TSOP 2E Search Results

TSOP 48 pin flash gbit

Abstract: JS28F00AP33BF 1FFC000
Contextual Info: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features  High performance:  TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer

pc28f00ap33

Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
Contextual Info: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: „ TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer

Contextual Info: HYM7V651601BTFG 16Mx64, 8Mx8 based, PC100 DESCRIPTION The Hynix HYM7V651601B F-Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of sixteen 8Mx8bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-il package, one 2Kbit EEPROM in 8pin TSSOP

Contextual Info: HYM7V63401BTRG 4Mx64, 4Mx16 based, PC133 DESCRIPTION The Hynix HYM7V63401B R-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package

FBGA 11x13

Abstract: k8p2716 K8P2716UZC
Contextual Info: Rev. 1.0, Jan. 2010 K8P2716UZC 128Mb C-die Page NOR Flash 56Pin TSOP 20x14mm , 64ball FBGA (11x13, 1.0mm ball pitch) Page Mode, (8M x16, 16Mb x8) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

HYM7V65401

Contextual Info: HYM7V65401B L TQG 4Mx64, 4Mx16 based, PC100 DESCRIPTION The Hynix HYM7V65401B Q-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs In 400mll 54pln TSOP-II package and 2Kbit EEPROM in 8pln TSSOP package

MSC23S2640E-8BS8

Contextual Info: MSC23S2640E-8BS8 98.08.19 Semiconductor MSC23S2640E-8BS8 2,097,152 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1BANK): DESCRIPTION The Oki MSC23S2640E-8BS8 is a fully decoded, 2,097,152 x 64bit synchronous dynamic random access memory composed of eight 16Mb DRAMs (2Mx8) in TSOP

numonyx MLC

Abstract: te28f256p33tf PC28F256P33 JS28F256P33 PC48F4400P0TB0E
Contextual Info: NumonyxTM StrataFlash Embedded Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read

strataflash p33

Abstract: PC28F PC28F256P33 JS28F256P33B
Contextual Info: NumonyxTM StrataFlash Embedded Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read

SDRAM

Abstract: 128Mx8 DDR dRAM 512M 8M X 16 SDRAM 8M X 16 X 4 SDRAM SDRAM 128M 8M x 16 512M ISSD16M16STC TSOP SDRAM ISAS512K16LTD
Contextual Info: MPD Parts Directory March 2002 Stack Technology Stack Memory Configuration Stack Part Number TSOP Memory Configuration SRAM (8M) 512K x 16 ISAS512K16LTD (4M) 256K x 16 EDO DRAM (128M) 16M x 8 ISED16M8LTB (64M) 16M x 4 SDRAM SDRAM SDRAM SDRAM SDRAM (512M)

YM71

Contextual Info: HYM71V16655AT6 16Mx64, 8Mx16 based, PC100 DESCRIPTION The Hynix HYM71V16655AT6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 8Mx16bits CMOS Synchronous DRAMs In 400mil 54pln TSOP-II package, one 2Kbit EEPROM in Spin TSSOP package on a 168pin glass-epoxy

PC28F256P33

Abstract: JS28F256P33 PC48F pc28F256P33T PC28F256P33B PC28F256p33bf PC28F256P33TF DIODE 61 BP DIODE BP truth table NOT gate 74
Contextual Info: NumonyxTM StrataFlash Embedded Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read

S29JL064H

Abstract: S29PL064J
Contextual Info: Am29DL640D Data Sheet This product has been retired and is not available for designs. For new and current designs involving TSOP packages, S29JL064H supersedes Am29DL640D and is the factoryrecommended migration path. Please refer to the S29JL064H datasheet for specifications and ordering information.

Contextual Info: 168PIN PC66 Unbuffered DIMM 32MB With 2M X8 CL3 TS4MLS64V1PN Description Placement The TS4MLS64V1PN is a 4M bit x 64 Synchronous Dynamic RAM high-density for PC-66. The TS4MLS64V1PN consists of 16pcs CMOS 2Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a

AN7254

Abstract: AN7260 ITF87052SVT MO-193AA SC-95 TB370
Contextual Info: ITF87052SVT Data Sheet 3A, 20V, 0.115 Ohm, P-Channel, 2.5V Specified Power MOSFET Packaging TSOP-6 4 3 File Number 4800.4 Features • Ultra Low On-Resistance - rDS ON = 0.115Ω, VGS = −4.5V - rDS(ON) = 0.120Ω, VGS = −4.0V - rDS(ON) = 0.190Ω, VGS = −2.5V

Contextual Info: Am29DL640G Data Sheet For new designs involving TSOP packages, S29JL064H supersedes Am29DL640G and is the factory-recommended migration path. Please refer to the S29JL064H Datasheet for specifications and ordering information. For new designs involving Fine-pitch BGA FBGA packages, S29PL064J supersedes Am29DL640G and is the

D323GB90VI

Abstract: AM29DL32XD DL324 PAL 0007 E amplificador S29JL032 DL322 DL323 S29JL032H S29PL032J spansion date code marking
Contextual Info: Am29DL32xG Data Sheet For new designs involving TSOP packages, S29JL032H supersedes Am29DL32xG and is the factory-recommended migration path. Please refer to the S29JL032H Datasheet for specifications and ordering information. For new designs involving Fine-pitch BGA FBGA packages, S29PL032J supersedes Am29DL32xG and is the

tsop62

Abstract: AN7254 AN7260 ITF87052SVT SC-95 TB370
Contextual Info: ITF87052SVT Data Sheet 3A, 20V, 0.115 Ohm, P-Channel, 2.5V Specified Power MOSFET Packaging TSOP-6 2 Features • Ultra Low On-Resistance - rDS ON = 0.115Ω, VGS = −4.5V - rDS(ON) = 0.120Ω, VGS = −4.0V - rDS(ON) = 0.190Ω, VGS = −2.5V • • •

PC28F00AP

Contextual Info: Numonyx StrataFlash Embedded Memory P33-65nm 512-Mbit, 1-Gbit Monolithic Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode

Micron Q-Flash memory

Abstract: FW501 Micron data sheet Q-Flash sample code read and write flash memory FW201 FW207 MT28F128J3 MT28F128J3FS-15 MT28F320J3 MT28F320J3FS-11
Contextual Info: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3‡ Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)

AMD marking CODE flash AM29DL323DB

Abstract: AM29DL32XD 56-Pin S29JL032 DL322 DL323 DL324 S29JL032H S29PL032J
Contextual Info: Am29DL322D/323D/324D Data Sheet This product has been retired and is not available for designs. For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL32xD and is the factory-recommended migration path. Please refer to the S29JL032H Datasheet for specifications and ordering information.

amd part marking

Abstract: S29JL064H S29PL064J
Contextual Info: Am29DL640D Data Sheet For new designs involving TSOP packages, S29JL064H supersedes Am29DL640D and is the factory-recommended migration path. Please refer to the S29JL064H datasheet for specifications and ordering information. For new designs involving Fine-pitch BGA FBGA packages, S29PL064J supersedes Am29DL640D and is the

JS28F256P30

Abstract: JS28F256P30T JS28F256P30BF PC28F256P3 RC48F4400P0VB0
Contextual Info: Numonyx AxcellTM Flash Memory P3065nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ High performance „ Security — 100 ns initial access for Easy BGA — One-Time Programmable Register: • 64 OTP bits, programmed with unique — 110 ns initial access for TSOP

FW406

Abstract: FW509 FW407 MT28F128J3FS-12 MET MT28F640J3RG-12 MT28F128J3RG-15ET flash fw206 FW206 MT28F128J3RG-15 FW510
Contextual Info: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY TM MT28F128J3‡, MT28F640J3, MT28F320J3 Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)