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    2N5397 Search Results

    2N5397 Datasheets (23)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N5397
    InterFET N-Channel silicon junction field-effect transistor Original PDF 92.21KB 1
    2N5397
    InterFET N-Channel Silicon Junction Field-Effect Transistor Original PDF 1.25MB 68
    2N5397
    Calogic N-Channel JFET High Frequency Amplifier Scan PDF 58.13KB 2
    2N5397
    Intersil N-channel JFET. High frequency amplifier. Scan PDF 65.06KB 2
    2N5397
    Intersil Shortform Data Book 1983/4 Short Form PDF 65.08KB 1
    2N5397
    Intersil Data Book 1981 Scan PDF 41.92KB 1
    2N5397
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 113.63KB 1
    2N5397
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 100.8KB 1
    2N5397
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 37.74KB 1
    2N5397
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 45.16KB 1
    2N5397
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 49.56KB 1
    2N5397
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 173.57KB 1
    2N5397
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 89.58KB 1
    2N5397
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 58.86KB 1
    2N5397
    National Semiconductor JFET RF, VHF, UHF Amplifiers Scan PDF 62.02KB 1
    2N5397
    National Semiconductor RF, VHF, UHF Amplifiers Scan PDF 76.96KB 2
    2N5397
    National Semiconductor N-Channel JFETs Scan PDF 459.91KB 11
    2N5397
    National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF 129.24KB 2
    2N5397
    Solitron Devices Low Power FET, RF Amplifiers, N-Channel FETS Scan PDF 75.91KB 1
    2N5397CHP
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 89.58KB 1
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    2N5397 Price and Stock

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    InterFET Corporation 2N5397

    JFETs JFET N-Channel -25V Low Ciss
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N5397 16
    • 1 $20.77
    • 10 $15.51
    • 100 $13.41
    • 1000 $12.69
    • 10000 $12.69
    Buy Now

    Vishay Siliconix 2N5397

    TRANSISTOR,JFET,N-CHANNEL,25V V(BR)DSS,30MA I(DSS),TO-72
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5397 4
    • 1 $7.50
    • 10 $5.00
    • 100 $5.00
    • 1000 $5.00
    • 10000 $5.00
    Buy Now

    Teledyne Defense Electronics 2N5397

    TRANSISTOR,JFET,N-CHANNEL,25V V(BR)DSS,30MA I(DSS),TO-72
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5397 1
    • 1 $7.50
    • 10 $5.00
    • 100 $5.00
    • 1000 $5.00
    • 10000 $5.00
    Buy Now

    New Jersey Semiconductor Products Inc 2N5397

    TRANSISTOR,JFET,N-CHANNEL,25V V(BR)DSS,30MA I(DSS),TO-72
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5397 1
    • 1 $7.50
    • 10 $5.00
    • 100 $5.00
    • 1000 $5.00
    • 10000 $5.00
    Buy Now

    National Semiconductor Corporation 2N5397

    TRANSISTOR,JFET,N-CHANNEL,25V V(BR)DSS,30MA I(DSS),TO-72
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5397 1
    • 1 $2.41
    • 10 $2.41
    • 100 $2.41
    • 1000 $2.41
    • 10000 $2.41
    Buy Now
    Vyrian 2N5397 2,900
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    2N5397 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N5396

    Abstract: 2n5397
    Contextual Info: 9-97 B 20 2N5397, 2N5398 N -C H A N N E L S IL IC O N J U N C T IO N FIELD-EFFECT T R A N SIST O R LOW NOISE HIGH POWER GAIN HIGH TRANSCONDUCTANCE MIXERS OSCILLATORS VHF AMPLIFIERS Absolute maximum ratings at T* * 25"C Reverse Gate Source & Reverse Gate Drain Voltage


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    2n53972n5398000074g2n5396 PDF

    2N5397 Texas

    Contextual Info: TYPE 2N5397 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 7 1 1 1 4 2 4 , A U G U S T 1971 FO R V H F A M P L IF IE R A N D M IX E R A P P L IC A T IO N S • High Power Gain . . . 15 dB Min at 450 MHz • Low Noise Figure . . . 3.5 dB Max at 450 MHz


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    2n53972n5397 texas PDF

    2N5397

    Abstract: SMP5398 2N5398 SMP5397 1na30
    Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-20 B-20 01/99 2N5397, 2N5398 N-Channel Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ ¥ ¥ Absolute maximum ratings at TA = 25¡C Low-Noise High Power Gain High Transconductance Mixers Oscillators VHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage


    Original
    2n53972n5398smp5397smp5398+11na30 PDF

    2N5397

    Contextual Info: 2N5397 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5397 Availability Online Store


    Original
    2n5397stv3208lm3909n PDF

    2N5397

    Abstract: 2NS397 2N5398
    Contextual Info: C A L OG I C 4ÖE CORP D 1Ô44322 G0 GG3 E 4 S mCGC N-Channel JFET High Frequency Amplifier CORPORATION V 2N5397 / 2N5398 calotfic • T-3>\-zS 2N5397/2N5398 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • Gps = 15dB Minimum (Common Gate) at 450MHz


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    2n53972n53982n5397/2n5398450mhz+12ns397 PDF

    2N5397

    Abstract: 2N5398 X2N5397 X2N5398
    Contextual Info: CALOGI C CORP 4ÖE D 1 ÔH4 3 S2 GGGG3E4 S mCGC N-Channel JFET High Frequency Amplifier CORPORATION ' * _ 2N5397 / 2N5398 /<m Ia#i^î/< C Q IO O IC • T-^2N5397/2N5398 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • Gps = 15dB Minimum (Comm on Gate) at 450MHz


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    h4352gg003242n5397/2n5398450mhz+710sec300mw2ns3972n53982n5397x2n5397x2n5398 PDF

    2n4391, Voltage controlled

    Abstract: sw 2n4093 2N5906
    Contextual Info: -Ælitran Devices. Inc. knot? ¥ ©[i[L[i©¥ tFcnr© ^©[D yj(gir ©attæmkqx IN TRO D U CTIO N TO TH E F E T S SDF1001 thru 1006 FOR SWITCHING In most switching applications it is d esirable to have a high O N -O FF-ratio. It is also desirable to b e ab le to switch both


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    sdf10012n43912n43932n4861+82n5s922n41192n59062ns4322n54332ns397-2n2n4391, voltage controlledsw 2n4093 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent PDF

    n-channel fet to-92

    Abstract: 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan
    Contextual Info: 1. DISCRETES Amplifiers— Junction FET Ordering Information Preferred Part Number Bis min Package n mho •g s s Vp m ín/m ax ta s s m in/max mA V max BVq s s min max Crss max n max pA V pF PF n v / s /líz" 4 C |SS N -c h a n n e l: 2N3684 TO-72 2N3685


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    2n36842n36852n36862n3687+14t0-722n38212n38222n3823n-channel fet to-922n4117afet j3102n5464j310 fet2n5485fet j2022n4119fet 2n54592n4117 jan PDF

    2n5105

    Abstract: 2N5245 2N5485 2N5670 pin 2N3819 2N3821 2N3822 2N3823 2N4223 2N4224
    Contextual Info: /ÄYM,© 1 ^©[nlÄMKlIlIL [FITP L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Case Type Style Humber (TO- Geometry 2N3819 72 2N3821» 72 2N3822» 72 2N3823« 72 2N4223 72 2N4224 72 72 2N4416 2N4416A 72 2N5078 72 2N5103 72 2N5104 72 72 2N5105


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    2n38192n38212n38222n3823+92n42232n42242n44162n4416a2n50782n51052n52452n54852n5670 pin PDF

    Contextual Info: N-CH ANNEL JU N C TIO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 021“ 0.533mm It is advisable that: a) the die be eutectically mounted with gold silicon prelonn 98/2%.


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    533mm0254mmflb02d0d41g3 PDF

    Contextual Info: SPRAGUE/SEMICOND 8514019 SPRAGUE. GROUP T3 D • f i S 1 3 ôSQ SEMICONDS/ ICS 93D GG 0 3 b l S 03615 b ■ j METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS Switches ELECTRIC/IL CHARACTERISTICS at TA = 25°C ^6S 0ff) Limits Ig s s V(BR)6SS Max. (V) -3 0 _ -8 .0


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    2n43932n48562n4856a2n4857+12n3824 PDF

    2N3819 equivalent

    Abstract: UC734 2N5668 2N5078 2N3822 equivalent 2n5105 2N5485 U1994E DSASW0036854 2N3821
    Contextual Info: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number TO (pF) Min (V) 2N3819 72 FN2.5 25 8.0 2N3821 72 FN3.6 50 6.0 2N3822 72 FN3.6 50 6.0 2N3823 72 FN2.5 30 6.0 2N4223 72 FN2.5 30 6.0 2N4224 72 FN2.5 30 6.0 2N4416 72 FN2.5 30 4.0 2N4416A 72 FN2.5 30


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    2n38192n38212n38222n3823+142n42232n42242n44162n4416a2n50782n51032n3819 equivalentuc7342n56682n3822 equivalent2n51052n5485u1994edsasw0036854 PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original
    mk135mk136mk137mk138+16mk139mk140mk142mk145mk155157krk2645k4005u664bmosfet k4005mb8719transistor mosfet k4004sn16880nstk5392str451bc417 PDF

    2N5911

    Abstract: Junction-FET 2N5397 2N5398 2N5912 U257 FS3D
    Contextual Info: -Ælitron [F> ®®[yj Tr N -C H A N N E L J U N C T IO N FET Devices. Inc. CHIP NUMBER IN CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . Hr (0.533mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


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    533mm0254mm2n5911junction-fet+52n53972n53982n5912u257fs3d PDF

    Contextual Info: N-Channel Metal Can JFET’s Part No. @ VD S & ID RDS on Min. Max. (V) (V) (V) (V) (nA) (Ω) 4.0 10.0 5 3.0 3.0 9.0 5 3.0 1.0 4.0 5 3.0 2N5432 2N5433 VP BVGSS Min. 25 2N5434 @ ID Ciss Max. Crss Max. to n Max. toff Max. Package (mA) (pF) (pF) (ns) (ns) Bulk


    Original
    2n54322n54332n54342n3686+62n38222n4118a2n4416a2n36842n51972n6485 PDF

    Digital Oscilloscope Preamp

    Abstract: L6518S interfet L6518SQ LMH6518 LMH6518SQ LMH6518SQE LMH6518SQX SQA16A InterFET Corporation
    Contextual Info: LMH6518 900 MHz, Digitally Controlled, Variable Gain Amplifier General Description Features The LMH6518 is a digitally controlled variable gain amplifier whose total gain can be varied from −1.16 dB to 38.8 dB for a 40 dB range in 2 dB steps. The −3 dB bandwidth is 900 MHz


    Original
    lmh6518digital oscilloscope preampl6518sinterfet+6l6518sqlmh6518sqlmh6518sqelmh6518sqxsqa16ainterfet corporation PDF

    2N3684

    Abstract: 2N3685 2N3686 2N3687 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A
    Contextual Info: THOMSON/ DISTRIBUTOR SÖE D T05t,fl73 □00S740 4SD TCSK Discrete Transistors Amplifier Transistors Junction FETs - N-Channel Vp V •d s s mA M ax >GSS pA M ax b v G SS V Min C|ss pF M ax C rss pF M ax -2 .0 -1 .0 -0 .6 -0 .3 -5 .0 -3 .5 -2 .0 -1 .2 -1 0 0


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    t0stifl7300s7402n36842n3685+82n36862n36872n41172n4117a2n41182n4118a2n41192n4119a PDF

    Contextual Info: ALLEGRO MICROSYSTEMS INC 85 14019 SPRAGUE. =13 D □SGM33Ô SEM ICO ND S/ IC S D003bl5 5 IALGR 93D 03615 j METAL-CASE JUNCTION FIELD-EFFECT TRA N SISTO R S N-Channel JFETs Switches ELECTRICAL CHARACTERISTICS at TA = 25°C loss V g S o!I) V(BR)G SS Device


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    sgm33d003bl52n38242n3966+62n39702n39712n39722n40912n40922n4093 PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent PDF

    2N6449

    Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
    Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


    Original
    2n38212n38222n6449mixer u350+8tr3202n48612n4858a2n4117 equivalentj231 2n54612n6450cd860smp5116 PDF

    Contextual Info: LMH6518 www.ti.com SNOSB21C – MAY 2008 – REVISED JULY 2013 LMH6518 900 MHz, Digitally Controlled, Variable Gain Amplifier Check for Samples: LMH6518 FEATURES DESCRIPTION • • • The LMH6518 is a digitally controlled variable gain amplifier whose total gain can be varied from −1.16


    Original
    lmh6518snosb21c PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680 PDF

    2N5397

    Abstract: 2N5398
    Contextual Info: E SOLI » □1 S T AT E D Ey3fl75aa]i cm:Lcm3 5 | 01E 3875081 G E SOLID STATE 10993 T - J / - * 2-T D N-Channel JF E T High Frequency Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • G ps= 15dB Minimum Com mon Gate at 450MHz • L ow N oise • L ow Capacitance


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    3fl75dfll2n53972n5398450mhz+210sec300mw PDF