1FFC000 Search Results

JS28F256P33

Abstract: PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85
Contextual Info: Numonyx StrataFlash Embedded Memory P33 Datasheet Product Features „ „ „ „ High performance: — 85 ns initial access — 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst

pc28f00ap33

Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
Contextual Info: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: „ TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer

S29WS128R

Abstract: sa512 S29WS512R wireless design guide 13th S29WS WS512R
Contextual Info: S29WS-R MirrorBit Flash Family S29WS512R, S29WS256R, S29WS128R 512/256/128 Mb 32/16/8M x 16 bit Simultaneous Read/Write, Burst Mode 1.8 Volt-only Flash Memory in 65 nm MirrorBit Technology S29WS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Advance Information)

JS28F256P30

Abstract: PC28F256P30T85 js28f128p30 RC28F640P30B85 RC48F4400P0VB00 JS28F256P30B95 JS28F256P30T95 JS28F128P30T PC28F128P30B85 JS28F128P30B85
Contextual Info: Intel StrataFlash Embedded Memory P30 Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode

RC28F256P33BF

Abstract: JS28F256P33 PC28F256P33 pc28F256P33T RC28F256P33TF JS28F256P33BF PC28F256P33TF pc28f256p33b PC28F256P33BF PC48F4400P0TB0E
Contextual Info: Numonyx Flash Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,

JS28F256P30

Abstract: JS28F256P30T95 JS28F256P30B95 PC28F256P30T85 JS28F256P30T js48f4400p0vb00 RC48F4400P0VB00 JS28F128P30T85 PC28F256P30B85 PC28F640P30T85
Contextual Info: Numonyx StrataFlash P30 Embedded Memory Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode

ws512P

Abstract: D1191 SA517 S29WS-P SA516 d1271 s29ws S29WS128P S29WS256P S29WS512P
Contextual Info: S29WS-P MirrorBit Flash Family S29WS512P, S29WS256P, S29WS128P 512/256/128 Mb 32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory S29WS-P Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

js28f256p

Abstract: RC48F4400P0TB0EJ
Contextual Info: 256Mb and 512Mb 256Mb/256Mb , P33-65nm Features Micron Parallel NOR Flash Embedded Memory (P33-65nm) RC28F256P33TFE, RC28F256P33BFE, RC28F256P33BFF, PC28F256P33TFE, PC28F256P33BFE, PC28F256P33BFF, PC28F256P33BFR, RC48F4400P0TB0EJ, PC48F4400P0TB0EE, PC48F4400P0TB0EH, JS28F256P33TFE, JS28F256P33BFE

Contextual Info: 512Mb, 1Gb, 2Gb: P33-65nm Features Micron Parallel NOR Flash Embedded Memory P33-65nm JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA, JS28F00AP33TFA, JS28F00AP33EFA PC28F00AP33BFA, PC28F00AP33TFA, PC28F00AP33EFA,

MT29FxG08

Abstract: Micron MT29F8G08 MT29F2G08AABWP MT29F4G16BABWP Micron NAND MT29F2G16AABWP Micron NAND flash controller micron nand flash chip 8gb serial flash memory 8gb micron mt29f8
Contextual Info: 2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory Features NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features Figure 1: • Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words)

29F2G08

Abstract: MT29F2G16AABWP MT29FxG08 Micron MT29F8G08 MT29F4G16BABWP MX48
Contextual Info: 2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory Features NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features Figure 1: • Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words)

pc28f00ap30

Abstract: JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF
Contextual Info: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode

TSOP 48 pin flash gbit

Abstract: JS28F00AP33BF 1FFC000
Contextual Info: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features  High performance:  TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer

MICRON mcp

Abstract: PC28F256P30B P30-65nm PC28F256P PC28F256P30BFF PF48F4400P0VBQEF PC28F256P30BFE JS28F256P30BF Micron 512MB NOR FLASH PF48F
Contextual Info: 256Mb and 512Mb 256Mb/256Mb , P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features • Security – One-Time Programmable Register: 64 OTP bits,

BA339

Contextual Info: Advance Information FLASH MEMORY K8C12 13 15ET(B)M 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K1B3216B2E

Abstract: Marvell PHY 88E1111 K1B3216B2E-B170 LTI-SASF546-P26-X1 12 pin 7 segment display layout -LD-5461BS Marvell PHY 88E1111 errata Marvell PHY 88E1111 Datasheet LT4601 lcd screen LVDS connector 40 pins LDQ-M2212R1
Contextual Info: Stratix III 3SL150 Development Board Reference Manual 101 Innovation Drive San Jose, CA 95134 www.altera.com Document Version: Document Date: 1.4 November 2008 Copyright 2008 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other

MT29FxG08

Abstract: MT29F2G08AABWP MT29F2G08 Micron MT29F8G08 29f2g08 flash chip 8gb MT29F4G16BABWP MT29F2G16AABWP FLASH MEMORY 29F Micron NAND
Contextual Info: 2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory Features NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features Figure 1: • Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words)

pc28f00ap30

Abstract: JS28F512P30 PC28F00AP30TF PC28F00AP30EF PC28F512P30 JS28F512 PC28F512P30TF JS28F512P30BF pc28f00ap30bf PC28F00BP30
Contextual Info: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode

JS28F256P33

Abstract: PC28F256P33 PC28F256P33BF RC28F256P33 RC28F256P33BF JS28F256P33BF JS28F256P33TF PC48F4400P0TB0E PC28F256P33B PC28F256P33TF
Contextual Info: Numonyx AxcellTM Flash Memory P3365nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,

Contextual Info: 512Mb, 1Gb, 2Gb: P30-65nm Features Micron Parallel NOR Flash Embedded Memory P30-65nm JS28F512P30BFx, JS28F512P30EFx, JS28F512P30TFx, PC28F512P30BFx, PC28F512P30EFx, PC28F512P30TFx JS28F00AP30BFx, JS28F00AP30TFx, JS28F00AP30EFx, PC28F00AP30BFx, PC28F00AP30TFx, PC28F00AP30EFx,

strataflash 512 p30

Abstract: RC48F4400P0VB00 Migration Guide for Intel StrataFlash Memory J 3066* intel PF48F4400P0VTQ0
Contextual Info: Intel StrataFlash Embedded Memory P30 Family Datasheet Product Features High performance — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode

PC28F00AP33BF

Abstract: L 1123 1FF4000
Contextual Info: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit, 1-Gbit Monolithic Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read

Contextual Info: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read

PD70F3447

Abstract: uPD70F3187 uPD70F3447 board mk81 PD70F3347 PD70F3187 IF86 afcan V850E MK-92 mk102
Contextual Info: User’s Manual TM V850E/PH2 32-Bit Single-Chip Microcontroller Hardware PD70F3187 μPD70F3447 Document No. U16580EE3V1UD00 Date Published January 2007 NEC Electronics Corporation 2007 Printed in Germany NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN