IXFN36N110P Search Results
IXFN36N110P Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IXFN36N110P |
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FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1100V 36A SOT-227B | Original | 4 |
IXFN36N110P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
8v80Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFN36N110P VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS VGSM 1100V |
Original |
ixfn36n110p300nsot-227e153432+3 | |
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Contextual Info: OBSOLETE IXFN36N110P PolarTM HiPerFETTM Power MOSFET VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS |
Original |
50/60hzixfn36n110p300ns36n110p+1 | |
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Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFN36N110P VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ |
Original |
ixfn36n110pot-22736n110p | |
1200 volt mosfet
Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
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Original |
000-1200vixfb30n120pixfl30n120pixfn30n120p+14 |