BD950F Search Results

538L

Contextual Info: BD950F; 952F _ LI PHILIPS INTERNATIONAL SbE D • R nQ fidF-3 5 S E _ 7 1 1 D Ô 2 k> D D M 3 1 1 b 432 ■ P H I N - — SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SO T186 envelope w ith an electrically insulated mounting base.

bd955

Abstract: BD953F bd950 BD949F BD950F BD951F BD952F BD954F BD955F BD956F
Contextual Info: BD949F; BD951F BD953F; BD955F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SOT 186 envelope with an electrically insulated mounting base. PNP complements are BD950F, BD952F, BD954F and BD956F. QUICK REFERENCE DATA 953F 955F 60

HU09

Abstract: bd955 BD953F BD949F BD950F BD951F BD952F BD954F BD955F BD956F
Contextual Info: BD949F; BD951F BD953F; BD955F PHILIPS INTERNATIONAL SbE D I 7110fl2b 0 0 4 3 1 0 b ST3 « P H I N T- SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each ina SOT186 envelope with an electrically insulated mounting base. PNP complements are BD950F, BD952F, BD954F and BD956F.

bd955

Abstract: BD955F 952F BD949F BD950F BD951F BD953F BD954F
Contextual Info: BD950F;952F SbE D PHILIPS INTERNATIONAL • R D Q fid F - QÇ>RF 711D02ti 0 0 4 3 1 1 b 432 H P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SOT186 envelope w ith an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F.

952F

Abstract: bd955 BD949F BD950F BD951F BD953F BD954F BD955F 956F 954F
Contextual Info: BD950F; 952F BD954F; 956F I^ SILICON EPITAXIAL POWER TRANSISTORS PNP Silicon power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F. Q U ICK R E F E R E N C E D A TA Collector-base voltage

BD954F

Abstract: ic 812 TRANSISTOR S 812 954F BD950F BD952F BD956F bd94 812W BD95
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD950F/952F/954F/956F DESCRIPTION •DC Current Gain: hFE= 40 Min @ IC= -500mA ·Complement to Type BD949F/951F/953F/955F APPLICATIONS ·Designed for power amplifier and switching applications

Contextual Info: BD950F; 952F BD954F;956F _ SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F.

Contextual Info: BD950F Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60è V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

to-53

Abstract: TO111 2N5978 NPN
Contextual Info: POWER SILICON TRANSISTORS Item Number »C Part Number Manufacturer Type Max A V (BR)CEO on PD Max hFE fT ON) Min (Hz) r •CBO Max (A) Max (s) (CE)sat Max (Ohms) T Oper Package Style Max (°C) D vie s 20 Watts or More, (Cont'd) . . .5 . .10 . . . -15 -20

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

2SA1012Y

Abstract: 2SA1012-Y to-53 2SB116 2N3180 2N3184
Contextual Info: POWER SILICON PNP Item Number Part Number I{C 5 10 >= 5 A, 2SB1165 2SB1203 2SA1012Y 2SA1244Y MJ2268 SML3708 SML3711 SML3704 SML3727 SML3776 ~~t~~~~ 15 20 SML3702 SML3751 2N3176 2N3180 2N3180 2N3180 2N3184 2N3188 ~~~~~~ 25 30 SDT3722 SDT3722 SDT3722 SDT3730