2S721
Abstract: bdy11 TO53 to-53 TO5-3 KT932A SDT5913
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CE on hFE fT ICBO Max Max k>N Max ON) Min (Hz) (A) (s) PD r (CE)Mt Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts r More, (Cont'd) . . . .5 . . . .10 . . . .15 .
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st4502s0132n23832s721+82s7232n3138bdy11to53to-53to5-3kt932asdt5913
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TO82 TRANSISTOR
Abstract: TO82 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C
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25mqsa2n10152n1015a2n1015b+92n1015c2n1015d2n19042n19362n19372n2015to82 transistorto822n2227
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TO82 TRANSISTOR
Abstract: npn 2N2383 2N2753 2NXXXX 2N1069 TO53 transistor 2n2383 2n1117 2N1620 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE |ù 2 5 M Q S a 0 00 07=11 M J ' ^ T g ^ T p f leMax Amps VCECHSUS Polarity 2N1015 2N1015A 2N1015B 2N1015C
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e6djp073l254d222n10152n1015a+162n1015b2n1015c2n1015d2n1015e2n10162n1016ato82 transistornpn 2n23832n27532nxxxx2n1069to53transistor 2n23832n11172n16202n2227
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to-53
Abstract: TO111 2N5978 NPN
Contextual Info: POWER SILICON TRANSISTORS Item Number »C Part Number Manufacturer Type Max A V (BR)CEO on PD Max hFE fT ON) Min (Hz) r •CBO Max (A) Max (s) (CE)sat Max (Ohms) T Oper Package Style Max (°C) D vie s 20 Watts or More, (Cont'd) . . .5 . .10 . . . -15 -20
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2n41122sa1069k2sa12o-111+3to-53to1112n5978 npn
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BD947
Abstract: to-53 a/TO111
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) hFE fT ICBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)«at Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 .15 .
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sdt3762sdt3752sdt1641sdt3305+3bd947to-53a/to111
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b0345
Abstract: B0815 to-53 TO53 2SC840 KT934V Matsua 2SC840 2S0288
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N1711B 2SC1419 2SC1419 2Nl085 2S0330 2S0331 BSS1S NSOS179 ~~g~~~oo 25 30 SK32SS 2S011S0Y 92GU45A 2S0288 2S0289 KT9340 KT934V B0827-10 ~~~~~~7 35 40 SML5512 SML5902 SML5907 SML5912 ST440 ST450 2S013
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b0373a2ns70592pe37ab0375-10+10b037mo-12sb0345b0815to-53to532sc840kt934vmatsua 2sc8402s0288
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anzac 112
Abstract: TO53 anzac sw-112 ANZAC h-81-4 ANZAC h-9
Contextual Info: n/A-COn INC/ AJ/aH ' ANZAC H V S IE Ï • 5M5177 0003511 lat ■ ANZ ANZAC RF& CELLULAR COMPONENTS RF Control Devices SPST S w itc h e s MODEL NO. SW-121 SW-161 SW-211 SW-213 SW-341 SW-342 SW-344 SW-367 SW-111 SW-131 SW-209 SW-209B SW-212 SW-214 SWS-278"
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5m5177sw-121sw-161sw-211+11sw-213sw-341sw-342sw-344sw-367sw-111anzac 112to53anzac sw-112anzac h-81-4anzac h-9
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b0239c
Abstract: diode GG 66 diode 2U 66 MEAB to-53 2U 39 diode
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N5000 2N5150 2N5602 2N5154 2N6717 92GU06 92PU06 B0379-16 ~~~~~ 30 SOT5513 SOT5513 SOT5913 B0379-25 2SC3474 2S01914 2S01981 SK3512 - :g~~:~ - 25 35 -40 45 -50 RCA1A03 S2N4863-2 S2N4863-3 SMl5509 SMl5514
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ot5503ot59032n64092s01516+6b0239cdiode gg 66diode 2u 66meabto-532u 39 diode
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2SB5950
Abstract: 2SD5250 2SB616 NEC 2SD586 to-53 2SC940 NEC 2sb616 2SB595Y 2SB616 2SD586 2SD52
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO (A) (V) PD Max hFE *T ON) Min (Hz) 'CBO t0N r (CE)sat Toper Max Max (A) (s) Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . -10 . . .15
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sdt6316sdt6416sml1643sml1653+132sb7472n12112n16172sb59502sd52502sb616 nec2sd586to-532sc940 nec2sb6162sb595y2sb616 2sd5862sd52
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SW203
Abstract: TO53 to-53 SW201
Contextual Info: GaAs SPDT Switch DC-2 GHz SW-201/203 ● ● ● V 2.00 TO-5-3 Features Fast Switching Speed, 6 ns Typical Ultra Low DC Power Consumption Low Loss SW-201 , Terminated (SW-203) Guaranteed Specifications * (From -55°C to +85°C) Frequency Range Model Number
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sw-201/203sw-201sw-203mil-std-883+4sw203to53to-53sw201
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2SD1039
Abstract: to-53 BUW64A
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220
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2sc19842n42332sb761a2sb929a+82sb941a2sd1252a2sd1266a2sd856abdt31b2sd1039to-53buw64a
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TO53
Contextual Info: A ß C GaAs SPST Switch DC-3 GHz SW-211/213 • Fast Switching Speed, 6ns Typical ■ Ultra Low DC Power Consumption ■ Low Loss SW-211 , Terminated (SW-213) TO-5-3 0.36 (9 14 ±0.5) 0.200 MAX (sjL t ' 0 500 WIN (12 7) Guaranteed Specifications* (From - 55°C to +85°C)
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anzac 112
Abstract: SW-367 TO53 SW-111 SW-121 SW-161 SW-211 SW-213 SW-341 SW-342
Contextual Info: tl/A-COM INC/ ANZAC HIV 51E 1> • 5M5177 ODDSS^ ant - ANZ ANZAC RF& CELLULAR COMPONENTS RF Control Devices SPST Switches INSERTION LOSS dB TYP FREQUENCY RANGE (MHz) St/GaAs SW-121 SW-161 SW-211 SW-213 SW-341 SW-342 SW-344 SW-367 SW-111 SW-131 SW-209 SW-209B
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sw-121sw-161sw-211dc-2000+7sw-213sw-341sw-342anzac 112sw-367to53sw-111
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b0944
Abstract: b0946 SM2177 RCA1C13 rca1c04 to-53 2n3191 2SA1120 Motorola 2N6297 2N3183
Contextual Info: POWER SILICON PNP Item Part Number Number I C 5 10 - >= 20 2S81095M MJE253 2S8860 RCA1C04 2S81095L 2S81168 2S81216 2S81095K ~~~~~ 25 30 RCA1C13 SK3626 2N6468 2N6476 SM2177 NA62U NA62W 80S18 BDS19 I(C) 35 40 50 2SA1357Y 80944 B0944 B0944F MJD210 MJD21 0-1
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mje703t2n62972s811022s8908+14s1237mje254ot3729ot3757b0944b0946sm2177rca1c13rca1c04to-532n31912sa1120motorola 2n62972n3183
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BC177 NPN transistor
Abstract: BC377 2S026 transistor 200mhz 100w 2n930 TRANSISTOR bc177b IC202 to-53
Contextual Info: Search Results Part number search for devices beginning "2N918A" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N918ACSM NPN LCC1 15V 0.003A 20 - 1/3m 600MHz
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2n918a2n918acsm2n918acsm-jqr-b2n918adcsm+11600mhz2n918aqf75mhzbc177 npn transistorbc3772s026transistor 200mhz 100w2n930transistor bc177bic202to-53
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TO53
Contextual Info: M an A M P com pany GaAs SPST Switch DC - 3 GHZ SW-211/213 Features TO-5-3 • Fast Switching Speed. 6 ns Typical • Ultra Low DC Pow er Consum ption • Low Loss .SW-211 , Term inated (SW-213) Guaranteed Specifications* (From 55°c to +85°c) Frequency Range
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SW-203
Abstract: SW203
Contextual Info: W an A M P com pany GaAs SPDT Switch DC-2 G Hz SW-201/203 TO-5-3 Features • Fast S w itc h in g S peed, 6 ns T y p ic a l V 2.00 0.36 DIA. , 9 .1 4 ± 0 . 5 \ | n . X " - - • U ltra L o w DC P o w e r C o n s u m p tio n 0 .200 MAX (5.08 i • L o w Loss (SW-201 ), T r n iu n :iu - |I (S W -iO .i)
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TO53
Abstract: 504 BC
Contextual Info: Mfecm m an A M P com pany GaAs SPST Switch DC-3 GHz SW-211/213 V 2.00 TO-5-3 Features • PIN 6 f 0.200 MAX ' 5.08 Fast S w itch in g S p e e d , 6 ns T ypical • Ultra Low DC P o w e r C o n su m p tio n • l,ow Loss (S W -2 1 1 ), T e rm in a te d (S W -213)
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81 211 W 07
Contextual Info: f a n A M P ,c o m p a n y GaAs SPST Switch DC - 3 GHZ SW-211/213 V2.00 Features TO-5-3 • F astSw itching S p e ed , 6 n s T y p ic a l • U Jtta Low DC Pow erC o n su m p t b n • Low L oss SW -2 1 1 , Temi inated (SW -213) Guaranteed Specifications* (From55 c to+85°c)
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2SA1012Y
Abstract: 2SA1012-Y to-53 2SB116 2N3180 2N3184
Contextual Info: POWER SILICON PNP Item Number Part Number I{C 5 10 >= 5 A, 2SB1165 2SB1203 2SA1012Y 2SA1244Y MJ2268 SML3708 SML3711 SML3704 SML3727 SML3776 ~~t~~~~ 15 20 SML3702 SML3751 2N3176 2N3180 2N3180 2N3180 2N3184 2N3188 ~~~~~~ 25 30 SDT3722 SDT3722 SDT3722 SDT3730
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TO111
Abstract: 2SD189 to-53 2SC647 2SD772B
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD hFE fT •CBO Max ON) Min (Hz) (A) r Max (s) Max (CE)sat Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or Mor , (Cont'd) . . . .5 -10 2SD772 2SD772A
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TIC 115
Abstract: BD117 to-53 HSE2000 ss2017 2N396 tic 115 d bd112
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) Max (W) hFE Min *T (Hz) Max k>N Max (A) (8) ICBO r (CE)sa« 'Oper Max (Ohms) Max <°C) Package Style D vices 20 Watts or Mor . . . .5 . . . -10 . . .15 20 -25 -30
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SW-355
Abstract: BC 584
Contextual Info: H/A-COM/ MICROELECTRONICS bTE » • SbME103 Q0ÛD7D1 7TD «I1ACO GaAs DPDT Switch DC-2 GHz SW-355 TO-5-3 Features • Fast Switching Speed, 10 ns Typical • Ultra Low DC Power Consumption • Low Insertion Loss Guaranteed Specifications1 -55°ct0+85°o
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sbm21d00g7d1sw-355transienb37+1bc 584
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2SD369A
Abstract: to-53 2SC1025 MJE2491 KT816V matsua
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A PD r 'CBO Max hFE fT on ON) Min (Hz) 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 40 40 40 40 40 25 40 40 40 40 40 60 60 10 10 10 10 10 20 20 20 20 25 25 2 0M 10M 10M 1 0M 3 0M
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