MJE350T Search Results

T1P42C

Abstract: T1P-42C 53a33 2sb85 T1P42A T1P32B T1P32A
Contextual Info: POWER PACKAGE TRANSISTORS PNP M axim um R atin gs E lectrical C h aracte ristics VCE0 v EBO PD 'CBO « v CB (V) (V) (W) (V) Un Mn Mn a Tc=25°C MJE350T 300 300 3 21 100 300 30 240 0.05 10 2SA940 150 150 5 25 10 120 40 140 0.50 10 1.5 BD240C 115 100 5 30

T1P127

Abstract: T1P42C TIP3iC T1P-127 MJE350T 2SA940 BD240C BD242B BD242C MJE2S55T
Contextual Info: PO W ER P A C K A G E T R A N SIST O R S PNP M a x im u m R a t in g s Typ» No. VcBO Electrical C h a ra c te ris tic s « vCB « lc 4 VCE 00 hin VCE0 (V) Mn MJE350T 300 300 3 21 100 300 30 240 0.05 10 2SA940 150 150 5 25 10 120 40 140 0.50 10 1.5 BD240C

Contextual Info: MJE350T Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)135õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

350T

Abstract: SGS340
Contextual Info: 7 ^ 2 3 7 005=1003 SCS-THOMSON ^ HILiCT@[fflD@§ S G S-TH0M S0N b • ^ T '3 3 ' 0 °\ MJ E340/T/SGS340 MJE350/T/SGS350 30E D HIGH VOLTAGE POWER TRANSISTORS DESCRIPTION The MJE340, MJE340T, SGS340 are silicon epi­ taxial planar NPN transistors intended for use in

mje520

Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
Contextual Info: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen­ hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50

JE340

Contextual Info: r z 7 SGS-THOMSON ^7# MJE340/T/SGS340 MJ E350/T/SGS350 HIGH VOLTAGE POWER TRANSISTORS DESCRIPTION The M JE340, MJE340T, SGS340 are silicon e p i­ taxial planar NPN transistors intended for use in m edium power linear and sw itching applications. They are respectively m ounted in TO-125, TO-220

2SA566

Abstract: 40319 2sa8160 2SA816-Y 2SA816Y 2SA13560 40634S 2SA816 TN2905 MJ4646
Contextual Info: POWER SILICON PNP Item Number Part Number I C -5 10 15 20 25 30 35 40 45 50 60 2SB806 2SA1248 40634 40319 40319L 40319S 40406 40538 :g~~:~ 65 70 40537 40537L 40537S 40362 40362L 40362S 40634L 40634S ~~~~g~7 75 80 85 90 95 Ic Max V(BR)CEO (A) (V) hFE Min Max

2M3055

Abstract: B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908
Contextual Info: G E N E R A L P U R P O S E T R A N S IS T O R S Comple­ Type mentary V CE0 V CB0 V (V) 'c (A) hFE * 'c (A) V CE V CEsat (V) (V) 9 'c (A) 'b R 1hj-c (mA) fC/W) 1.5 1.17 1.17 1.17 1.17 1399 1047 1047 1053 1053 T O -3 T O -3 T O -39 T O -3 T O -3 1047 1047