TO53 PACKAGE Search Results

2S721

Abstract: bdy11 TO53 to-53 TO5-3 KT932A SDT5913
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CE on hFE fT ICBO Max Max k>N Max ON) Min (Hz) (A) (s) PD r (CE)Mt Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts r More, (Cont'd) . . . .5 . . . .10 . . . .15 .

TO82 TRANSISTOR

Abstract: TO82 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C

to-53

Abstract: TO111 2N5978 NPN
Contextual Info: POWER SILICON TRANSISTORS Item Number »C Part Number Manufacturer Type Max A V (BR)CEO on PD Max hFE fT ON) Min (Hz) r •CBO Max (A) Max (s) (CE)sat Max (Ohms) T Oper Package Style Max (°C) D vie s 20 Watts or More, (Cont'd) . . .5 . .10 . . . -15 -20

BD947

Abstract: to-53 a/TO111
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) hFE fT ICBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)«at Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 .15 .

2SB5950

Abstract: 2SD5250 2SB616 NEC 2SD586 to-53 2SC940 NEC 2sb616 2SB595Y 2SB616 2SD586 2SD52
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO (A) (V) PD Max hFE *T ON) Min (Hz) 'CBO t0N r (CE)sat Toper Max Max (A) (s) Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . -10 . . .15

SW203

Abstract: TO53 to-53 SW201
Contextual Info: GaAs SPDT Switch DC-2 GHz SW-201/203 ● ● ● V 2.00 TO-5-3 Features Fast Switching Speed, 6 ns Typical Ultra Low DC Power Consumption Low Loss SW-201 , Terminated (SW-203) Guaranteed Specifications * (From -55°C to +85°C) Frequency Range Model Number

2SD1039

Abstract: to-53 BUW64A
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220

TO53

Contextual Info: A ß C GaAs SPST Switch DC-3 GHz SW-211/213 • Fast Switching Speed, 6ns Typical ■ Ultra Low DC Power Consumption ■ Low Loss SW-211 , Terminated (SW-213) TO-5-3 0.36 (9 14 ±0.5) 0.200 MAX (sjL t ' 0 500 WIN (12 7) Guaranteed Specifications* (From - 55°C to +85°C)

anzac 112

Abstract: SW-367 TO53 SW-111 SW-121 SW-161 SW-211 SW-213 SW-341 SW-342
Contextual Info: tl/A-COM INC/ ANZAC HIV 51E 1> • 5M5177 ODDSS^ ant - ANZ ANZAC RF& CELLULAR COMPONENTS RF Control Devices SPST Switches INSERTION LOSS dB TYP FREQUENCY RANGE (MHz) St/GaAs SW-121 SW-161 SW-211 SW-213 SW-341 SW-342 SW-344 SW-367 SW-111 SW-131 SW-209 SW-209B

TO53

Contextual Info: M an A M P com pany GaAs SPST Switch DC - 3 GHZ SW-211/213 Features TO-5-3 • Fast Switching Speed. 6 ns Typical • Ultra Low DC Pow er Consum ption • Low Loss .SW-211 , Term inated (SW-213) Guaranteed Specifications* (From 55°c to +85°c) Frequency Range

SW-203

Abstract: SW203
Contextual Info: W an A M P com pany GaAs SPDT Switch DC-2 G Hz SW-201/203 TO-5-3 Features • Fast S w itc h in g S peed, 6 ns T y p ic a l V 2.00 0.36 DIA. , 9 .1 4 ± 0 . 5 \ | n . X " - - • U ltra L o w DC P o w e r C o n s u m p tio n 0 .200 MAX (5.08 i • L o w Loss (SW-201 ), T r n iu n :iu - |I (S W -iO .i)

TO53

Abstract: 504 BC
Contextual Info: Mfecm m an A M P com pany GaAs SPST Switch DC-3 GHz SW-211/213 V 2.00 TO-5-3 Features • PIN 6 f 0.200 MAX ' 5.08 Fast S w itch in g S p e e d , 6 ns T ypical • Ultra Low DC P o w e r C o n su m p tio n • l,ow Loss (S W -2 1 1 ), T e rm in a te d (S W -213)

TO111

Abstract: 2SD189 to-53 2SC647 2SD772B
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD hFE fT •CBO Max ON) Min (Hz) (A) r Max (s) Max (CE)sat Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or Mor , (Cont'd) . . . .5 -10 2SD772 2SD772A

TIC 115

Abstract: BD117 to-53 HSE2000 ss2017 2N396 tic 115 d bd112
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) Max (W) hFE Min *T (Hz) Max k>N Max (A) (8) ICBO r (CE)sa« 'Oper Max (Ohms) Max <°C) Package Style D vices 20 Watts or Mor . . . .5 . . . -10 . . .15 20 -25 -30

2SD369A

Abstract: to-53 2SC1025 MJE2491 KT816V matsua
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A PD r 'CBO Max hFE fT on ON) Min (Hz) 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 40 40 40 40 40 25 40 40 40 40 40 60 60 10 10 10 10 10 20 20 20 20 25 25 2 0M 10M 10M 1 0M 3 0M

BD160

Abstract: 2SC3303 2SD1147 to-53 2sb550
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO Max Max toN Max ON) Mln (Hz) (A) (8) PD r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .

Contextual Info: Aßeßm GaAs DPDT Switch DC-2 GHz SW-355 TO-5-3 Features • Fast Switching Speed, 10 ns Typical • Ultra Low DC Power Consumption • Low Insertion Loss Guaranteed Specifications1 sscto+ssc D C - 2 . 0 GHz

Contextual Info: m an A M P com pany GaAs SPDT Switch DC-2 GHz SW-224/225 V 2.01 Features TO-5-3 • L o w In s e r tio n L o ss, 0 .5 d B T y p ic a l 0.018 ± 0.005 0 .4 6 1 0 .1 3 • L o w D C P o w e r (C o n s u m p tio n Guaranteed Specifications * B O TTO M VIEW

SW-224

Abstract: SW-225
Contextual Info: GaAs SPDT Switch DC-2 GHz TO-5-3 Features ● ● ● SW-224/225 Low Insertion Loss, 0.5 dB Typical Integral TTL Driver Low DC Power Consumption 0.018 ± 0.005 0.46 ± 0.13 BOTTOM VIEW (From -55°C to +85°C) DC-2 GHz 0.8 dB Max 0.7 dB Max 0.7 dB Max 1.5:1 Max

Contextual Info: A fa m an A M P o GaAs SPOT Switch DC - 2 GHz SW-224/225 Features TO-5-3 • Low In sertio n Loss, 0.5 dB T ypical • Integral TTL D river • Low DC P o w e r C o n su m p tio n • MIL-STD-883 S creen in g A vailable 0.36 DIA 9 .1 4 ± 0.5 Guaranteed Specifications1

M513

Abstract: SW-224 SW-224-PIN SW-225 SW-225-PIN TO53
Contextual Info: RoHS Compliant GaAs SPDT Switch, DC - 2 GHz SW-224-PIN/SW-225-PIN V3 Features • • • • • TO-5-3 SW-224 Low Insertion Loss, 0.5 dB Typical Integral TTL Driver Low DC Power Consumption 50 Ohm Nominal Impedance MIL-STD-883 screening available Description

Contextual Info: m an A M P com pany GaAs DPDT Switch DC - 2 GHz SW-355 V 2.00 TO-5-3 Features • Fast S w itc h in g S p e e d , 10 n.s T y p ical • U ltra L ow DC P o w e r C o n s u m p tio n • Low In s e rtio n Loss Guaranteed Specifications' -55°C to +85°C D C - 2 . 0 GHz

2N389

Abstract: 2N389 - 2N389A 2N1250 2n1211
Contextual Info: £mi~Conductoi tPioduati, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N389 - 2N389A 2N424 - 2N424A 2N1210-2N1211 2N1250 TYPE NO. PT MAXIMUM RATINGS @ 25°C SVcao BVCEO BVEBO Ic V V V

Contextual Info: TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/ 262 Devices Qualified Level 2N1722 JAN JANTX 2N1724 MAXIMUM RATINGS Ratings Symbol Value Units VCEO VCBO VEBO IC PT 80 175 10 5.0 3.0 50 175 -65 to +200 Vdc Vdc Vdc Adc W W Collector-Emitter Voltage