2SC1473A Search Results

2SC1473

Abstract: 2SA1018 2SA1767 2SC1473A TRANSISTOR 2sc1473
Contextual Info: Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 High collector to emitter voltage VCEO. High transition frequency fT.

2sc1473

Abstract: 2sa1473
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2

2SA1767

Abstract: 2SC1473A
Contextual Info: Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473A Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. • Absolute Maximum Ratings 13.5±0.5 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage

2SA1767

Abstract: 2SC1473A
Contextual Info: Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473A Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. • Absolute Maximum Ratings 13.5±0.5 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1767 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2

2SA1018

Abstract: 2SA1767 2SC1473 2SC1473A SC-43A 2SA1473
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C

2SA1018

Abstract: 2SC1473 2SA1767 2SC1473A TRANSISTOR 2sc1473
Contextual Info: Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm • Features High collector to emitter voltage VCEO. High transition frequency fT. ■ Absolute Maximum Ratings

2SA1018

Abstract: 2SA1767 2SC1473 2SC1473A SC-43A 2SA1473
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1767 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473A Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 • Features d

2SA1767

Abstract: 2SC1473A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1767 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473A Unit: mm ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

2SA1767

Abstract: 2SC1473A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1767 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473A Unit: mm ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 M

2sa1473

Abstract: 2SC1473 2SA1473A R 2SA1018 2SA1767 2SC1473A SC-43A 2SA1473A
Contextual Info: Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage Base open VCEO • High transition frequency fT

2sa1767

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1767 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • High collector-emitter voltage (Base open) VCEO

2SA1767

Abstract: 2SC1473A
Contextual Info: Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473A Unit: mm 5.0±0.2 0.7±0.1 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –300 V Collector to emitter voltage VCEO –300 V

2SA1767

Abstract: 2SC1473A
Contextual Info: Transistors 2SA1767 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • High collector-emitter voltage Base open VCEO 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

an6512n

Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Contextual Info: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

NEC 2532

Abstract: Ka 2535 2SC2240 2SC2460b 2SC2939 2SC2538 2SC1914A 2sc2238 2sc2555 2SC2407
Contextual Info: - tt B ÌL B tL B « M anuf. € = ¡ M £ T ype No. 2SC 2511 2SC 2512 2SC 2516 ^ 2SC 2517 # 2SC 2518 * * 2SC 2519 2SC 2522 2SC 2522A 2SC 2523 y 2SC 2527 y 2SC 2528 X * 2SC 2529 + 2SC 2530 ^ 2SC 2531 2SC 2532 ✓ 2SC 2534 r 2SC 2535 „ 2SC 2536 2SC 2537 2SC 2538

2SC1417

Abstract: 2SC1438 2SC1451 2SC1429 2N6256 2SC1494 2SC1497 2SA773 2SC1425 2SC1452
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 200W 2SC1401 400 5 30A 175 25 5 15A 20* (Tc=25ºC) 70W 2SC1402 140 6 8A