54PLN Search Results

VTL 10D1

Abstract: ipd3n
Contextual Info: HYM72V64C736AT4 64Mx72, 64Mx4 based, PC 133 DESCRIPTION The HYM72V64C736AT4 Series are 64Mx72bits ECC Synchronous DRAM Modules. The modules are composed of eighteen 64Mx4bits CMOS Synchronous DRAMs in 400mil 54pln TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin

YM71

Contextual Info: HYM71V16655AT6 16Mx64, 8Mx16 based, PC100 DESCRIPTION The Hynix HYM71V16655AT6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 8Mx16bits CMOS Synchronous DRAMs In 400mil 54pln TSOP-II package, one 2Kbit EEPROM in Spin TSSOP package on a 168pin glass-epoxy

HYM7V65401

Contextual Info: HYM7V65401B L TQG 4Mx64, 4Mx16 based, PC100 DESCRIPTION The Hynix HYM7V65401B Q-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs In 400mll 54pln TSOP-II package and 2Kbit EEPROM in 8pln TSSOP package

hy57v168010b

Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
Contextual Info: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x

Contextual Info: TC554161FIL-70V/85V PRELIMINARY Standard SI it r. RAf.* TOSHIBA SILICON GATE CMOS 262,144 WORD x 16 BIT STATIC RAM Description TheTC554161FTL is a 4,194,304 bits static random access memory organized as 262,144 words by 16 bits a using CMOS technology, and operated from a single 3.0 ~ 5.5V power supply. Advanced circuit techniques provide both hig h _

W25X128

Abstract: W25Q40 w25q64 W25Q16BW W25Q64bv W25X80BV W25Q32BV W25016BV winbond* W25Q W25X16AV
Contextual Info: winband We D eliv er 2009 Product Selection Guide Mobile RAM Specialty DRAM Flash Memory Memory Product Foundry Service O W Product Selection Guide 2009 » Contents 2 Mobile RAM Pseudo SRAM Low Power SDR SDRAM Low Power DDR SDRAM 4 Specialty DRAM SDRAM DDR SDRAM

Contextual Info: HYM72V16M656T6 1SUx64,16Mx16 based, PC100 DESCRIPTION T h e H Y M 72 V 1 6 M 65 6 T 6 -S e rie s are high speed 3 .3 -V o lt S yn ch ro n o us D R A M M odules com posed o f fo u r 16M x16 bit S yn chronous D R AM s in 54-pln TS O P II and 8-pin T S S O P 2K b it E E P R O M on a 144-pin Zlg Z a g D ual pin glass-e p oxy

PC100

Abstract: PC133 54-PIN HYM71V653201
Contextual Info: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH

S-80723AN

Abstract: S-1810CF S-1820CF "universal remote control" chip
Contextual Info: CMOS 8-bit 1-chip MICROCOMPUTER S - 1 8 1 O C F / 1 8 2 0 C F The S-181 OCF/1820C F is a C M O S 8-bit m icrocom puter, which integrates an 8K-byte ROM, a 4K-byte S-1810C F or 2.3K -byte (S-1820CF) I/O RAM, a 14-bit counter, a 16-bit timer, general-purpose