MJE5850 Search Results

pnp 222A

Abstract: MJE5850 MJE5851 MJE5852 1N4934 1N4937 MJE15028 MJE15029 mje5851 transistor Motorola AN222A
Contextual Info: MOTOROLA Order this document by MJE5850/D SEMICONDUCTOR TECHNICAL DATA Designer's MJE5850 MJE5851* MJE5852 *  Data Sheet SWITCHMODE Series PNP Silicon Power Transistors *Motorola Preferred Device 8 AMPERE PNP SILICON POWER TRANSISTORS 300, 350, 400 VOLTS

pnp 222A

Contextual Info: ON Semiconductor MJE5850 MJE5851 * MJE5852 * SWITCHMODEt Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated

Contextual Info: MJE5850, MJE5851, MJE5852 SWITCHMODE Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated

MJE5852G

Abstract: MJE5850 MJE5852 MJE5850G MJE5851 MJE5851G MJE-5851 3003-50 MJE-5850
Contextual Info: MJE5850, MJE5851, MJE5852 MJE5851 and MJE5852 are Preferred Devices SWITCHMODEt Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated

222A Transistor

Abstract: JE5852
Contextual Info: MOTOROLA Order this document by MJE5850/D SEMICONDUCTOR TECHNICAL DATA M JE5850 M JE5851* M JE5852* D esigner’s Data Sheet S W IT C H M O D E S e rie s PNP S ilic o n P o w e r T ra n s is to rs ‘ Motorola Preferred Device 8 AMPERE PNP SILICON POWER TRANSISTORS

pnp 222A

Abstract: JE5850 an222a mje5851 transistor W01 transistor JE5851 JE-15028 JE-1502 je15028
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE5850 M JE5851* M JE5Ö52* D esigner’s Data Sheet SW ITCHM ODE S e rie s PNP Silico n Pow er T ran sisto rs 8 AMPERE PNP SILICON POWER TRANSISTORS 300,350,400 VOLTS 80 WATTS The MJE5850, MJE5851 and the MJE5852 transistors are designed for high-volt­

Contextual Info: MJE5850, MJE5851, MJE5852 SWITCHMODE Series PNP Silicon Power Transistors http://onsemi.com The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated

pnp 222A

Abstract: MJE5850 MJE5851G MJE5851 MJE5852G 1N4934 MJE15029 MJE5850G MJE5852
Contextual Info: MJE5850, MJE5851, MJE5852 MJE5851 and MJE5852 are Preferred Devices SWITCHMODEt Series PNP Silicon Power Transistors http://onsemi.com The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits

pnp 222A

Abstract: MJE-5850 MJE5852 MJE5851 1N4934 1N4937 MJE15028 MJE15029 MJE5850 MJE1502
Contextual Info: ON Semiconductor MJE5850 MJE5851 * MJE5852 * SWITCHMODEt Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated

MJE5850

Abstract: pnp 222A mje5852 mje5851 transistor mje150 MJE5852G equivalent MJE5851
Contextual Info: MJE5850, MJE5851, MJE5852 SWITCHMODE Series PNP Silicon Power Transistors http://onsemi.com The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated

tektronix 475

Abstract: pnp 222A 1N4934 1N4937 MJE15028 MJE15029 MJE5850 MJE5851 MJE5852 tr 222a
Contextual Info: ON Semiconductort MJE5850 MJE5851 * MJE5852 * SWITCHMODEt Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated

2sd880 equivalent

Abstract: tip3055 equivalent BU108 mje2055 2n3055 motor control circuits 2N6576 equivalent equivalent of 2sc2071 2N6107 equivalent BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5850 MJE5851* MJE5852*  Data Sheet Designer's SWITCHMODE Series PNP Silicon Power Transistors *Motorola Preferred Device 8 AMPERE PNP SILICON POWER TRANSISTORS 300, 350, 400 VOLTS 80 WATTS The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

ST-13002

Abstract: mje 340 transistor transistor d 13009 transistor mje 13003 transistor d 13007 STH11 ST13003 MJE 5740 STH16006A transistor E 13009
Contextual Info: SEMICONDUCTOR T EC H N O LO G Y , INC. SE MIC OND UC TO R TECHNOL OGY DSE D I fll3b45fl □ □ □ □ 2 3 3 5 I - 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

mps2112

Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry