VDGR TEST CIRCUIT Search Results

VDGR TEST CIRCUIT Result Highlights (5)

Part	Manufacturer	Description	Download
SCC433T-K03-004	Murata Manufacturing Co Ltd	2-Axis Gyro, 3-axis Accelerometer combination sensor	PDF
MRMS791B	Murata Manufacturing Co Ltd	Magnetic Sensor	PDF
SCC433T-K03-05	Murata Manufacturing Co Ltd	2-Axis Gyro, 3-axis Accelerometer combination sensor	PDF
SCC433T-K03-PCB	Murata Manufacturing Co Ltd	2-Axis Gyro, 3-axis Accelerometer combination sensor on Evaluation Board	PDF
D1U54T-M-2500-12-HB4C	Murata Manufacturing Co Ltd	2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR	PDF

VDGR TEST CIRCUIT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
diode AR S1 99 Abstract: S3 DIODE schottky 486 smps Contextual Info: Advanced Technical Information Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 HiPerFET MOSFET Diode Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V Transient	Original	100N10S1 100N10S2 100N10S3 diode AR S1 99 S3 DIODE schottky 486 smps	PDF
1N450 Abstract: IXTF1N450 Contextual Info: Advance Technical Information IXTF1N450 High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 0.9A Ω ≤ 85Ω (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 4500 V VDGR	Original	IXTF1N450 50/60Hz, 1N450 IXTF1N450	PDF
Contextual Info: Advance Technical Information High Voltage Power MOSFET VDSS = 2500V ID25 = 1A Ω RDS on ≤ 40Ω IXTF1N250 N-Channel Enhancement Mode (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR	Original	IXTF1N250 500mA 1N250 12-17-09-B	PDF
Contextual Info: Preliminary Technical Information IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR	Original	IXTT6N150 IXTH6N150 O-268 O-247 6N150	PDF
Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFN26N120P = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 500mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	IXFN26N120P 300ns E153432 26N120P 10-24-11-C	PDF
Contextual Info: Preliminary Technical Information IXTA20N65X IXTP20N65X IXTH20N65X X-Class Power MOSFET VDSS ID25 RDS on = 650V = 20A  210m  N-Channel Enhancement Mode TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR	Original	IXTA20N65X IXTP20N65X IXTH20N65X O-263 O-220 O-247 20N65X	PDF
Z 728 Contextual Info: OBSOLETE IXFK30N110P IXFX30N110P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	IXFK30N110P IXFX30N110P O-264 30N110P 4-01-08-A Z 728	PDF
Contextual Info: OBSOLETE IXFN36N110P PolarTM HiPerFETTM Power MOSFET VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS	Original	50/60Hz, IXFN36N110P 300ns 36N110P 4-01-08-A	PDF
Contextual Info: IXFN26N120P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 500mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	IXFN26N120P E153432 300ns 26N120P 10-24-11-C	PDF
26N120P Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR26N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFR26N120P 300ns ISOPLUS247 E153432 26N120P 1-07-A	PDF
02N450 Abstract: IXTA02N450HV IXTT02N450HV 02n45 02n4 ixtt02n450 Contextual Info: Advance Technical Information IXTA02N450HV IXTT02N450HV High Voltage Power MOSFETs VDSS ID25 RDS on = 4500V = 200mA Ω ≤ 750Ω N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4500 V VDGR	Original	IXTA02N450HV IXTT02N450HV 200mA O-263 O-263) O-263 O-268 O-268 02N450 IXTT02N450HV 02n45 02n4 ixtt02n450	PDF
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR20N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFR20N120P 300ns ISOPLUS247 E153432 20N120P 1-07-A	PDF
30N120P Abstract: mosfet IXFB 30N120P IXFB30N120P nf950 Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFB30N120P 300ns PLUS264TM 30N120P 1-07-A mosfet IXFB 30N120P IXFB30N120P nf950	PDF
IXFK20N120P Abstract: IXFX20N120P IXFX20N120 IXFK20N120 PLUS247 DS99854B Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 = 1200V = 20A Ω ≤ 570mΩ ≤ 300ns RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	IXFK20N120P IXFX20N120P 300ns O-264 20N120P 04-03-08-B IXFK20N120P IXFX20N120P IXFX20N120 IXFK20N120 PLUS247 DS99854B	PDF

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR30N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFR30N110P 300ns ISOPLUS247 E153432 30N110P	PDF
IXFX30N110P Abstract: PLUS247 ixfk 30N110P Contextual Info: IXFK30N110P IXFX30N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	IXFK30N110P IXFX30N110P 300ns O-264 30N110P 4-01-08-A IXFX30N110P PLUS247 ixfk 30N110P	PDF
Contextual Info: High Voltage Power MOSFETs w/ Extended FBSOA VDSS ID25 IXTK20N150 IXTX20N150 = 1500V = 20A Ω < 1Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR	Original	IXTK20N150 IXTX20N150 O-264 100ms 20N150	PDF
Contextual Info: PolarTM HiPerFETTM Power MOSFETs VDSS ID25 IXFK26N120P IXFX26N120P = = 1200V 26A Ω 500mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	IXFK26N120P IXFX26N120P 300ns O-264 26N120P 10-24-11-C	PDF
20N150 Abstract: IXTK20N150 432 - 070 Contextual Info: IXTK20N150 IXTX20N150 High Voltage Power MOSFETs w/ Extended FBSOA VDSS ID25 = 1500V = 20A Ω < 1Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR	Original	IXTK20N150 IXTX20N150 O-264 O-264) O-264 PLUS247 PLUS247) 100ms 100ms 20N150 432 - 070	PDF
IXFX26N120P Abstract: PLUS247 26N120P ixfx26n120 IXFK26N120P ixfk26n120 2030g Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFK26N120P IXFX26N120P VDSS ID25 = 1200V = 26A Ω ≤ 460mΩ ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	IXFK26N120P IXFX26N120P 300ns O-264 26N120P 3-28-08-B IXFX26N120P PLUS247 ixfx26n120 IXFK26N120P ixfk26n120 2030g	PDF
Contextual Info: Preliminary Technical Information IXFR16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFR16N120P ISOPLUS247 E153432 300ns 16N120P	PDF
Contextual Info: VDSS ID25 IXFR16N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	IXFR16N120P 300ns ISOPLUS247 E153432 16N120P 4-03-08-A	PDF
40n110p Abstract: IXFN40 IXFN40N110P Contextual Info: IXFN40N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS Continuous	Original	IXFN40N110P 300ns OT-227 E153432 40N110P 3-28-08-A IXFN40 IXFN40N110P	PDF
30N110P Abstract: ISOPLUS247 IXFR30N110P Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFR30N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS Continuous	Original	IXFR30N110P ISOPLUS247 E153432 300ns 30N110P 4-01-08-A ISOPLUS247 IXFR30N110P	PDF

VDGR TEST CIRCUIT Search Results

VDGR TEST CIRCUIT Result Highlights (5)

VDGR TEST CIRCUIT Datasheets Context Search

diode AR S1 99

1N450

Z 728

26N120P

02N450

30N120P

IXFK20N120P

IXFX30N110P

20N150

IXFX26N120P

40n110p

30N110P