T1P32B Search Results

T1P42C

Abstract: T1P-42C 53a33 2sb85 T1P42A T1P32B T1P32A
Contextual Info: POWER PACKAGE TRANSISTORS PNP M axim um R atin gs E lectrical C h aracte ristics VCE0 v EBO PD 'CBO « v CB (V) (V) (W) (V) Un Mn Mn a Tc=25°C MJE350T 300 300 3 21 100 300 30 240 0.05 10 2SA940 150 150 5 25 10 120 40 140 0.50 10 1.5 BD240C 115 100 5 30

TIP31AF

Abstract: TIP31BF TIP31CF TIP31DF TIP31F TIP32BF TIP32DF TIP32F
Contextual Info: TIP32F; 32AF TIP32BF; 32CF TIP32DF SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SOT186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed

Contextual Info: TO-220 Power Package Transistors PNP Electrical Characteristics (Ta=25 C. Unless Otherwise Specified) Maximum Ratings Type No. TIP117 V C80 V CEO ^EBO (V) Min (V) Min (V) Min 100 100 5 pc (W) @Tc=25“c 50 <c (A) 2 *C80 (pA) Max 1000 @ (V) V.ÍS V CE (mA)

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

1n52408

Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which

T1P127

Abstract: T1P42C TIP3iC T1P-127 MJE350T 2SA940 BD240C BD242B BD242C MJE2S55T
Contextual Info: PO W ER P A C K A G E T R A N SIST O R S PNP M a x im u m R a t in g s Typ» No. VcBO Electrical C h a ra c te ris tic s « vCB « lc 4 VCE 00 hin VCE0 (V) Mn MJE350T 300 300 3 21 100 300 30 240 0.05 10 2SA940 150 150 5 25 10 120 40 140 0.50 10 1.5 BD240C

TIp328

Abstract: TIP31 PNP Transistor T1P32A
Contextual Info: TIP32, TIP32A,TtP32B, TIP32C PNP SILICON POWER TRANSISTORS C o p y right 1997, Pow er Innovations Limited, U K • Designed tor Complementary Use with the TIP31 Series • 40 W at 25°C Case Temperature • 3 A Continuous Collector Current • 5 A Peak Collector Current

T1P32B

Contextual Info: ^ 33- H Power Transistors TIP32, TIP32A, TIP32B, TIP32C HARRIS SEMICOND SECTOR File N um ber 27E D H 4302571 0050344 987 2 • HAS Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors For Power-Am plifier and High-Speed-Switching Applications Fea tu re s: ■

TIP32AF

Abstract: TIP32DF TIP31AF TIP31BF TIP31CF TIP31F TIP32BF TIP32F 32-AF
Contextual Info: TIP32F; 32 A F TIP32BF; 32CF TIP32DF PHILIPS INTERNATIONAL SbE D • 7110a2b 0 0 4 3 ^ 0 210 M P H I N T - 3 3 - 1 7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.

MJE520

Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
Contextual Info: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic