23S1A Search Results

Contextual Info: SSM3J326T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM3J326T ○ Power Management Switch Applications Unit: mm 1.8-V drive Low ON-resistance: RDS(ON) = 115 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 62.5 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 45.7 mΩ (max) (@VGS = -4.5 V)

SSM3J321T

Contextual Info: SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS V SSM3J321T ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.5V drive Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.5 V) Ron = 88mΩ (max) (@VGS = -1.8 V)

SSM3K320T

Contextual Info: SSM3K320T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ SSM3K320T High-Speed Switching Applications Unit: mm 4.5 V drive Low ON-resistance : Ron = 77 mΩ (max) (@VGS = 4.5 V) : Ron = 50 mΩ (max) (@VGS = 10 V) +0.2 2.8-0.3 0.4±0.1

SSM3K318T

Contextual Info: SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ SSM3K318T ○ Load Switching Applications ○ High-Speed Switching Applications +0.2 2.8-0.3 4.5 V drive Low ON-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) : RDS(ON) = 107 mΩ (max) (@VGS = 10 V)

SSM3K302T

Contextual Info: SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications • • 1.8 V drive • Low ON-resistance: Unit: mm Ron = 131 mΩ max (@VGS = 1.8V) Ron = 87mΩ (max) (@VGS = 2.5V)

Contextual Info: SSM3J317T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: Ron = 306 mΩ max (@VGS = -1.8 V) : Ron = 144 mΩ (max) (@VGS = -2.8 V)

SSM3K316T

Contextual Info: SSM3K316T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K316T Power Management Switch Applications High-Speed Switching Applications • • Unit: mm 1.8-V drive Low ON-resistance: Ron = 131 mΩ max (@VGS = 1.8 V) Ron = 87 mΩ (max) (@VGS = 2.5 V)

SSM3J307T

Contextual Info: SSM3J307T 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSⅤ SSM3J307T ○ パワーマネージメントスイッチ ○ 高速スイッチング +0.2 2.8-0.3 1.5 V 駆動です オン抵抗が低い: Ron = 83 mΩ (最大) (@VGS = -1.5 V)

SSM3J02T

Contextual Info: SSM3J02T 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J02T ○ パワーマネジメントスイッチ ○ 高速スイッチング 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 0.5 Ω max (@VGS = −4 V)

SSM3J305T

Contextual Info: SSM3J305T 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J305T ○ DC-DC コンバータ ○ 高速スイッチング • 4V 駆動です • オン抵抗が低い 単位: mm : RDS ON = 477mΩ max (@VGS = −4 V) : RDS(ON) = 237mΩ max (@VGS = −10 V)

SSM3K303T

Contextual Info: SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications • 4 V drive • Low ON-resistance: Unit: mm Ron = 120 mΩ max (@VGS = 4V) Ron = 83 mΩ (max) (@VGS = 10V) Absolute Maximum Ratings (Ta = 25°C)

SSM3K302T

Abstract: PD1700
Contextual Info: SSM3K302T 東芝電界効果トランジスタ シリコンＮチャネルMOS形 SSM3K302T ○ パワーマネジメントスイッチ ○ 高速スイッチング 単位: mm • 1.8V 駆動です • オン抵抗が低い : Ron = 131mΩ 最大 (@VGS = 1.8V)

SSM3J314T

Contextual Info: SSM3J314T TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J314T ○ High Speed Switching Applications Unit: mm • Low ON-resistance: Ron = 100mΩ max (@VGS = -4.0 V) 54mΩ (max) (@VGS = -10 V) Unit Drain-Source voltage VDSS -30 V Gate-Source voltage

SSM3K310T

Contextual Info: SSM3K310T 東芝電界効果トランジスタ シリコンＮチャネルMOS形 SSM3K310T ○ 高速スイッチング • 1.5V 駆動です • オン抵抗が低い : Ron = 66mΩ 最大 (@VGS = 1.5V) 単位: mm +0.2 2.8-0.3 : Ron = 43mΩ (最大) (@VGS = 1.8V)

2sc5703

Contextual Info: 2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)

2SC6061

Contextual Info: 2SC6061 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6061 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 1 3 2 Rating Unit VCBO 180 V Collector-emitter voltage VCEX 150 V Collector-emitter voltage VCEO 120 V Emitter-base voltage

SSM3K01T

Contextual Info: SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications • · · Unit: mm Small Package Low on Resistance : Ron = 120 mΩ max (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V

SSM3J13T

Abstract: transistor KDH
Contextual Info: SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII Preliminary SSM3J13T Power Management Switch High Speed Switching Applications • • • UNIT : mm Small Package Low on Resistance : Ron = 70 mΩ (max) (＠VGS = −4 V) : Ron = 95 mΩ (max) (＠VGS = −2.5 V)

SSM3K302T

Contextual Info: SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications Unit: mm • • 1.8 V drive • Low ON-resistance: Ron = 131 mΩ max (@VGS = 1.8V) Ron = 87mΩ (max) (@VGS = 2.5V)

SSM3J306T

Abstract: MARKING JJ9
Contextual Info: SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications Unit: mm • 4 V drive • Low ON-resistance: Ron = 225 mΩ max (@VGS = −4 V) Ron = 117 mΩ (max) (@VGS = −10 V) Absolute Maximum Ratings (Ta = 25°C)

SSM3J304T

Abstract: 16t marking
Contextual Info: SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.8 V drive • Low ON-resistance: Unit: mm Ron = 297 mΩ max (@VGS = -1.8 V) Ron = 168 mΩ (max) (@VGS = -2.5 V)

SSM3J01T

Contextual Info: SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch High Speed Switching Applications • · · Unit: mm Small Package Low on Resistance : Ron = 0.4 Ω max (@VGS = −4 V) : Ron = 0.6 Ω (max) (@VGS = −2.5 V)

SSM3J312T

Abstract: SSM3J312
Contextual Info: SSM3J312T TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J312T High Speed Switching Applications Power Management Switch Applications Unit: mm Ron = 237mΩ max (@VGS = −1.8 V) Ron = 142mΩ (max) (@VGS = −2.5 V) Ron = 91mΩ (max) (@VGS = −4.0 V)

Contextual Info: SSM3K309T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K309T Power Management Switch Applications High-Current Switching Applications Unit: mm • 1.8V drive • Low on-resistance : Ron = 47mΩ max (@VGS = 1.8V) : Ron = 35mΩ (max) (@VGS = 2.5V)