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    ad 303 transistor

    Contextual Info: rz7 S G S -T H O M S O N R [LiOT iQ £I ^ 7# BUV298AV NPN TRANSISTOR POWER MODULE . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan     		buv298avsc04830ad 303 transistor PDF

    BUF298F

    Abstract: BUF298V 3641B
    Contextual Info: 3QE rz 7 ^ 7# D • QÜ3D33Ô 7 S C S -T H O M S O N K œ iL lû lM K S s G S TH0MS0N 3 U F 2 9 8 F BUF298V 'T -'S s^S NPN TRANSISTOR POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE « SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ISOLATED CASE 2500V RMS


    OCR Scan     		0q30333uf298fbuf298vbuf298f+4sc04830t-91-20o-2403641b PDF

    BUT30

    Contextual Info: SGS-THOMSON BUT30V NPN TRANSISTOR POWER MODULE > HIGH CURRENT POWER BIPOLAR MODULE > VERY LOW Rih JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS • ISOLATED CASE 2500V RMS . EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE 4 INDUSTRIAL APPLICATIONS:


    OCR Scan     		but30vsc04830but30 PDF