IXTH6N150 Search Results

IXTH6N150 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTH6N150		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 6A TO-247	Original	PDF		5

IXTH6N150 Price and Stock

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Littelfuse Inc IXTH6N150 MOSFET N-CH 1500V 6A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH6N150	Tube			1	1 $13.42 10 $13.42 100 $8.14 1000 $6.76 10000 $6.76	Buy Now
Verical	IXTH6N150		1,200		30	1 - 10 - 100 $13.23 1000 $13.23 10000 $12.85	Buy Now
Arrow Electronics	IXTH6N150		1,200	50 Weeks	30	1 - 10 - 100 $13.23 1000 $13.23 10000 $12.85	Buy Now
Newark	IXTH6N150	Bulk			300	1 - 10 - 100 - 1000 $7.08 10000 $7.08	Buy Now
IXYS Corporation IXTH6N150 MOSFETs HIGH VOLT PWR MOSFET 1500V 6A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTH6N150					1 $13.53 10 $9.72 100 $9.72 1000 $9.16 10000 $9.16	Get Quote
Future Electronics	IXTH6N150	Tube			600	1 - 10 - 100 $6.98 1000 $6.85 10000 $6.85	Buy Now
TTI	IXTH6N150	Tube	120		30	1 - 10 - 100 $13.24 1000 $13.24 10000 $13.24	Buy Now
TME	IXTH6N150				1	1 $12.82 10 $10.16 100 $9.13 1000 $9.13 10000 $9.13	Get Quote
Chip Stock	IXTH6N150		4,820			1 - 10 - 100 - 1000 - 10000 -	Get Quote

New Advantage Corporation	IXTH6N150		366		1	1 - 10 - 100 $21.45 1000 $19.80 10000 $19.80	Buy Now
Vyrian	IXTH6N150		168			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IXTH6N150 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: High Voltage Power MOSFETs VDSS ID25 IXTT6N150 IXTH6N150 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTT6N150 IXTH6N150 O-268 6N150	PDF
Contextual Info: Preliminary Technical Information IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR	Original	IXTT6N150 IXTH6N150 O-268 O-247 6N150	PDF
IXTH6N150 Abstract: 6n150 Contextual Info: Advance Technical Information IXTH6N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 6A 3.5Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTH6N150 O-247 6N150 IXTH6N150 6n150	PDF
IXTT6N150 Contextual Info: IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTT6N150 IXTH6N150 O-268 O-247 6N150	PDF