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    BUV298A Search Results

    BUV298A Datasheets (11)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BUV298A
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 80.61KB 1
    BUV298A
    Philips Semiconductors Silicon Diffused Power Transistors Scan PDF 62.69KB 3
    BUV298AF
    STMicroelectronics NPN Transistor Power Module Scan PDF 359.52KB 8
    BUV298AV
    STMicroelectronics NPN TRANSISTOR POWER MODULE Original PDF 401.16KB 7
    BUV298AV
    STMicroelectronics NPN TRANSISTOR POWER MODULE Original PDF 104.18KB 7
    BUV298AV
    STMicroelectronics NPN TRANSISTOR POWER MODULE Original PDF 93.97KB 7
    BUV298AV
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 80.61KB 1
    BUV298AV
    Philips Semiconductors Silicon Diffused Power Transistors Scan PDF 62.69KB 3
    BUV298AV
    Philips Semiconductors High Speed, High Voltage Transistors Scan PDF 60.97KB 1
    BUV298AV
    STMicroelectronics NPN Transistor Power Module Scan PDF 359.52KB 8
    BUV298AV
    STMicroelectronics Shortform Data Book 1988 Short Form PDF 45.9KB 1
    SF Impression Pixel

    BUV298A Price and Stock

    STMicroelectronics

    STMicroelectronics BUV298AV

    Power Bipolar Transistor, 96A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian BUV298AV 2,331
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    BUV298A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: N AUER PHILIPS/DISCRETE t.'lE D bbS3T31 DD2fl51E 47b H A P X BUV298 V BUV298A(V) SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended for use in inverters, converters and motor control applications on 220 V to 380 V mains supply.


    OCR Scan
    bbs3t31dd2fl51ebuv298buv298a PDF

    SOT-227A

    Abstract: BUV298A BUV298 BUV298AV BUV298V High-Current
    Contextual Info: N AflER L.'iE PHILIPS/DISCRETE D • bbS3T31 QQ2 Ö5 1 E 47b ■ BUV298 V BUV298A(V) SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated IS O T O P package; intended fo r use in inverters, converters and m o to r co n tro l ap p licatio n s on 22 0 V to 38 0 V m ains supply.


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    bbs3t31buv298buv298asot-227a+3buv298avbuv298vhigh-current PDF

    BUV298AV

    Contextual Info: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:


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    buv298av PDF

    BUV298AV

    Contextual Info: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original
    buv298av PDF

    BUV298AV

    Contextual Info: BUV298AV  NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


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    buv298av PDF

    BUV298AV

    Contextual Info: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


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    buv298av PDF

    sot-227a

    Abstract: sot227a 298AV BUV298 BUV298A BUV298AV BUV298V
    Contextual Info: bìE D N AMER PHILIPS/DISCRETE DDEÖ51E 47b • APX BUV298 V BUV298A(V) ■ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m o to r co n tro l applications on 220 V to 38 0 V mains supply.


    OCR Scan
    buv298buv298asot-227asot227a+3298avbuv298avbuv298v PDF

    BUV298A

    Abstract: BUV298 T227A
    Contextual Info: I I P H I L IP S INTERNATIONAL 4SE D E3 7 1 1 0 0 2 b 0 0 3 1 1 3 7 3 E3PHIN BUV298 V BUV298A(V) T-33-/S SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended for use in inverters, converters and m otor control applications on 220 V to 380 V mains supply.


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    buv298buv298at-33-/sot227b+3298aivtyp2500t227a PDF

    ad 303 transistor

    Contextual Info: rz7 S G S -T H O M S O N R [LiOT iQ £I ^ 7# BUV298AV NPN TRANSISTOR POWER MODULE . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


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    buv298avsc04830ad 303 transistor PDF

    Contextual Info: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:


    Original
    buv298av PDF

    tb rbb

    Abstract: BUV298AF BUV298AV BUV298A
    Contextual Info: 3DE ì> m 7RSt1237 QGBDMIM Ô • fZ 7 ^ 7# S G S -T H O M S O N sLTH0M i i N_ U V 2 9 8 A F [Rifln [^@[l[LllCT[^@lROD©S T - 3 3 - 1 5 BUV298AV NPN TRANSISTOR POWER MODULE ■ H IG H C U R R E N T P O W E R B IP O L A R M O D U L E ■ V E R Y L O W Rth J U N C T IO N C A S E


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    7r2c1237uv298af33-i5buv298av+6buv298afsc04s30t-91-20o-240tb rbbbuv298a PDF

    welding rectifier schematic

    Abstract: schematic diagram UPS SMPS 30 smps circuit diagram BUV298AV
    Contextual Info: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


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    buv298avwelding rectifier schematicschematic diagram upssmps 30+1smps circuit diagram PDF

    Contextual Info: / S T SGS-THOMSON c o r a m i * ! BUV298AV NPN TRANSISTOR POWER MODULE • HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rm JUNCTION CASE « SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE


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    buv298av PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171buv48ibu808dxibd699buv18abd241cfitransistor 2sa1046buw52ibu808dfi equivalentbu724as2sa1046 PDF

    fw26025

    Abstract: FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH
    Contextual Info: Power bipolar transistors TO-264 Device type NPN VCEO [V] PNP HD1530JL* HD1750JL* 700 800 VCBO VCES VCEV [V] IC [A] 1500 1700 26 24 hFE @ IC VCE Ptot [W] 200 200 VCE sat @ IC IB Application Min Max [A] [V] [V] [A] [mA] 5.5 5.5 9 9.5 13 12 5 5 2 3 13 12 3250


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    o-264hd1530jlhd1750jlo-220+16ot-223o-220fpot23-6lo-126o-220fhisowatt218fw26025fw26025afw26025a1 equivalentfw26025a1st5027st1802fxst2310fxmd1803dfxbul312fpbu808dfh PDF

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


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    1n8211n821a1n8231n823a+161n8251n825a1n8271n827a1n8291n829abf0262abf0262om3351n5821idom336om2061om926buk645om2060bly94 PDF

    BUX98PI

    Abstract: ESM2012DV BUX98P ESM2030DV D45HS mj2955 TO-220 ESM2030 buw90
    Contextual Info: SELECTION GUIDE BY PART NUMBER DEVICE TYPE {V Vc-ao VcES VcEV V) 450 450 450 450 450 60 80 125 90 125 125 250 200 250 125 400 450 700 400 450 400 450 450 700 450 450 450 450 200 400 60 80 45 60 ao 1000 1000 1000 850 1000 120 160 250 160 250 160 300 250 300


    OCR Scan
    buv98avbuv98vbuv298avbuv298v+13buw12abuw48buw49buw50buw89buw90bux98piesm2012dvbux98pesm2030dvd45hsmj2955 to-220esm2030 PDF

    mje520

    Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
    Contextual Info: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen­ hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50


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    bd433mje200mje520bd435+152n49212im51902im6037mje521mje180bd135sgs1f444sgsd00030e13008but232m3771but62buw42ap2n5337buw32ap PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    sc08btransistor f6 13003equivalent transistor bj 131-6transistor eb 13003 bm+7bb112smd transistor code marking 2f 6na1211 lgcqy58bu705transistor 131-6 bj 026philips om350 PDF

    buw13a philips semiconductor

    Abstract: 180NS mje13008 BUS12 BUS12A BUT12 BUT12A BUT18 BUS13 BUT18AF
    Contextual Info: N AUER PHILIPS/DISCRETEL ESE D • bbS HÌBl 001b521 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4A/0.8A 180ns at 4A


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    s3t31but18o-220ab180ns+11but18abut18fot-186but18afbut12buw13a philips semiconductormje13008bus12bus12abut12abus13 PDF

    BUX98PI

    Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
    Contextual Info: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490


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    2n30552n34392n34402n3771+162n37722n49232n50382n51532n51542n5191bux98pitip147tbu808dfi equivalent2n3055 to-2202n3055 to-218 packagefluorescent ballast mje13007tip3055 to-220st1803dhi equivalentbu508afi equivalentbu808dfi PDF

    STE38NA50

    Abstract: STE90N25 STF8045DV ste24n90 ESM6045DV STE45N50 ESM4045AV ESM2012DV ESM2030DV ESM3030DV
    Contextual Info: TRANSISTORS POWER MODULES BIPOLAR IN ISOTOP For other conf. Conf. D A B A D B D D D D D D A A A C A C C B VCEO VCEV IC Ptot VCE sat @ IC / IB (V) (V) (A) (W) (V) (A) 125 125 125 300 300 300 300 450 450 450 450 450 450 450 450 450 450 450 450 450 150 200


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    ste250n06ste180n10ste150n10ste100n20+13ste90n25ste50n40ste53na50ste47n50ste45n50ste38na50stf8045dvste24n90esm6045dvesm4045avesm2012dvesm2030dvesm3030dv PDF

    Contextual Info: N AUER PHILIPS/DISCRETE, BSE D • QOlbEEl fl ■ T~3 I Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1,5V at 4A /0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4 A /0.8A 180ns at 4A


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    180nsot-93400nsbuv298av+4buv298vot-227b1-220abbut18f PDF

    DK53

    Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
    Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


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    2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171dk53dk522sc4977mje102bd6992sa1046bu808dfi equivalent2n3055 replacementmj2955 replacementbuh513 PDF