TRANSISTOR BFW16A Search Results

multi-emitter transistor

Abstract: BFW16A BFW16 transistors BFW16A are mx hf no VCE18
Contextual Info: NPN BFW16A N-P-N H.F. WIDEBAND TRANSISTOR The BFW16A is NPN multi-emitter transistor in a TO-39 metal envolope, with the collector connected to the case. The transistor has extremely good intermodulation properties and a high power gain.It is a ruggedized version of the BFW16, which it succeds.

Contextual Info: Philips Sem iconductors bb53*131 □03212*1 STD • APX Product specification NPN 1 GHz wideband transistor BFW16A N AMER PHILIPS/DISCRETE DESCRIPTION blE D PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.

bfw16a philips

Abstract: BFW16A transistor bfw16a LB1936 vk200 philips bfw16a philips semiconductor ic 1014b Transistor D 798 transistor bq 17 1014b
Contextual Info: Philips Semiconductors Product specification T— 31— 17 NPN 1 GHz wideband transistor BFW16A SbE J> PHILIPS INTERNATIONAL 004L0n DESCRIPTIO N T32 • P H I N PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.

BFW16A

Abstract: TRANSISTOR C 1177 Transistor D 798 bfw16a philips
Contextual Info: Philips Semiconductors Product specification T 31 17 NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL SbE D DESCRIPTION MING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case. 1 The transistor has extremely good intermodulation properties and a

BFW16

Abstract: BFW16A
Contextual Info: BFW16A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI BFW16 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 150 mA VCBO 40 V VCER 40 V VCEO 25 V VEBO 3.0 V PDISS 0.7 W @ TA = 25 °C

transistor bfw16a

Abstract: transistors BFW16A vk200 philips BFW16A bfw16a philips bfw16a philips semiconductor ic 1014b vk200
Contextual Info: Philips Sem iconductors bbsa'm Product specification 003212'ì STO • APX NPN 1 GHz wideband transistor BFW16A N AMER P H ILIP S /D IS C R E T E DESCRIPTION t^ E PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

BFW16A

Abstract: bfw16 transistor bfw16a BFW 16
Contextual Info: BFW 16 A NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR , TRANSISTOR NPN SILIC IU M PLANAR EPITAXIAL Final stage of the wide band vertical amplifier in high speed osciloscope Etage de sortie du balayage vertical large bande pour oscilloscopes rapides v CEO 25 V

TRANSISTOR b 772 p

Abstract: bfw 16 transistor BFW 72 TRANSISTOR BFW 16
Contextual Info: E5C D • fi235bQS 0004725 1 H S I E 6 NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF BFW 16 A is an epitaxial NPN silicon planar RF transistor In TO 39 metal case 5 C 3 DIN 41873 intended for general applications up to the GHz range, e.g. for

bfw 106 c

Abstract: BFW16 Q62702-F319 transistor BFW 10 bfw16a
Contextual Info: E5C D fi235bQ5 Q0047ES 1 H S I E G • NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF ^^-'31-2.3 BFW 16 A is an epitaxial NPN silicon planar RF transistor in TO 39 metal case 5 C 3 DIN 41 87 3 intended for general applications up to the GHz range, e.g. for

BFW16A

Contextual Info: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 40.0 V NO. BFW16A Voltage, Collector to Emitter (VCE) 25.0 V TYPE NPN-RF Voltage, Emitter to Base (VEBO) 3.0 V empty empty Collector Current (IC) 0.3 A empty empty 0.05 A CASE TO-39

BFW16A

Abstract: LDTBFW16A LDTBFW16AT transistor bfw16a transistors BFW16A
Contextual Info: PRODUCT DATA Micro International, Inc PART NUMBER LDTBFW16A and LDTBFW16AT Micro-LID NPN Transistor Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com sales@microlid.com Micro-LID Transistors

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

2N4039

Abstract: 2N4303 2N4304 t018 transistor T018 2N4417 t071 uhf vhf amplifier 2N4038 2N4221
Contextual Info: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES

BFW16A

Abstract: TRANSISTOR BFW 16 Q62702-F319
Contextual Info: N P IS I-S iliz iu m -P la n a r-H F -T ra n sisto r BFW 16A BFW 16 A ist ein epitaktischer NPN-Silizium -Planar-HF-Transistor im Gehäuse 5 C3 DIN 41873 T O -39 für allgemeine Verwendung bis in den GHz-Bereich z. B. für Treiber- und Endstufen von Kanal- und Bereichsantennenverstärkern bis Bereich V, sowie für Vertikalverstärker-Endstufen in Breitband-Oszillografen. Der Kollektor ist mit dem Gehäuse leitend

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

BF547A

Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Contextual Info: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

smd npn 2n2222

Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
Contextual Info: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors