2SA94 Search Results

2Sc2073

Abstract: 2Sa940 2-10a1a
Contextual Info: 2 S C 2 0 7 3 SILICQNNPN triple pffusedtype pcj process Unit in mm PO W ER AMPLIFIER APPLICATIONS. VERTICAL OUTPUT APPLICATIONS. • • Wide Safe Operating Area. Complementary to 2SA940 SlO< M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2SA949

Contextual Info: TOSHIBA 2SA949 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SA949 Unit in mm DRIVER STAGE AUDIO AM PLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. • • • 5 1 MAX. High Breakdown Voltage : V£Eo = —150V Low Output Capacitance : Cob = 5.0pF Max.

2SA940

Abstract: 2SC2703
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SA940 TRANSISTOR PNP TO-220 1. BASE FEATURES z Wide safe Operating Area. z Complementary to 2SC2703 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

A940A

Abstract: 2SA940A A940 2SC2073A
Contextual Info: 2SA940A TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT Process 2SA940A Power Amplifier Applications Vertical Output Applications • Unit: mm Complementary to 2SC2073A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

T1P42C

Abstract: T1P-42C 53a33 2sb85 T1P42A T1P32B T1P32A
Contextual Info: POWER PACKAGE TRANSISTORS PNP M axim um R atin gs E lectrical C h aracte ristics VCE0 v EBO PD 'CBO « v CB (V) (V) (W) (V) Un Mn Mn a Tc=25°C MJE350T 300 300 3 21 100 300 30 240 0.05 10 2SA940 150 150 5 25 10 120 40 140 0.50 10 1.5 BD240C 115 100 5 30

2SA940

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SA940 TRANSISTOR PNP TO-220 1. BASE FEATURES z Wide safe Operating Area. z Complementary to 2SC2703 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SA949

Contextual Info: TOSHIBA 2SA949 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SA949 Unit in mm DRIVER STAGE AUDIO AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. • • • High Breakdown Voltage : V c e O= —150V Low Output Capacitance : Cob = 5.0pF Max.

2SA940A

Abstract: 2SC2073A
Contextual Info: TOSHIBA 2SA940A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SA940A Unit in mm PO W ER AM PLIFIER APPLICATIONS VERTICAL OUTPUT APPLICATIONS 10 ± 0.3 03.2 ± 0.2 I- "L - • 2.7± 0.2 Complementary to 2SC2073A

transistor a949

Abstract: A949 2SA949 a949 transistor TOSHIBA a949
Contextual Info: 2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications • High breakdown voltage: VCEO = −150 V • Low output capacitance: Cob = 5.0 pF max • High transition frequency: fT = 120 MHz (typ.)

2SA940

Abstract: 2SA940 equivalent Ic-500mA
Contextual Info: 2SA940 2SA940 TRANSISTOR PNP TO-220 FEATURES Power dissipation PCM : 1.5 1. BASE 2. COLLECTOR W (Tamb=25℃) 3. EMITTER Collector current ICM : -1.5 A Collector-base voltage V V(BR)CBO : -150 Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃

2SA940

Abstract: 2SC2073
Contextual Info: AOK AOK Semiconductor Product Specification 2SA940 S ilicon PNP Power Transistors DESCRIPTION • W ith T 0 2 2 0 p acka g e • C o m p le m e n t to typ e 2 S C 2 0 7 3 APPLICATIONS • P o w e r a m p lifie r a p p lic a tio n s • V e rtic a l o u tp u t a p p lic a tio n s

transistor a949

Abstract: A949 a949 transistor A949 Y 2SA949
Contextual Info: 2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications • High breakdown voltage: VCEO = −150 V • Low output capacitance: Cob = 5.0 pF max • High transition frequency: fT = 120 MHz (typ.)

2SA940

Abstract: 2SC2073
Contextual Info: JMnic Product Specification 2SA940 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC2073 APPLICATIONS ・Power amplifier applications ・Vertical output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2SA940

Abstract: Z10A1 2sc2073
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SA940 Unit in nan POWER A M P L I F I E R 10.31ÍAX. 0:s.6±az AP P LIC A TIO N S . V E R T IC A L OUTPUT A P P L IC A T IO N S - FEATURES: . Complementary to 2SC2073 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING

2SC2073

Abstract: 2sc2073 amplifier transistor 2sc2073 2SA940
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2073 DESCRIPTION •Collector-Emitter Breakdown Voltage:V BR CEO= 150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SA940 APPLICATIONS ·Power amplifier applications.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR NPN TO-220 1. BASE FEATURES z Wide safe Operating Area. z Complementary to 2SA940 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SA940

Abstract: 2SA940 equivalent 2SC2073
Contextual Info: PNP 2SA940 EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT TO-220 ! Complementary to 2SC2073 ABSOLUTE MAXIMUM RATING Ta=25°c c Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC)

2SA940

Abstract: 2SC2073 2SA94 PEC 120V
Contextual Info: ÆàMOS PEC PNP SILICON POWER TRANSISTORS PNP 2SA940 2SA940 transistor is designed for use in general purpose power amplifier,vertical output application FEATURES: * Collector-Emitter Voltage VCEO= 150V Min * DC Current Gain hFE= 40-140@lc= 500mA * Complementary NPN 2SC2073

2SC2073

Abstract: 2SA940
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR NPN TO-220 1. BASE FEATURES z Wide safe Operating Area. z Complementary to 2SA940 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

mx 2sb834

Abstract: 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073
Contextual Info: TO-220 PACKAGE MX MICROELECTRONICS ● Applied widely for TV,Av,power amplifiers power drive e.c.t. Pd TYPE NPN *Tc= OR 25℃ W PNP 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 BUT11 BUT11A PNP NPN NPN PNP NPN NPN NPN PNP NPN NPN NPN ICBO

Contextual Info: TOSHIBA 2SA940A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 7 <; A Q A H A Unit in mm POWER AMPLIFIER APPLICATIONS VERTICAL OUTPUT APPLICATIONS 101 0.3 • ^3.2 ±0.2 2_,7±g Complementary to 2SC2073A MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING

2SC2073

Abstract: transistor 2sc2073
Contextual Info: 2SC2073 NPN TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER Features — — 1 2 3 Wide safe Operating Area. Complementary to 2SA940 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Dimensions in inches and (millimeters) Paramenter Value Units

A940A

Contextual Info: 2SA940A TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT Process 2SA940A Power Amplifier Applications Vertical Output Applications • Unit: mm Complementary to 2SC2073A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage