1N450 Search Results

1N4502

Abstract: germanium diode diode germanium GERMANIUM Germanium Power Devices "Germanium Diode"
Contextual Info: Datasheet 1N4502 C Q IK K I1 Sem iconductor Corp. GERMANIUM DI ODE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC D 0 - 7 CASE Manufacturers of World C las s Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 1N4502 t y p e i s a G o l d Bonded Germanium D i o d e mounted in a

1N4500

Abstract: 1S68
Contextual Info: TInCH-PÖMBT M ï L - S - i9 5 0 0 / 4 - 0 3 {LiSAF AMENDMENT 1 20 June 1990 MILITARY SEMICONDUCTOR SPECIFICATION DEVICE, TYPE DIOQE, 1N4500, SILICON, JAN AN D SWITCHING JANTx’ T h i s a m e n d m e n t f o r m s & p a r t o f M I L - S - 1 9 5 O O / 4 0 3 U S A F ), d a t e d

Contextual Info: 1N4500+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current.30m V(RRM)(V) Rep.Pk.Rev. Voltage80 t(rr) Max.(s) Rev.Rec. Time4.0n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)1.0m V(FM) Max.(V) Forward Voltage1.0

1N4506

Abstract: 1N4510 1N4507 1N4508 1N4509 1N4511
Contextual Info: EDAL INDUSTRIES INC 45E D 3GTS71b □GÜG321 7Ô7 • EDL 7 FLATS B. PIY SEE TABLE *0 12 AMPS @ 240 AMPS 1.4 MAX. 135 V @ 12 AMPS 25 @ 135 PIV 2.5 m AMPS & STYLE °r CASE C CASE & D0"4 PIV P/N 1N4506 •200V 1N4507 400V 1N4508 600V 1N4509 800V 1N4510 1000V

JAN 1N4500

Contextual Info: COMPUTER DIODE 1N4500, JAN & JANTX 1N4500 500mA Switching Diode FEATURES DESCRIPTION • • • • T h is d evice ¡s a fast sw itching, high co n ­ d u cta n ce diode for m ilitary, space, high rel and other systems. Metallurgical Bond Qualified to MIL-S-19500/403

1N4506

Abstract: 1N4507 1N4508 1N4509 1N4510 1N4511
Contextual Info: EDAL INDUSTRIES INC 45E J> m 3GTS71b 0000321 i» 7Ô7 H E D L FLA TS B.v PIV SEE TABLE 12 AMPS 135 240 °r CASE AMPS 1.4 MAX. V @ 12 AMPS 2 . 5 m AMPS @ 25 PIV 135 C CASE @ STYLE D°"4 P/N PIV 1N4506 •200V 1N4507 400V 1N4508 600V 1N4509 800V 1N4510 1000V

1N450

Contextual Info: 1N4500 MILITARY SWITCHING DIODES 2.59 Diodes High-Speed/Fast Recovery Dio. Page 1 of 1 Enter Your Part # Home Part Number: 1N4500 Online Store 1N4500 Diodes MILITARY SWITCHING DIODES Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

1N4012

Abstract: A 260 D
Contextual Info: Standard Recovery Rectifiers Micmsemi 4 P art Num ber 1N1206A 1N1206B 1N1206B 1N4508 JAN1N1206A JANTX1N1206A JANTXV1N1206 PPR41206 R20460 S20460 UT8160 1N3670 1N3670A 1N4012 1N3671 1N3671A 1N4013 1N4509 JAN1N3671A JANTX1N3671A JANTXV1N3671 PPR4120B R20480

1N450

Abstract: DSAIH00025325
Contextual Info: F k e I NTERNATI ONAL _ 03E D | 1 1 7 ^ A3 00GDia4 Type No. 1N450 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 FEATURES Low forward voltage drop— low power consumption

JANTX1N1202A

Contextual Info: Standard Recovery Rectifiers Part Number Microscml Division Package Typo Mil Outline .1. ! Spee • 1 REC 1N3925 1N1199 1N1199A 1N1199B 1N2598 UT8105 1N1200 1N1200A 1N1200B R20410 S20410 UT8110 1N1201 1N1201A 1N1201B 1N1202 1N1202A 1N1202B 1N4506

1N91 DATASHEET

Abstract: DO-7 1N34A Diode Equivalent 1N34A 1N92 1N91 1N91 diode 1N270 1N295 1N60
Contextual Info: Germanium Diodes DO-1 and DO-7 Cases DO-1 TYPE NO. CASE 1N34A 1N60 1N67A 1N87A 1N91 1N92 1N93 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 1N3666 1N4502 CN695 CN695A DO-7 DO-7 DO-7 DO-7 DO-1 DO-1 DO-1 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7

JAN 1N4500

Abstract: 1N4500
Contextual Info: COMPUTER DIODE JAN & JANTX 1N4500 500m A Switching Diode FEATU RES D ESCR IPTIO N • • • • • This device is a fast sw itching, high con­ ductance diode for military, space, high rel and other systems. M etallurgical Bond Qualified to MIL-S-19500/403

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N4838

Abstract: IN4462 1N4475 1N4465 1N4418 1N4504 1N4474 1N4477 1N4419 1N4420
Contextual Info: Zener Voltage 3 t Izr @ mA Zener Type No. Volts 1N4418 1N4419 1N4420 39.0 43.0 47.0 1N4421 1N4422 1N4423 1N4424 1N4425 1N4426 51.0 56.0 62.0 Max. Zener Impedance @ Izt Ohms 21.0 23.0 26.0 30.0 33.0 40.0 68.0 75.0 82.0 6.5 6.0 5.5 5.0 4.5 4.0 3.7 3.3 3.0 1N4427

IN4462

Abstract: 1N4434 1N4504 1N4475 1N4465 i23l 1N4427 1N4474 1N4499 1N4504 3A diode
Contextual Info: Zener Voltage 3 t Izr @ mA Zener Type No. Volts 1N4418 1N4419 1N4420 39.0 43.0 47.0 1N4421 1N4422 1N4423 1N4424 1N4425 1N4426 51.0 56.0 62.0 Max. Zener Impedance @ Izt Ohms 21.0 23.0 26.0 30.0 33.0 40.0 68.0 75.0 82.0 6.5 6.0 5.5 5.0 4.5 4.0 3.7 3.3 3.0 1N4427

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

eel 19 2005 transformer

Abstract: eel 19 2005 transformer spellman igbt gate driver circuit schematic schematic diagram igbt inverter welding machine
Contextual Info: HIGH VOLTAGE REFERENCE MANUAL 4/2014 REV. 4 Copyright 2014 Spellman High Voltage Electronics Corp. T E C H N I C A L R E S O U R C E S M A N U A L TABLE OF CONTENTS Spellman USA and Corporate HQ 475 Wireless Blvd. Hauppauge, NY 11788 United States tel: +1-631-630-3000

1N4475

Abstract: 1N4465 1N4479 1N4466 1N4433 IN47 5C 1N4474 1N4469 1N4535 MIL-S-19500/406
Contextual Info: Zener Voltage 3t Izr @ mA Zener Type No. Volts 1N4418 1N4419 1N4420 39.0 43.0 47.0 1N4421 1N4422 1N4423 1N4424 1N4425 1N4426 51.0 56.0 62.0 Max. Zener Impedance @ Izt Ohms 21.0 23.0 26.0 30.0 33.0 40.0 68.0 75.0 82.0 6.5 6.0 5.5 5.0 4.5 4.0 3.7 3.3 3.0 1N4427

1N4742A JEDEC

Abstract: 1N4848 1N4752 1n4858 1N4742A 1N4841 1N4854 1N4838 1N4745A Zener C 211
Contextual Info: 1 WATT, M o l d e d JEDEC TYPE NUMBERt i 1N4728 1N4729 1N4730 1N4731 1N4732 1N4733 1N4734 1N4735 1N4736 1N4737 1N4738 1N4739 1N4740 1N4741 1N4742 1N4743 1N4744 1N4745 1N4746 1N4747 1N4748 1N4749 1N4750 1N4751 1N4752 1N4753 1N4754 1N4755 1N4756 1N4757 1N4758

1N295

Abstract: diodes 1N34A 1N91 diode 1N34A DO-7 1N93 1N91 1N92 1n270 1N4502
Contextual Info: Germanium Diodes* DO-1 and DO-7 Cases DO-7 DO-1 TYPE NO. CASE TECHNOLOGY VRftM io VF @ if trr V (mA) (V) (mA) (ns) MAX MAX MAX MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT GOLD BONDED POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . 1N67A DO-7 90 50 1.0 5.0

1N1342

Abstract: 1N1199 1N1202 1N1124 1N1201 1N1581 1N13468 1N1348 1N1200A 1N1200
Contextual Info: 8 3D 00 172] 8136650 S E M I C O N D U C T OR S INC A3 Silicon Power Rectifiers D E | fll3btiSD Ú/- J 7 QD0D17E fl 6 AMP - D04 Peak Reverse Voltage JEDEC Numbers 1N1341, 1N1612, 1N1342, 1N1613, 1N1341 A, 1N1341B, 1N1581, 1N2228, 1N2491 1N1342A, 1N1342B, 1N1582,

1N2222A

Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
Contextual Info: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244

n452 ak

Abstract: toho electronics inc 1N4537 1N454 germanium diode 0Q0017 N452 n314 1N277 1N278
Contextual Info: BKC IIT^ÔB 0000331 & • 'T-Ol -07 30E D I NTERNATI ONAL M <r 6 Lake Street PO Box 1436 Lawrence, M A USA 01841 BKC International Electronics Inc. L „ l Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE 1N277 Low forward voltage drop