A940A
Abstract: 2SA940A A940 2SC2073A
Contextual Info: 2SA940A TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT Process 2SA940A Power Amplifier Applications Vertical Output Applications • Unit: mm Complementary to 2SC2073A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SA940A
Abstract: 2SC2073A
Contextual Info: TOSHIBA 2SA940A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SA940A Unit in mm PO W ER AM PLIFIER APPLICATIONS VERTICAL OUTPUT APPLICATIONS 10 ± 0.3 03.2 ± 0.2 I- "L - • 2.7± 0.2 Complementary to 2SC2073A
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Contextual Info: TOSHIBA 2SA940A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 7 <; A Q A H A Unit in mm POWER AMPLIFIER APPLICATIONS VERTICAL OUTPUT APPLICATIONS 101 0.3 • ^3.2 ±0.2 2_,7±g Complementary to 2SC2073A MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING
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A940A
Contextual Info: 2SA940A TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT Process 2SA940A Power Amplifier Applications Vertical Output Applications • Unit: mm Complementary to 2SC2073A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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Contextual Info: 2SA940A TO SHIBA 2SA940A TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS VERTICAL OUTPUT APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Complementary to 2SC2073A MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING CHARACTERISTIC Collector-Base Voltage
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2SA940A
Abstract: 2SC2073A
Contextual Info: TO SH IBA 2SA940A 2SA940A TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS VERTICAL OUTPUT APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm 10 ±0.3 r • Complementary to 2SC2073A o ^3.2 ± 0.2 o 1.1 2.7±Q 2 o +i in 1.1 0.75 ±0.15 2.54±0.25
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Contextual Info: TO SHIBA 2SC2073A TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S C 2 Q7 3 A U nit in mm VERTICAL OUTPUT APPLICATIONS 10 + 0.3 • Wide Safe Operating Area. • Complementary to 2SA940A £ 0 o 1.1 MAXIMUM RATINGS (Ta = 25°C)
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A940A
Contextual Info: 2SA940A TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT Process 2SA940A Power Amplifier Applications Vertical Output Applications • Unit: mm Complementary to 2SC2073A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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TOSHIBA VERTICAL IC
Abstract: 2SA940A 2SC2073A
Contextual Info: TOSHIBA 2SC2073A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC2073A Unit in mm PO W ER AM PLIFIER APPLICATIONS VERTICAL OUTPUT APPLICATIONS r (V) • • Wide Safe Operating Area. Complementary to 2SA940A 1.1 M A X IM U M RATINGS (Ta = 25°C)
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2sc2073a2sa940asc-672-10r1a+211-1-rtoshiba vertical ic
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heat sink design toshiba
Abstract: 2SA940A 2SC2073A
Contextual Info: TO SH IBA 2SA940A 2SA940A TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS VERTICAL OUTPUT APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm 10 ±0.3 r • Complementary to 2SC2073A o ^3.2 ± 0.2 o 1.1 2.7±Q 2 o +i in 1.1 0.75 ±0.15 2.54±0.25
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2SA940A
Abstract: 2SC2073A
Contextual Info: TO SH IBA 2SC2073A TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC2073A Unit in mm VERTICAL OUTPUT APPLICATIONS r • • Wide Safe Operating Area. Complementary to 2SA940A A0 ^3.2 ± 0.2 -TjiK RATING
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2-10R1A
Abstract: C2073A 2SC2073A
Contextual Info: 2SC2073A 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SC2073A ○ 電力増幅用 ○ 垂直偏向出力用 単位: mm 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧 VCBO 150
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C2073
Abstract: C2073A 2SC2073A
Contextual Info: 2SC2073A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC2073A Power Amplifier Applications Vertical Output Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 150 V
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2SA940A
Abstract: 2SC2073A
Contextual Info: TO SH IBA 2SC2073A TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC2073A Unit in mm VERTICAL OUTPUT APPLICATIONS r • • Wide Safe Operating Area. Complementary to 2SA940A A0 ^3.2 ± 0.2 - K RATING
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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stvdst-01cat22stk411-230estk411-220e+8stk442-130pal005aupc2581vfn1016strg6153rsn313h25stk407-070bmcz3001d
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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sce0004lttc41162sc4118tta1586+162sa15882sc41172sa15872sc52332sc47382sa1832gt30f131gt30f124tk18a60vsmd m5 transistor 6-pinsmd transistor h2a npngt50n322marking smd pnp transistor h2agt30j12430f124tpcp8r01
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IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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scj0004rsc-432sc18152sc732tm+142sc19592sa10152sc22402sa970igbt gt30f124igbt gt30j124gt30f124gt30j124gt50n322tk25e06k3tpcp8r01tk12a10k3gt30g1242sk3075
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2sC5200, 2SA1943
Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current
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bce0016d2sc5200, 2sa19432sa1941 equivalent2sc5353 equivalent+72sc5198 equivalentamplifier circuit using 2sa1943 and 2sc52002sc2383 equivalenttpcp8l012sa1962 equivalent2sc4793 2sa18372sa1013 equivalent
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smd transistor h2a
Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output
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bce0016ce-28831bce0016dsmd transistor h2a+9smd transistor h2a npntransistor smd h2a2sa1943 amplifier circuit diagramtpcp8l012sc5200, 2sa1943h2a transistor smd2sc5200 power amplifiers diagrammarking smd pnp transistor h2asmd h2a
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9sce0004ksc-432sc1815700the+10gt30f124tpcp8r01gt30j124japanese 2sc transistor 2010smd transistor h2asmd marking 8l01tk25e06k3gt45f122gt30g124gt30f123
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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sc-432sc1815tps615tps616+11tps610transistor bc 245247ysmd transistor h2agt30g122gt35j321gt45f123marking smd pnp transistor h2agt45f122gt45f122 seriesgt30f122
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2SA1941 amp circuit
Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including
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bce0016f2sa1941 amp circuit2sc33032sd880+7to3p package2sa114smd transistor h2a2sb834amplifier circuit using 2sa1943 and 2sc5200toshiba bipolar power transistoramplifier design tta1943
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2sC5200, 2SA1943
Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4
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ttc003sc-64bcj0016fbcj0016e+92sc5200, 2sa1943tpcp8l01tpcp86022sc5200 2sa19432sc52002sc4793 2sa18372sc5200, 2sa1943, 2sc5198ttc13003l2sc3180n
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2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228
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sc-63/64sc-62sc-59ot-23+162sa14832sc38032sa14262sa12042sa17342sa20652sa1930 2sc5171tpc8107 equivalenttpc8107 application circuit2sc4157 equivalent2sa1930 transistor equivalent2sa949 equivalent2sd880 equivalentequivalent 2sc52002sk2865 equivalentmarking 4d npn
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