistor 222 2sB1241 2SB1181 2SB1260 2SD1733 2SD1863 2SD1898 high hfe transistor
    Contextual Info: Transistors Power Transistor *80V, *1A 2SB1260 / 2SB1181 / 2SB1241 FFeatures 1) High breakdown voltage and high current. VCEO = *80V, IC = *1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. FExternal dimensions (Units: mm)


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    2SB1260 2SB1181 2SB1241 2SD1898 2SD1863 2SD1733. 96-123-B54) transistor b54 transistor 222 2sB1241 2SD1733 high hfe transistor PDF

    2SB1184 SC-63

    Abstract: 2SB1184 2SB1243 2SD1760 2SD1864
    Contextual Info: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 2.3 +0.2 −0.1 C0.5 2.5±0.2 6.8±0.2 0.55±0.1 2.3±0.2 2.3±0.2 (1) 1.05 (1) Base (2) Collector (3) Emitter


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    2SB1184 2SB1243 2SB1184 2SB1184) 2SB1243) 2SB1184 SC-63 2SB1243 2SD1760 2SD1864 PDF

    Contextual Info: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD1898 Features • • • • • High VCEO, VCEO=80V High IC, IC=1.0A DC Good hFE linearity Low VCE(sat) Complements the 2SB1260/2SB1241/2SB1181


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    2SD1898 2SB1260/2SB1241/2SB1181 50uAdc) 80Vdc) 500mA/20mA) 10Vdc, 50mAdc, 100MHz) PDF

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Contextual Info: Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1


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    2SB1184 2SB1243 65Max. 2SB1184 2SD1760 2SD1864. 2SB1184) 2SB1243 2SD1864 PDF

    Contextual Info: Medium power transistor 32V, 2A 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. Dimensions (Unit : mm) 2SB1182 2SB1240 2.5±0.2 0.5±0.1 1.0 9.5±0.5 1.5 2.5 0.65±0.1


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    2SB1182 2SB1240 2SD1758 2SD1862. 2SB1182 65Max. SC-63 R1010A PDF

    2SB1240

    Abstract: transistor 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
    Contextual Info: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 zExternal dimensions (Unit : mm) 2SB1182 (2) (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.1 0.4+ −0.05 0.4±0.1 1.5±0.1 2.3+0.2 −0.1 C0.5 0.65±0.1 0.75 9.5±0.5


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    2SB1188 2SB1182 2SB1240 2SB1182 2SB1188 2SD1766 2SD1758 2SB1240 transistor 2SB1240 2SD1862 T100 PDF