GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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sce0004isc-432sc1815gt30j124+9smd transistor h2agt45f122tpcp8r01gt30f1232sc1815 smd typesmd marking 8l01h2a smd2sc54712sc5200 amplifiers circuit diagram
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9sce0004ksc-432sc1815700the+10gt30f124tpcp8r01gt30j124japanese 2sc transistor 2010smd transistor h2asmd marking 8l01tk25e06k3gt45f122gt30g124gt30f123
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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sce0004lttc41162sc4118tta1586+162sa15882sc41172sa15872sc52332sc47382sa1832gt30f131gt30f124tk18a60vsmd m5 transistor 6-pinsmd transistor h2a npngt50n322marking smd pnp transistor h2agt30j12430f124tpcp8r01
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TIP150
Contextual Info: SEMICONDUCTORS TIP150 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. High voltage, high forward and reverse energy designed for industrial and consumer applications.
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tip150o-220 |
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mj10016
Abstract: 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage,
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mj10015mj10016tip73btip74+15tip74atip74btip75tip75atip75btip75c2sc1173 equivalent silicon npn power transistorsbd139 equivalentequivalent of tip122mje340 equivalentbd435/fw26025a1 equivalent2n6059 equivalent2sd526 equivalent2n3773 equivalentmje371 equivalent
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BD650
Abstract: BD646 BD648 BD644 BD652 IC 648 bd650 bd649 audio 652 6 pin ic transistor bd650 BD643
Contextual Info: SEMICONDUCTORS BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.
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bd644/646/648/650/652o-220bd643bd645+12bd647bd649bd651bd644bd646bd648bd650bd652ic 648bd650 bd649 audio652 6 pin ictransistor bd650
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BD645
Abstract: bd647 BD649 darlington bd647 BD643 BD651 bd650 bd649 BD644 BD649 equivalent BD646
Contextual Info: SEMICONDUCTORS BD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.
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bd643/645/647/649/651o-220bd644bd646+11bd648bd650bd652bd643bd645bd647bd649darlington bd647bd651bd650 bd649bd649 equivalent
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TPC6801
Abstract: WJ 5252 F Battery chargers for portable dvd china SOT89 PNP marking GA MARKING WB SOT-89 2SC5703 TOSHIBA BIPOLAR POWER TRANSISTOR 2SA2056 2SA2058 2SC5738
Contextual Info: New Product Guide Low-Saturation-Voltage Power Transistors in small surface-mount packages PRODUCT GUIDE Low-Saturation-Voltage Power Transistors Overview Features These newly developed low-saturation-voltage transistors are based on the low-withstanding voltage Hi-Met III (3rd-generation high-efficiency mesh
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tpc6801wj 5252 fbattery chargers for portable dvd chinasot89 pnp marking ga+6marking wb sot-892sc5703toshiba bipolar power transistor2sa20562sa20582sc5738
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transistor equivalent of BU406
Abstract: bu406 replacement type transistor 2sc1827 transistor 1557 b transistor tip142 transistor 2SA1046 equivalent of transistor mje13007 BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU406 BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. • • • • 7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS
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220abbu406bu407tip73b+16tip74tip74atip74btip75tip75atip75btransistor equivalent of bu406bu406 replacement typetransistor 2sc1827transistor 1557 btransistor tip142transistor 2sa1046equivalent of transistor mje13007bu326bu108bu100
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CASE 221A Style 1
Abstract: BU108 BD907 equivalent Darlington NPN Silicon Diode NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2SC144 2N555 BU326 BU100 MJE520 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021 Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage,
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mj10020mj10021performa32tip73b+14tip74tip74atip74btip75case 221a style 1bu108bd907 equivalentdarlington npn silicon diodenpn power darlington transistors high voltage high icm to-2472sc1442n555bu326bu100mje520 equivalent
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mje13009 equivalent
Abstract: buv48 equivalent TRANSISTOR REPLACEMENT table for transistor BUV47 BD241A MOTOROLA BU108 TIP33C equivalent TIP41C EQUIVALENT BD4202 buv48
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power
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buv48/buv48abuv48buv48atip73b+15tip74tip74atip74btip75tip75atip75bmje13009 equivalentbuv48 equivalenttransistor replacement table for transistorbuv47bd241a motorolabu108tip33c equivalenttip41c equivalentbd4202
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BD139 fall time
Abstract: TRANSISTOR REPLACEMENT GUIDE transistor cross reference BUS98 2n3055 motor control circuits BU108 MJ10021 equivalent buv48 equivalent MJ2268 Motorola transistors MJE1100 TO 127
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUS98 BUS98A Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistors 30 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS BVCEO 250 WATTS 850 – 1000 V (BVCES) The BUS98 and BUS98A transistors are designed for high–voltage, high–speed,
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bus98bus98atip73btip74+13tip74atip74btip75tip75abd139 fall timetransistor replacement guidetransistor cross reference2n3055 motor control circuitsbu108mj10021 equivalentbuv48 equivalentmj2268motorola transistors mje1100 to 127
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application MJ10023
Abstract: BU108 2N6058 2n3055 motor control circuits darlington tip31 mj15004 equivalent BDX54 bd139 equivalent transistor MJ15022 equivalent 2SB56
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023 Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS The MJ10022 and MJ10023 Darlington transistors are designed for high–voltage,
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mj10022mj10023performanc32tip73b+14tip74tip74atip74btip75application mj10023bu1082n60582n3055 motor control circuitsdarlington tip31mj15004 equivalentbdx54bd139 equivalent transistormj15022 equivalent2sb56
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LM3046
Contextual Info: LM3046 LM3046 Transistor Array Literature Number: SNLS372A LM3046 Transistor Array General Description Features The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentiallyconnected pair. The transistors are well suited to a wide
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lm3046snls372a14-lead |
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AMPLIFIER 2SD718 2sb688 schematic
Abstract: MJ900 2SD718 2sb688 amplifier schematic 2SC1419 2SA94 2SA124 2SD331 2SC1116 IR403 2SC2250
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ1000 MJ1001* Medium-Power Complementary Silicon Transistors *Motorola Preferred Device . . . for use as output devices in complementary general purpose amplifier applications. 10 AMPERE DARLINGTON POWER TRANSISTORS
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mj1000mj1001tip73btip74+16tip74atip74btip75tip75atip75btip75camplifier 2sd718 2sb688 schematicmj9002sd718 2sb688 amplifier schematic2sc14192sa942sa1242sd3312sc1116ir4032sc2250
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2sd880 equivalent
Abstract: tip3055 equivalent BU108 mje2055 2n3055 motor control circuits 2N6576 equivalent equivalent of 2sc2071 2N6107 equivalent BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5850 MJE5851* MJE5852* Data Sheet Designer's SWITCHMODE Series PNP Silicon Power Transistors *Motorola Preferred Device 8 AMPERE PNP SILICON POWER TRANSISTORS 300, 350, 400 VOLTS 80 WATTS The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They
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mje5850mje5851mje5852tip73b+16tip74tip74atip74btip75tip75atip75b2sd880 equivalenttip3055 equivalentbu108mje20552n3055 motor control circuits2n6576 equivalentequivalent of 2sc20712n6107 equivalentbu326bu100
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Motorola transistors MJE3055 TO 127
Abstract: MJE1092 transistors 2sd673 2SC1419 transistor MJE6043 BU124 MJW16010 BD590 2SB654 bdw93c pin configuration
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN D44VH PNP D45VH Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high–speed switching applications, such as switching regulators and high frequency inverters.
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d44vhd45vhtip73btip74+16tip74atip74btip75tip75atip75btip75cmotorola transistors mje3055 to 127mje1092transistors 2sd6732sc1419transistor mje6043bu124mjw16010bd5902sb654bdw93c pin configuration
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BU108
Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS
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2n58772n5878tip73btip74+16tip74atip74btip75tip75atip75btip75cbu10862-3-1-22n555mj43612sc889mj1000mj3237bdw94bd95dts801
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2SA1046
Abstract: BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS
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2n63872n6388220abtip73b+8tip74tip74a2sa1046bu108transistor bc 239 cbu326bu100mje15033 replacement
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2Sd331 npn transistor
Abstract: 724 motorola NPN Transistor with collector heat pad BU108 2SA1046 MJ15003 300 watts amplifier MOTOROLA MJD122 application note ST T4 3580 724 motorola NPN Transistor with heat pad BDX54 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD122* PNP MJD127* Complementary Darlington Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS
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2n60402n6045tip120tip122+16tip125tip127mjd122mjd127tip73btip742sd331 npn transistor724 motorola npn transistor with collector heat padbu1082sa1046mj15003 300 watts amplifiermotorola mjd122 application notest t4 3580724 motorola npn transistor with heat padbdx54bu326
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2SC1943
Abstract: 2n5037 2SC2322 2sa1046 bd349 bD127 BUV18A 2SC1903 mje5195 2SD341
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Advance Information Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high–power audio, disk head positioners, and other linear applications. These devices
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mj15011mj15012tip73btip74+14tip74atip74btip75tip75a2sc19432n50372sc23222sa1046bd349bd127buv18a2sc1903mje51952sd341
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2sc5066
Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs
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sce0004i2sc380tm2sc5066mt3s111p+8mt3s111toshiba transistors catalogtim4450-4ultgi1314-50lmt3s106mt4s200tx-band low noise amplifiers toshiba2sc3136
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A-083081-2
Abstract: RETS195H
Contextual Info: LM195,LM395 LM195/LM395 Ultra Reliable Power Transistors Literature Number: SNOSBO4B LM195/LM395 Ultra Reliable Power Transistors General Description The LM195/LM395 are fast, monolithic power integrated circuits with complete overload protection. These devices,
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lm195lm395lm195/lm395a-083081-2+1rets195h
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MJ15015 TRANSISTOR REPLACEMENT GUIDE
Abstract: MJ15015 equivalent MJ2955 replacement 2N3055A 2n3055 2N3055 BU108 tr bc 338 MJ15015 parts 2SB75 2SC1051
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon High-Power Transistors 2N3055A MJ15015* . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power
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2n3055mj29552n3055amj15015+15mj2955amj15016tip73btip74tip74atip74bmj15015 transistor replacement guidemj15015 equivalentmj2955 replacement2n3055a 2n3055bu108tr bc 338mj15015 parts2sb752sc1051
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