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    2SC5703 Search Results

    2SC5703 Datasheets (3)

    Toshiba
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SC5703
    Toshiba Transistor Original PDF 938.03KB 48
    2SC5703
    Toshiba NPN Transistor Original PDF 168.55KB 5
    2SC5703(TE85L,F)
    Toshiba 2SC5703 - Trans GP BJT NPN 50V 4A 3-Pin TSM T/R Original PDF 141.18KB 5
    SF Impression Pixel

    2SC5703 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components 2SC5703(TE85L,F)

    Trans GP BJT NPN 50V 4A 800mW 3-Pin TSM T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SC5703(TE85L,F) 2,950 11
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    • 100 $0.16
    • 1000 $0.16
    • 10000 $0.16
    Buy Now
    Avnet Asia 2SC5703(TE85L,F) 28 Weeks 3,000
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    Toshiba America Electronic Components 2SC5703TE85LF

    SILICON NPN EPITAXIAL TYPE TRANSISTOR Small Signal Bipolar Transistor, 4A I(C), 1-Element, NPN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SC5703TE85LF 3,000
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    2SC5703 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC5703

    Contextual Info: 2SC5703 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5703 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ・エミッタ間飽和電圧が低い。 : VCE sat = 0.12 V (最大)


    Original
    2sc5703 PDF

    2sc5703

    Contextual Info: 2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


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    2sc5703 PDF

    Contextual Info: 2SC5703 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Industrial Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


    Original
    2sc5703 PDF

    Contextual Info: 2SC5703 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC5703 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


    Original
    2sc5703 PDF

    2SC5703

    Contextual Info: 2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


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    2sc5703 PDF

    Contextual Info: Reliability Tests Report Product Name: 2SC5703 Package Name: TSM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s


    Original
    2sc5703 PDF

    Contextual Info: 2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


    Original
    2sc5703 PDF

    Contextual Info: 2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


    Original
    2sc5703 PDF

    2SC5703

    Contextual Info: 2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


    Original
    2sc570310oducts PDF

    Contextual Info: 2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


    Original
    2sc5703 PDF

    2SC5703

    Contextual Info: 2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


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    2sc5703 PDF

    23S1A

    Abstract: 2SC5703
    Contextual Info: 2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A · Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


    Original
    2sc570323s1a PDF

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Contextual Info: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


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    bce0013ccircuit diagram of luminous invertertc7600fngsine wave pwm dc to ac inverter ics+73 phase inverter 180 degree conduction mode wavecircuit diagram of toshiba washing machineuln2003apg3 phase inverter 150 degree conduction mode wave3 phase motor soft starter igbt circuit diagrammicrowave cooking circuit diagramtb6584fng PDF

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    stvdst-01cat22stk411-230estk411-220e+8stk442-130pal005aupc2581vfn1016strg6153rsn313h25stk407-070bmcz3001d PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


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    sce0003aesm 740transistor smd t04 51d245a+7lm2804transistor smd t04solar garden light controller 4 pin2fu smd transistortransistor t04 smdpnp octal darlington transistor arrays dipwb126 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    scj0004rsc-432sc18152sc732tm+142sc19592sa10152sc22402sa970igbt gt30f124igbt gt30j124gt30f124gt30j124gt50n322tk25e06k3tpcp8r01tk12a10k3gt30g1242sk3075 PDF

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


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    bce0016d2sc5200, 2sa19432sa1941 equivalent2sc5353 equivalent+72sc5198 equivalentamplifier circuit using 2sa1943 and 2sc52002sc2383 equivalenttpcp8l012sa1962 equivalent2sc4793 2sa18372sa1013 equivalent PDF

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


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    02cz1002cz1102cz1202cz13+1502cz1502cz1602cz1802cz202cz20stf12a80bstc1026bstd1046btb04-600sapstf6a80bstd1040to510dhbstc1040to812njbtb15-700b PDF

    tb6584

    Abstract: TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram
    Contextual Info: 2008-9 SYSTEM CATALOG Home Appliances s e m i c o n d u c t o r h t tp://w w w.se micon.tosh iba.co.jp/e n g Air Conditioners Induction Rice Cookers C O N T E N T S Characteristics of Motor Control Devices. 3 Dishwashers


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    tlcs-870/c1sce0013be-28831sce0013c+10tb6584tk8a50d equivalentcircuit diagram of luminous invertercircuit diagram of toshiba washing machinegt35j321gt50n322full automatic washing machines microcontrollertb6574samsung washing machine circuit diagramwashing machine control panel circuit diagram PDF

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


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    bce0016ce-28831bce0016dsmd transistor h2a+9smd transistor h2a npntransistor smd h2a2sa1943 amplifier circuit diagramtpcp8l012sc5200, 2sa1943h2a transistor smd2sc5200 power amplifiers diagrammarking smd pnp transistor h2asmd h2a PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    2010/9sce0004ksc-432sc1815700the+10gt30f124tpcp8r01gt30j124japanese 2sc transistor 2010smd transistor h2asmd marking 8l01tk25e06k3gt45f122gt30g124gt30f123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    sc-432sc1815tps615tps616+11tps610transistor bc 245247ysmd transistor h2agt30g122gt35j321gt45f123marking smd pnp transistor h2agt45f122gt45f122 seriesgt30f122 PDF

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


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    bce0016f2sa1941 amp circuit2sc33032sd880+7to3p package2sa114smd transistor h2a2sb834amplifier circuit using 2sa1943 and 2sc5200toshiba bipolar power transistoramplifier design tta1943 PDF

    TPC6801

    Abstract: WJ 5252 F Battery chargers for portable dvd china SOT89 PNP marking GA MARKING WB SOT-89 2SC5703 TOSHIBA BIPOLAR POWER TRANSISTOR 2SA2056 2SA2058 2SC5738
    Contextual Info: New Product Guide Low-Saturation-Voltage Power Transistors in small surface-mount packages PRODUCT GUIDE Low-Saturation-Voltage Power Transistors Overview Features These newly developed low-saturation-voltage transistors are based on the low-withstanding voltage Hi-Met III (3rd-generation high-efficiency mesh


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    tpc6801wj 5252 fbattery chargers for portable dvd chinasot89 pnp marking ga+6marking wb sot-892sc5703toshiba bipolar power transistor2sa20562sa20582sc5738 PDF