IXFN40N110P Search Results

IXFN40N110P Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFN40N110P		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1100V 34A SOT-227B	Original	PDF		4

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IXYS Corporation IXFN40N110P MOSFET Modules 40 Amps 1100V 0.2600 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFN40N110P					1 - 10 - 100 - 1000 $80.75 10000 $80.75	Get Quote
TME	IXFN40N110P		1		1	1 $25.51 10 $25.51 100 $25.51 1000 $25.51 10000 $25.51	Buy Now
Littelfuse Inc IXFN40N110P Mosfet Module, N-Ch, 1.1Kv, 34A, 890W; \|Littelfuse IXFN40N110P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark ()	IXFN40N110P	Bulk			1	1 $118.00 10 $106.11 100 $100.49 1000 $100.49 10000 $100.49	Buy Now
	IXFN40N110P	Bulk			300	1 - 10 - 100 - 1000 $75.97 10000 $71.23	Buy Now
RS	IXFN40N110P	Bulk		8 Weeks	10	1 - 10 $115.59 100 $115.59 1000 $115.59 10000 $115.59	Get Quote
Onlinecomponents.com	IXFN40N110P					1 - 10 - 100 $180.22 1000 $61.40 10000 $61.40	Buy Now

IXFN40N110P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Technical Information IXFN40N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1100V 34A Ω 260mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions	Original	ixfn40n110p 300ns ot-227 e153432 +140n110p	PDF
40n110p Abstract: IXFN40 IXFN40N110P Contextual Info: IXFN40N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS Continuous	Original	ixfn40n110p 300ns ot-227 e153432 +340n110p 3-28-08-a ixfn40	PDF
Contextual Info: VDSS ID25 IXFN40N110P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS Continuous	Original	ixfn40n110p 300ns ot-227 e153432 +240n110p 3-28-08-a	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200v ixfb30n120p ixfl30n120p ixfn30n120p +14ixfl32n120p ixfn32n120p plus220 ixfv110n10ps 1200 volt mosfet 1000 volt mosfet mosfet 300 volt hiperfet ixfn38n100 sot 227b diode fast transistor polar 2r4n120p ixfn44n100p ixfb44n100p	PDF