BD951 Search Results

BD951

Abstract: BD949 BD950 BD952 BD953 BD954 BD955 BD956
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956

BD951

Abstract: BD952 pnp 500ma 40v
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD952 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·DC Current Gain: hFE= 40(Min)@ IC= -500mA ·Complement to Type BD951 APPLICATIONS ·Designed for power amplifier and switching applications

Contextual Info: BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952,954,956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0,90

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS

951F

Contextual Info: BD949F; BD951F ^BD953F; BD955F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SO T 186 envelope w ith an electrically insulated mounting base. PNP complements are B D 950F, BD 952F, BD 9 5 4 F and BD 956F. Q U IC K R E F E R E N C E D A T A

bd955

Abstract: BD953F bd950 BD949F BD950F BD951F BD952F BD954F BD955F BD956F
Contextual Info: BD949F; BD951F BD953F; BD955F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SOT 186 envelope with an electrically insulated mounting base. PNP complements are BD950F, BD952F, BD954F and BD956F. QUICK REFERENCE DATA 953F 955F 60

HU09

Abstract: bd955 BD953F BD949F BD950F BD951F BD952F BD954F BD955F BD956F
Contextual Info: BD949F; BD951F BD953F; BD955F PHILIPS INTERNATIONAL SbE D I 7110fl2b 0 0 4 3 1 0 b ST3 « P H I N T- SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each ina SOT186 envelope with an electrically insulated mounting base. PNP complements are BD950F, BD952F, BD954F and BD956F.

bd955

Abstract: BD955F 952F BD949F BD950F BD951F BD953F BD954F
Contextual Info: BD950F;952F SbE D PHILIPS INTERNATIONAL • R D Q fid F - QÇ>RF 711D02ti 0 0 4 3 1 1 b 432 H P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SOT186 envelope w ith an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F.

b0951

Abstract: bu508at b0949 BD243B BD243C BD949 BD951 BD953 BD955 BU406
Contextual Info: TO-220 Power Package Transistors NPN . Electrical Characteristic« (Ta=25*C, Unless Otherwise Specified) Maximum Ratings Type No. t Pd (W) (V) Min Tc=25°c (A) 80 5 65 100 100 5 BD949 60 60 BD951 80 BD953 'coo (HA) Max *Ve a Min Max fc» (A) « 'c (mA)

BD951

Abstract: BD952 BD949 BD950 BD953 BD954 BD955 BD956
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS

T1P110

Abstract: BD243B BD243C BD949 BD951 BD953 BD955 BU406 BU407 BU505
Contextual Info: TO-220 Power Package Transistors NPN Electrical Characteristics (T»=25"C, Unless Otherwise Specified) Maximum Ratings Type No. PB (W) Tc=25°c V C80 ^CEO ^EBO (V) Mifl (V) Min (V) Min BD243B 80 80 5 65 BD243C 100 100 5 BD949 60 60 BD951 80 BD953 'c80

BD954

Contextual Info: BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 L BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications PIN CO N FIG U RA TIO N 1. BASE 2. C O L L E C T O R 3. EM ITTER

952F

Abstract: bd955 BD949F BD950F BD951F BD953F BD954F BD955F 956F 954F
Contextual Info: BD950F; 952F BD954F; 956F I^ SILICON EPITAXIAL POWER TRANSISTORS PNP Silicon power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F. Q U ICK R E F E R E N C E D A TA Collector-base voltage

B0952

Abstract: b0951 BD951 BD954 b0949 B0950 bd955 npn transistors,pnp transistors BD949 BD950
Contextual Info: CDU BD949, 951, 953, 955 BD950, 952, 954, 956 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications PIN C O N FIG U R AT IO N 1. B A S E 2. C O L L E C T O R

BD955

Abstract: NPN Transistor TO220 VCEO 80V 100V 2a 100v NPN BD949 BD951
Contextual Info: BD949 BD953 BD951 BD955 MECHANICAL DATA Dimensions in mm SILICON EPITAXIAL BASE 9.65 10.66 4.82 5.33 3.83 Dia. 4.08 4.19 4.82 NPN POWER TRANSISTORS 1.14 1.39 9.01 9.52 12.70 13.71 2.66 3.42 1.01 Rad. 1.52 1 2 3 NPN Transistors in a plastic TO–220 package.

Contextual Info: BD949F; BD951F BD953F; BD955F PHILIPS INTERNATIONAL SbE D I 7110fl2b 004310b ST3 « P H I N SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 9 5 0 F , B D 9 5 2 F , BD 954F and B D 956F.

JE3055T

Abstract: je13007
Contextual Info: TO-220 Power Package Transistors NPN Electrical Characteristic« (Ta=25'C, Unless Otherwise Specified) Maximum Ratings Type No. ^CBO V CE0 ^EBO (V) Min (V) Min (V) Min BD243B 80 80 5 65 BD243C 100 100 5 BD949 60 60 BD951 80 BD953 h EE e Min Max 'c* (A) V CE

T1P42C

Abstract: bd534j T1P102
Contextual Info: TO-220 PIN CO N FIG U R ATIO N 1. B A S E 2. C O L L E C T O R 3. EM ITTER 4. C O L L E C T O R c ,01 0 -I MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 DIM E A B C D E F G H J K L M N 3 G - 1,15 3,75 2,29 2,54 12,70

T1P42C

Contextual Info: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink