BUV298 Search Results

schematic diagram motor control

Abstract: schematic diagram motor BUV298V JESD97
Contextual Info: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance

Contextual Info: N AUER PHILIPS/DISCRETE t.'lE D bbS3T31 DD2fl51E 47b H A P X BUV298 V BUV298A(V) SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended for use in inverters, converters and motor control applications on 220 V to 380 V mains supply.

Contextual Info: SCS-THOMSON û iRâmi©IFlis iû êS BUV298V NPN TRANSISTOR POWER MODULE . NPN TRANSISTOR . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE (2500V RMS) • EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE

SOT-227A

Abstract: BUV298A BUV298 BUV298AV BUV298V High-Current
Contextual Info: N AflER L.'iE PHILIPS/DISCRETE D • bbS3T31 QQ2 Ö5 1 E 47b ■ BUV298 V BUV298A(V) SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated IS O T O P package; intended fo r use in inverters, converters and m o to r co n tro l ap p licatio n s on 22 0 V to 38 0 V m ains supply.

BUV298V

Contextual Info: BUV298V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS:

BUV298AV

Contextual Info: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:

BUV298AV

Contextual Info: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:

BUV298AV

Contextual Info: BUV298AV  NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:

Contextual Info: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance

BUV298AV

Contextual Info: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:

sot-227a

Abstract: sot227a 298AV BUV298 BUV298A BUV298AV BUV298V
Contextual Info: bìE D N AMER PHILIPS/DISCRETE DDEÖ51E 47b • APX BUV298 V BUV298A(V) ■ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m o to r co n tro l applications on 220 V to 38 0 V mains supply.

BUV298A

Abstract: BUV298 T227A
Contextual Info: I I P H I L IP S INTERNATIONAL 4SE D E3 7 1 1 0 0 2 b 0 0 3 1 1 3 7 3 E3PHIN BUV298 V BUV298A(V) T-33-/S SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended for use in inverters, converters and m otor control applications on 220 V to 380 V mains supply.

ad 303 transistor

Contextual Info: rz7 S G S -T H O M S O N R [LiOT iQ £I ^ 7# BUV298AV NPN TRANSISTOR POWER MODULE . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

welding equipment smps schematic

Contextual Info: BUV298V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:

tb rbb

Abstract: BUV298AF BUV298AV BUV298A
Contextual Info: 3DE ì> m 7RSt1237 QGBDMIM Ô • fZ 7 ^ 7# S G S -T H O M S O N sLTH0M i i N_ U V 2 9 8 A F [Rifln [^@[l[LllCT[^@lROD©S T - 3 3 - 1 5 BUV298AV NPN TRANSISTOR POWER MODULE ■ H IG H C U R R E N T P O W E R B IP O L A R M O D U L E ■ V E R Y L O W Rth J U N C T IO N C A S E

welding rectifier schematic

Abstract: schematic diagram UPS SMPS 30 smps circuit diagram BUV298AV
Contextual Info: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:

SOT-227A

Abstract: BUV298 BUV298A BUV298AV BUV298V
Contextual Info: PHILIPS INTERNATIONAL HSE D Q 711002b 0031137 3 Q PHIN BUV298 V BU V298A(V) ^ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m otor control applications on 220 V to 380 V mains supply.

Contextual Info: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance

Contextual Info: SG S-TH O M SO N BUV298V [MOiglM&lieratMD NPN TRANSISTOR POWER MODULE . . . . . . . NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

BUV298V

Contextual Info: BUV298V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE

IC SO5

Abstract: FOR TRANSISTOR BC 149 B transistor Bc 287 R3315 BUV298F BUV298V JUV298F transistor BC 583
Contextual Info: 30E D • 7121237 G03GMQÔ 2 WÊ SCS-THOMSON J _ Ü ^ H0"S«NJUV298F HLKgüWWi T-3S'i5 BUV298V NPN TRANSISTOR POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS

Contextual Info: / S T SGS-THOMSON c o r a m i * ! BUV298AV NPN TRANSISTOR POWER MODULE • HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rm JUNCTION CASE « SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE

Contextual Info: r = 7 ^ 7 S G S -T H O M S O N R m o ra « # BUV298V NPN TRANSISTOR POWER MODULE . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R,h JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

BUV298CV

Contextual Info: r z 7 S G S - T H O M Ä 7# S O N B U V2 9 8 CV RfflOGIHimiCTMOSS NPN TRANSISTOR POWER MODULE ADVANCE DATA . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,hJUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE