VDGR TEST CIRCUIT Search Results

VDGR TEST CIRCUIT Result Highlights (5)

Part	Manufacturer	Description	Download
TLC32044IN	Rochester Electronics LLC	TLC32044 - Voice-Band Analog Interface Circuits	PDF
TLC32044EFN	Rochester Electronics LLC	TLC32044 - Voice-Band Analog Interface Circuits	PDF
TLC32044IFK	Rochester Electronics LLC	TLC32044 - Voice-Band Analog Interface Circuits	PDF
54F193/BEA	Rochester Electronics LLC	54F193/BEA - Dual marked (M38510/34304BEA)	PDF
PEF24628EV1X	Rochester Electronics LLC	PEF24628 - SOCRATES Four-channel SHDSL EFM system-on-chip	PDF

VDGR TEST CIRCUIT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
diode AR S1 99 Abstract: S3 DIODE schottky 486 smps Contextual Info: Advanced Technical Information Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 HiPerFET MOSFET Diode Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V Transient	Original	100n10s1 100n10s2 100n10s3 diode ar s1 99 +2s3 diode schottky 486 smps	PDF
1N450 Abstract: IXTF1N450 Contextual Info: Advance Technical Information IXTF1N450 High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 0.9A Ω ≤ 85Ω (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 4500 V VDGR	Original	ixtf1n450 50/60hz 1n450	PDF
Contextual Info: Advance Technical Information High Voltage Power MOSFET VDSS = 2500V ID25 = 1A Ω RDS on ≤ 40Ω IXTF1N250 N-Channel Enhancement Mode (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR	Original	ixtf1n250 500ma 1n250 12-17-09-b	PDF
Contextual Info: Preliminary Technical Information IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR	Original	ixtt6n150 ixth6n150 o-268 o-247 +16n150	PDF
Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFN26N120P = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 500mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ixfn26n120p 300ns e153432 26n120p +110-24-11-c	PDF
Contextual Info: Preliminary Technical Information IXTA20N65X IXTP20N65X IXTH20N65X X-Class Power MOSFET VDSS ID25 RDS on = 650V = 20A  210m  N-Channel Enhancement Mode TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR	Original	ixta20n65x ixtp20n65x ixth20n65x o-263 +3o-220 o-247 20n65x	PDF
Z 728 Contextual Info: OBSOLETE IXFK30N110P IXFX30N110P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ixfk30n110p ixfx30n110p o-264 30n110p +24-01-08-a z 728	PDF
Contextual Info: OBSOLETE IXFN36N110P PolarTM HiPerFETTM Power MOSFET VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS	Original	50/60hz ixfn36n110p 300ns 36n110p +14-01-08-a	PDF
Contextual Info: IXFN26N120P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 500mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ixfn26n120p e153432 300ns 26n120p +110-24-11-c	PDF
26N120P Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR26N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixfr26n120p 300ns isoplus247 e153432 +226n120p 1-07-a	PDF
02N450 Abstract: IXTA02N450HV IXTT02N450HV 02n45 02n4 ixtt02n450 Contextual Info: Advance Technical Information IXTA02N450HV IXTT02N450HV High Voltage Power MOSFETs VDSS ID25 RDS on = 4500V = 200mA Ω ≤ 750Ω N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4500 V VDGR	Original	ixta02n450hv ixtt02n450hv 200ma o-263 +5o-268 02n450 02n45 02n4 ixtt02n450	PDF
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR20N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixfr20n120p 300ns isoplus247 e153432 +220n120p 1-07-a	PDF
30N120P Abstract: mosfet IXFB 30N120P IXFB30N120P nf950 Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixfb30n120p 300ns plus264tm 30n120p +31-07-a mosfet ixfb 30n120p nf950	PDF
IXFK20N120P Abstract: IXFX20N120P IXFX20N120 IXFK20N120 PLUS247 DS99854B Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 = 1200V = 20A Ω ≤ 570mΩ ≤ 300ns RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ixfk20n120p ixfx20n120p 300ns o-264 +620n120p 04-03-08-b ixfx20n120 ixfk20n120 plus247 ds99854b	PDF

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR30N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixfr30n110p 300ns isoplus247 e153432 +130n110p	PDF
IXFX30N110P Abstract: PLUS247 ixfk 30N110P Contextual Info: IXFK30N110P IXFX30N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ixfk30n110p ixfx30n110p 300ns o-264 +430n110p 4-01-08-a plus247 ixfk 30n110p	PDF
Contextual Info: High Voltage Power MOSFETs w/ Extended FBSOA VDSS ID25 IXTK20N150 IXTX20N150 = 1500V = 20A Ω < 1Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR	Original	ixtk20n150 ixtx20n150 o-264 100ms +120n150	PDF
Contextual Info: PolarTM HiPerFETTM Power MOSFETs VDSS ID25 IXFK26N120P IXFX26N120P = = 1200V 26A Ω 500mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ixfk26n120p ixfx26n120p 300ns o-264 +226n120p 10-24-11-c	PDF
20N150 Abstract: IXTK20N150 432 - 070 Contextual Info: IXTK20N150 IXTX20N150 High Voltage Power MOSFETs w/ Extended FBSOA VDSS ID25 = 1500V = 20A Ω < 1Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR	Original	ixtk20n150 ixtx20n150 o-264 plus247 +3100ms 20n150 432 - 070	PDF
IXFX26N120P Abstract: PLUS247 26N120P ixfx26n120 IXFK26N120P ixfk26n120 2030g Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFK26N120P IXFX26N120P VDSS ID25 = 1200V = 26A Ω ≤ 460mΩ ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ixfk26n120p ixfx26n120p 300ns o-264 +626n120p 3-28-08-b plus247 ixfx26n120 ixfk26n120 2030g	PDF
Contextual Info: Preliminary Technical Information IXFR16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixfr16n120p isoplus247 e153432 300ns +116n120p	PDF
Contextual Info: VDSS ID25 IXFR16N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	ixfr16n120p 300ns isoplus247 e153432 +216n120p 4-03-08-a	PDF
40n110p Abstract: IXFN40 IXFN40N110P Contextual Info: IXFN40N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS Continuous	Original	ixfn40n110p 300ns ot-227 e153432 +340n110p 3-28-08-a ixfn40	PDF
30N110P Abstract: ISOPLUS247 IXFR30N110P Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFR30N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS Continuous	Original	ixfr30n110p isoplus247 e153432 300ns +230n110p 4-01-08-a	PDF

VDGR TEST CIRCUIT Search Results

VDGR TEST CIRCUIT Result Highlights (5)

VDGR TEST CIRCUIT Datasheets Context Search

diode AR S1 99

1N450

Z 728

26N120P

02N450

30N120P

IXFK20N120P

IXFX30N110P

20N150

IXFX26N120P

40n110p

30N110P