TRANSISTOR 43A Search Results

TRANSISTOR 43A Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR 43A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
transistor L6 Abstract: BFQ43 CES10 BLW31 00B3-2 Contextual Info: bSE t> m ?iiD fisb □D t.an ? 43a • p h in BLW31 PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters w ith a nominal supply voltage of 13,5 V , Because o f the high gain and excellent power	OCR Scan	711002b BLW31 BFQ43 transistor L6 CES10 BLW31 00B3-2	PDF
BUK465-60H Contextual Info: Product specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose	OCR Scan	BUK465-60H OT404 BUK465-60H	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
Sprague Electric Abstract: Pirgo Electronics Contextual Info: API ELECTRONICS INC . v?=r :43A0135 ; 13 de 0111435^2 4\| ' ' ' rUWtKIKANÌUIUK ENGINEERINGBULLETIN - - $ INTERIM BU LLETIN * Subject to Revision Without Notice . - J u ly T5, 1971 pi n DG r-i w 0w -• ELECTROniCSIliC. TYPE 1162, 7 AMP POWER DARLINGTON PLANAR TRANSISTOR	OCR Scan	0D43Sc1S 000013b Sprague Electric Pirgo Electronics	PDF
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606	PDF
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram	PDF
2SC2631 Abstract: 2SA1123 Contextual Info: Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm ● ● ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO.	Original	2SC2631 2SA1123 100MHz 2SC2631 2SA1123	PDF
2SA1123 Abstract: 2SC2631 Contextual Info: Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm ● ● ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO.	Original	2SC2631 2SA1123 2SA1123 2SC2631	PDF
transistor 2sa720 Contextual Info: Transistor 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 Unit: mm 5.0±0.2 5.1±0.2 • Features Symbol Collector to 2SA0719 base voltage	Original	2SA0719, 2SA0720 2SA719, 2SA720) 2SC1317 2SC1318 2SC1318. 2SA0719 2SA0720 transistor 2sa720	PDF
2SA1128 Contextual Info: Transistor 2SA1128 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm • Features Low collector to emitter saturation voltage VCE sat . Optimum for low-voltage operation and for converter circuits. ■ Absolute Maximum Ratings	Original	2SA1128 2SA1128	PDF
2sd965 transistor Abstract: 2SD965 2SD96 transistor 2sd965 Contextual Info: Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm ● Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the low-voltage power supply.	Original	2SD965 2sd965 transistor 2SD965 2SD96 transistor 2sd965	PDF
2SA1128 Contextual Info: Transistor 2SA1128 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm • Features Low collector to emitter saturation voltage VCE sat . Optimum for low-voltage operation and for converter circuits. ■ Absolute Maximum Ratings	Original	2SA1128 2SA1128	PDF

2SA1018 Abstract: 2SC1473 2SA1767 2SC1473A TRANSISTOR 2sc1473 Contextual Info: Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm • Features High collector to emitter voltage VCEO. High transition frequency fT. ■ Absolute Maximum Ratings	Original	2SC1473, 2SC1473A 2SC1473 2SA1018 2SC1473A 2SA1767 2SC1473 2SA1018 2SA1767 TRANSISTOR 2sc1473	PDF
2SB621 Abstract: 2SB621A 2SD592 2SD592A Contextual Info: Transistor 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD592 and 2SD592A Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE sat . High transition frequency fT. • Absolute Maximum Ratings	Original	2SB621, 2SB621A 2SD592 2SD592A 2SB621 2SB621 2SB621A 2SD592A	PDF
AOD4140 Contextual Info: AOD4140 TM N-Channel SDMOS POWER Transistor General Description Features The AOD4140 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology	Original	AOD4140 AOD4140 O-252	PDF
2SA1123 Abstract: 2SC2631 2sa1123 transistor Contextual Info: Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm ● ● ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO.	Original	2SA1123 2SC2631 2SC2631, 2SA1123 2SC2631 2sa1123 transistor	PDF
2SA1127 Abstract: 2SC2634 Contextual Info: Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 5.0±0.2 Low noise characteristics. High foward current transfer ratio hFE. • Absolute Maximum Ratings Ta=25˚C Parameter	Original	2SA1127 2SC2634 2SA1127 2SC2634	PDF
2SA0720A Abstract: 2SA720A 2SC1318A Contextual Info: Transistor 2SA0720A 2SA720A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm 5.0±0.2 • Absolute Maximum Ratings 0.7±0.1 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO	Original	2SA0720A 2SA720A) 2SC1318A 2SA0720A 2SA720A 2SC1318A	PDF
2SC1473 Abstract: TRANSISTOR 2sc1473 2SA1767 2SA1018 2SC1473A Contextual Info: Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm • Features High collector to emitter voltage VCEO. High transition frequency fT. ■ Absolute Maximum Ratings	Original	2SC1473, 2SC1473A 2SC1473 2SA1018 2SC1473A 2SA1767 2SC1473 TRANSISTOR 2sc1473 2SA1767 2SA1018	PDF
2SA1127 Abstract: Low-Frequency Low-Noise PNP transistor 2SC2634 2SC263 Contextual Info: Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 5.0±0.2 Low noise characteristics. High foward current transfer ratio hFE. • Absolute Maximum Ratings Ta=25˚C Parameter	Original	2SA1127 2SC2634 Cha400 2SA1127 Low-Frequency Low-Noise PNP transistor 2SC2634 2SC263	PDF
2SC1359 Abstract: 2SC1359 C 2SA838 Contextual Info: Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA838 Unit: mm • Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. ■ Absolute Maximum Ratings Ta=25˚C Parameter	Original	2SC1359 2SA838 100MHz 2SC1359 2SC1359 C 2SA838	PDF
2SA720 Abstract: 2SA719 2SC1317 2SC1318 transistor 2sa720 Contextual Info: Transistor 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 Unit: mm 5.0±0.2 Complementary pair with 2SC1317 and 2SC1318. Parameter Ta=25˚C Symbol Collector to	Original	2SA719, 2SA720 2SC1317 2SC1318 2SC1318. 2SA719 2SA720 2SA719 2SC1318 transistor 2sa720	PDF

TRANSISTOR 43A Search Results

TRANSISTOR 43A Result Highlights (5)

TRANSISTOR 43A Datasheets Context Search

MN1280

oz960

transistor L6

BUK465-60H

2N2222A 338

Sprague Electric

RJP63k2

RJJ0319DSP

2SC2631

2SA1123

transistor 2sa720

2SA1128

2sd965 transistor

2SA1128

2SA1018

2SB621

AOD4140

2SA1123

2SA1127

2SA0720A

2SC1473

2SA1127

2SC1359

2SA720