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IXTH6N150 Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTH6N150		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 6A TO-247	Original	PDF		5

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Littelfuse Inc IXTH6N150 Discmosfet N-Ch Std-Hivoltage To-247Ad/ Tube \|Littelfuse IXTH6N150
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTH6N150	Bulk			30	1 - 10 - 100 $9.22 1000 $8.37 10000 $8.20	Buy Now
RS	IXTH6N150	Bulk		8 Weeks	30	1 - 10 - 100 $12.89 1000 $12.89 10000 $12.89	Get Quote
Onlinecomponents.com	IXTH6N150					1 - 10 - 100 $14.05 1000 $6.71 10000 $6.71	Buy Now
IXYS Corporation IXTH6N150 MOSFETs HIGH VOLT PWR MOSFET 1500V 6A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IXTH6N150	Tube	60		30	1 - 10 - 100 $9.35 1000 $8.90 10000 $8.90	Buy Now
Future Electronics	IXTH6N150	Tube		32 Weeks	600	1 - 10 - 100 $10.54 1000 $10.36 10000 $10.36	Buy Now
TME	IXTH6N150				1	1 $12.35 10 $9.79 100 $8.79 1000 $8.79 10000 $8.79	Get Quote

IXTH6N150 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: High Voltage Power MOSFETs VDSS ID25 IXTT6N150 IXTH6N150 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixtt6n150 ixth6n150 o-268 6n150	PDF
Contextual Info: Preliminary Technical Information IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR	Original	ixtt6n150 ixth6n150 o-268 o-247 +16n150	PDF
IXTH6N150 Abstract: 6n150 Contextual Info: Advance Technical Information IXTH6N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 6A 3.5Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixth6n150 o-247 6n150	PDF
IXTT6N150 Contextual Info: IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixtt6n150 ixth6n150 o-268 o-247 +16n150	PDF