JE13007 Search Results

Contextual Info: Æ T S G S - T H O M S O N D ISÌ S IIL[1CTISÌ ÌD©S M JE13007A SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION The JE13007A is silicon multiepitaxial mesa

mje 3007

Abstract: l3007 I3007 je13007 transistor mje13007 equivalent MJE 340 transistor MJE13007D bipolar power transistor vce 600 volt
Contextual Info: MOTOROLA Order this document by JE13007/D SEMICONDUCTOR TECHNICAL DATA M JE13007 M JF13007 Designer’s Data Sheet SWITCH MODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high-voltage, high-speed power switching

E13007

Abstract: E 13007 F13007 F 13007 SEC E 13007 - 2 transistor MJ 13007 equivalent 13007 je13007 mj 13007 transistor E 13007
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE13007 M JF13007 Designer’s Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: FI 73232J7 D D gqiO q g • ^ 3 SGS-THOMSON «[B miOT KS 3 - MJE13006 JE13007/A S G S-THOMSON 3GE D MOTOR CONTROL, SWITCH REGULATORS DESC RIPTIO N The MJE13006, JE13007 and JE13007Aare si­ licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten­

e13009

Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and

Contextual Info: N AUER PHILIPS/DISCRETE, BSE D • QOlbEEl fl ■ T~3 I Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1,5V at 4A /0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4 A /0.8A 180ns at 4A

JE350

Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
Contextual Info: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168

Contextual Info: Power T r a n s is t o r s - - M JE 1 3 0 0 7 HARRIS SEMICOND File N um ber SECTOR 2?E » B 4302271 D OS DMb b 15.90 6 MHAS T -S 5 - ' 3 H igh-Speed Silicon N-P-N

TIPI27

Contextual Info: TOSHIBA {DISCRETE/OPTO! ' ÌQ d | ^7250 0GlbLH3 5 | ~ T- z ? - 2 5 K2E3S3S Sm all Signal Transistor Type No, Vceo SOT-23MOD TO-92 V (mA) HFE V ce(V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 100-300 1.0 10 2N3905 YTS3905 -4 0

Contextual Info: f Z 7 SCS-THOMSON ^7# MJE13006 JE13007/A [» ^ iy iO T ® K S MOTOR CONTROL, SWITCH REGULATORS DESCRIPTION The MJE13006, JE13007 and JE13007A are si­ licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten­

MJE13007

Abstract: MJE-13007 13006 TRANSISTOR mje13007 TRANSISTOR MJE13006 transistor 13006 MJE13007Q
Contextual Info: [ [ ^^53131 Q Q n i 3 1 D EV ELO P M EN T DATA a MJE13006 JE13007 T his data sheet contains advance information and specifications are subject to change without notice. N AMER PHILIPS/DISCRETE 2SE D T-33-I3 SILICO N DIFFUSED POWER TRAN SISTO R High-voltage, high-speed glass-passivated npn power transistor in a T 0 -2 2 0 envelope, intended for use

MJE520

Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
Contextual Info: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic

MJE13007E

Abstract: JE13006 MJE13Q07 JE13007
Contextual Info: MOTOROLA SC XSTRS/R 1EE F D I b3b72S4 a G fl SB T S ê | T - 33-13 MOTOROLA MJE13006 JE13007 SEMICONDUCTOR TECHNICAL DATA D esigners Data, Sheet 8 AM PERE NPN SILICON POWER TRANSISTORS 3 00 and 4 0 0 V O L T S 80 W ATTS SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.

2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905

U/25/20/TN26/15/850/yd 803 ic

Abstract: BUX22M JE13005 JE802 TIP+317+data+sheet bu808df1 je200 2n5337 S13003 2N6057
Contextual Info: G E N E R A L P U R P O S E T R A N S IS T O R S TY PE ‘c V CE V CEsat 8 A (V) (V) 'o (A) 'b Rthj-c (mA) rc / w ) V CE0 V CB0 'c (V) (V) (A) 22 22 4 BD433 BD434 50 2.00 1.0 0.50 2.00 200 25 40 5 M JE200 M JE210 70 0.50 1.0 0.30 0.50 50 30 30 3 M JE520

JE3055T

Abstract: je13007
Contextual Info: TO-220 Power Package Transistors NPN Electrical Characteristic« (Ta=25'C, Unless Otherwise Specified) Maximum Ratings Type No. ^CBO V CE0 ^EBO (V) Min (V) Min (V) Min BD243B 80 80 5 65 BD243C 100 100 5 BD949 60 60 BD951 80 BD953 h EE e Min Max 'c* (A) V CE