2SB85 Search Results

transistor 206

Abstract: 2sb857
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR „ DESCRIPTION Low frequency power amplifier. *Pb-free plating product number: 2SB857L „ ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB857-x-T6C-A-K 2SB857L-x-T6C-A-K

pnp transistor d 640

Abstract: 2SB857 transistor 2SB857
Contextual Info: DC COMPONENTS CO., LTD. 2SB857 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28 .380(9.66) .295(7.49)

transistor Ic 1A datasheet

Abstract: transistor Ic 1A datasheet NPN 2SB857 2SD1133
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1133 DESCRIPTION •Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE sat = 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB857

Contextual Info: 2SB856 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline T O -2 2 0 A B 1. B a s e 2 . C o lle c to r 1 F la n g e 2 3 Absolute Maximum Ratings (Ta = 3 . E m itte r 25°C) Item Symbol Rating Collector to base voltage

Contextual Info: TO-220 Power Package Transistors PNP Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Maximum Ratings Type No. Pd (W) @Tc=25°c teo ^CBO (V) Min ^CEO ^EBO (V) Min (V) Min 2SB858C 70 60 5 40 4 1 2SB858D 70 60 5 40 4 1 BD240 55 45 5 30 2 200

Contextual Info: MCC TM Micro Commercial Components Features • • • • • 2SB857-B 2SB857-C 2SB857-D
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Halogen free available upon request by adding suffix "-HF"

2SA1015

Abstract: 2SA1358 2SA965 2SB1212 2SB560 sa1015 2SA934 2SA985 NEC 2SA1096 2SA385
Contextual Info: - 6 - m % « tt T y p e No. Manuf. = í¥ SANYO TOSHIBA m NEC B ÎL HITACHI * 2SA 479 m S * * ac s * 2S A 480 y.- - * 2S A 482 * * 2 S A 4 8 3 *-' 2SB596 2SA985 2SB507 2SB596 2SA985 2SB856 2SA836 2SA 4 ? 3 ^ ' * 2SA 474 ^ * 2SA 475 * 2 S A 4 7 7 ír. * 2SA 478 ^

Contextual Info: 2SD1135 Silicon NPN Triple Diffused H ITACH I Application Low frequency power amplifier complementary pair with 2SB859 Outline TO -220AB -« [ 1 Base 2 Collector Flange) 3 Emitter II 1 r) [] •3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

2SD1135

Contextual Info: 2SD1135 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB859 Outline T 0 -2 2 0 A B . 1 B a se 2. C o lle c to r F la n g e 3. E m itte r Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings

2sb857

Abstract: 2sb858
Contextual Info: 2SB857, 2SB858 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134 Outline T 0-2 2 0 A B f V vl 1. Base 2. Collector Flange 3. Em itter •| 2 .3 Absolute Maximum Ratings (Ta = 25°C)

T147

Abstract: 2sb852k-a 2SB852K T146
Contextual Info: h V > y X £ /Transistors 2SB852K 2SB852K 7iu I y u - t l PNP y U □ > h7 >y X * Epitaxial Planar PNP Silicon Transistor Darlington ¡1^Jfl^fi/High Gain Amp. • W f^ t& IiS /D im ension s (U n it: mm) • « * 1) h > g ^ T ' i a h FE - ? * 5 o 2) B E H ( C i K l4 k Q < D f i S t S r t i « o » 8 $

2SB852K

Abstract: 2SD1383K T146
Contextual Info: 2SB852K Transistors High-gain Amplifier Transistor −32V, −0.3A 2SB852K zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1383K. 2SB852K

2sb857

Contextual Info: 2SB857,2SB858 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2 S D 1 133 and 2 S D 1 134 Outline TO-220AB 1. Base 2. Collector Flange 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 °C) Ratings Item

Hitachi DSA00279

Contextual Info: 2SD1135 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB859 Outline TO-220AB 1 1. Base 2. Collector Flange 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

2SB858

Abstract: 2SB857 2SD1133 2SD1134 DSA003644
Contextual Info: 2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134 Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C)

2SB859

Abstract: 2SD1135 DSA003645
Contextual Info: 2SD1135 Silicon NPN Triple Diffused ADE-208-906 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB859 Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

2SB852K

Abstract: 2SD1383K
Contextual Info: High-gain Amplifier Transistor 32V , 0.3A 2SD1383K Features 1) Darlington connection for high DC current gain. 2) Built-in 4k resistor between base and emitter. 3) Complements the 2SB852K. Dimensions (Unit : mm) 2SD1383K Packaging specifications

2SB351

Abstract: 2SB1278 2sb127 2SB851 T-27-15
Contextual Info: ROHM CO LTD * MOE D WÊ 7 0 2 0 ^ OOOS^M 2SB851 /2SB1278 h 7 > V 7 £ /Transistors ' 2SB351 2S3127S ö B 9 RHfl " ' . T -2 7 - /ST X L°£ * y 7 1 7 ° I s - f M PNP y U =1 > h ^ > 9 'Z $ 4 ,ffi^ )is llïffl/M e d iu m Power Amp. Epitaxial Planar PNP Silicon Transistors

Contextual Info: HITACHI S 2 D 1 1 3 5 SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SB859 i Báse 7 C V iW v lo r 3 *;m,ucí ít ín»cni»ot',» jn utrtv) JEDEC TO -220A 8) I A B SO LUTE M AXIM UM RATINGS ( T a - i.W ) liem j Symbol

2SD852K

Contextual Info: 2SB852K / 2SA830S 2SD1383K / 2SC1645S Transistors I High-gain Amplifier Transistor —32V, —0.3A 2SB852K / 2SA830S •F e a tu re s 1 ) Darlington connection fo r high DC current gain. 2 ) Built-in 4 k Q resistor between base and emitter. 3 ) Complements the 2SDl383Ki&#39;2SD1645S.

transistor on 4436

Abstract: in 4436 on 4436 darlington pnp CJC0 4436 transistor bf 246 00E-6 2SB852K Darlington pnp spice
Contextual Info: SPICE PARAMETER 2SB852K * 2SB852K DARLINGTON PNP BJT model * Date: 2006/12/13 *C B E .SUBCKT 2SB852K 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model .6971 R1 4 3 4k .MODEL Q1model PNP + IS=30.00E-15 + BF=400 + VAF=25 + IKF=1.246 + ISE=30.00E-15 + NE=1.286

Contextual Info: 2SB852K Transistors High-gain Amplifier Transistor −32V, −0.3A 2SB852K zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1383K. 2SB852K

2SB857

Abstract: 2SB858
Contextual Info: JMnic Product Specification 2SB857 2SB858 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD1133/1134 APPLICATIONS ・Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base

s10r

Abstract: 2SD111 2SD1117 C 5388 2SB850 T151 T760 p4ve
Contextual Info: 2SB850 P N P X t " ^ + 5 ^ T V ~ 7 \s — i~ J f} E P IT A X IA L P L A N E R T Y P E g e n e r a l p u r p o s e p o w e r a m p l if ie r : Features • hFE0>,J -7 ’,|; T - ' f E x c e l l e n t linearity in hFE • High collector current • A S C W a *.'