2SB116 Search Results

2SB1160

Abstract: 2SD1715
Contextual Info: JMnic Product Specification 2SB1160 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1715 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications

2SB1162

Abstract: 2SD1717
Contextual Info: Inchange Semiconductor Product Specification 2SB1162 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SD1717 ・Excellent linearity of hFE ・Wide area of safe operation ASO ・High transition frequency fT APPLICATIONS

2sb1163

Abstract: 2SD1718
Contextual Info: Inchange Semiconductor Product Specification 2SD1718 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SB1163 ·Excellent linearity of hFE ·Wide area of safe operation ASO ·High transition frequency fT APPLICATIONS ·For high power amplifier applications

Contextual Info: Transistors SMD Type Product specification 2SB1169A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High forward current transfer ratio hFE which has satisfactory linearity. +0.1 0.60-0.1 2.3 3 .8 0 +0.15

2043A

Abstract: 2SB1165
Contextual Info: Ordering number:2046A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1165/2SD1722 50V/5A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2043A Features [2SB1165/2SD1722] · Low collector-to-emitter saturation voltage.

2SB1161

Abstract: 2SD1716
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1161 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1716 APPLICATIONS

2SD1116

Contextual Info: Ordering number:ENN2047A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1167/2SD1724 100V/3A Switching Applications Features Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2043B Features [2SB1167/2SD1724] 8.0 4.0 2.0 2.7 1.5

D1722

Abstract: 2SB1165 B116 ua 722 fc
Contextual Info: O rdering num ber: EN2046A 2SB1165/2SD1722 PNP/NPN Epitaxial Planar SiliconTransistors 50V/5A Switching Applications Applications . Relay drivers, high-speed inverters, converters Features . Low collector-to-emitter saturation voltage . High fT . Excellent linearity of hFE

2SD1723

Abstract: 2043B 2SB1166
Contextual Info: Ordering number:ENN2021A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1166/2SD1723 50V/8A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2043B Features [2SB1166/2SD1723] 8.0 4.0 2.0 2.7

2SB1162

Abstract: 2SD1717
Contextual Info: JMnic Product Specification 2SB1162 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SD1717 ・Excellent linearity of hFE ・Wide area of safe operation ASO ・High transition frequency fT APPLICATIONS ・For high power amplifier applications

2SB1161

Abstract: 2SD1716
Contextual Info: 2SD1716 2 SD 17 1 6 '> IJ u V N P N = . n f à m 7 ° l'— t - M / S i N P N T r ip le D iffu se d P la n a r P ow er A m plifier 1 jt > •? ') /C o m p le m e n ta r y P air w ith 2SB1161 2 S B llf il t Zl ■ 4$ ig /F e a tu r e s • i t i £ * ? l i i l |l § 4 5 h F E C 7 )[tlg 'l4 * ?S f t T

2SB1162

Abstract: 2SD1717 2SD171
Contextual Info: 2SD 1717 2SD1717 '> V □ N PN — i ~ l & / S i N P N T r i p l e D if f u s e d P l a n a r P ow er A m plifier C om plem entary P air w ith 2SB1162 [2SB1162 |fl # h 3 .0 - ^ /F ea tu res 4 liiit* * iiili^ h F E C O J : Exceptionally good linearity of hrE

2sb1163

Abstract: 2SD1718
Contextual Info: 2SD1718 2SD1718 '> V □ > N PN Si NPN Triple Diffused Planar P ow er A m plifier 2SB1163 t ^ > y° U ^ ^ U /C o m p le m e n ta ry P air w ith 2SB1163 I 4$ 3.0- ^ /F e a tu re s if hFE r>-&m&t>'mishx i • Exceptionally good linearity of Iife • 5- S ! ASO i ^ i ^ ’o /W id e area of safe operation (ASO)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1169, 2SB1169A Silicon PNP epitaxial planar type For power amplification Unit : mm 7.0±0.3 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat)

2SA1302 TOSHIBA

Abstract: 2SA1302 Toshiba 2Sa1302 SB 1156 2sb817 2SB863 2SB1371 mitsubishi 1183 2SB1407 2SB1201
Contextual Info: - 64 - S € Type No. tt « Manuf. H # SANYO M S TOSHIBA S NEC S ÏZ HITACHI 8 ± Ü FUJITSU fé T MATSUSHITA 2SB 1 1 4 « fé T 2SB 1149— ' « 2S6 1151 , B « 2SB1165 2SB 1152 «5 T 2SB817 2SB 1153 fé T 2SB 1155" fâ T 2SB 1156 - fé T 2SB 1157 fé T 2SB776

2SD1718

Abstract: 2SB1163
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1163 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1718 APPLICATIONS

Contextual Info: O rdering num ber: EN2048A 2SB1168/2SD1725 NO .2048A PNP/NPN EpitaxialPlanar SiliconTransistors 100V/4A Switching Applications Applications . Relay drivers, high-speed inverters, converters Features . Low collector-to-emitter saturation voltage . High fT . Excellent linearity of hpg

Contextual Info: Power Transistors 2SB1169, 2SB1169A b<ï32aS2 0 G lb 2 3 3 S8b 2SB1169, 2SB1169A Silicon PNP Epitaxial Planar Type Package Dim ensions Pow er Amplifier U nit : mm • Features • High DC current gain I i f e and good linearity • Low collector-emitter voltage ( V c e )

2SB1166

Abstract: D172
Contextual Info: O rdering num ber: EN2021A 2SB1166/2SD1723 PNP/NPN Epitaxial Planar Silicon Transistors NO.2021A 50V/8A Switching Applications Applications . Relay drivers, high-speed inverters, converters Features . Low collector-to-emitter saturation voltage . High fT . Excellent linearity of hpE

2SB1169

Abstract: 2SB1169A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1169, 2SB1169A Silicon PNP epitaxial planar type For power amplification Unit : mm M Di ain sc te on na tin nc ue e/ d 7.0±0.3 • High forward current transfer ratio hFE which has satisfactory linearity

TA7553

Abstract: 2043b 2SB1167 2SD1724 TO-126LP
Contextual Info: Ordering number:ENN2047A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1167/2SD1724 100V/3A Switching Applications Features Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2043B Features [2SB1167/2SD1724] 8.0 4.0 2.0 2.7 1.5

2SB1162

Abstract: 2SD1717
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1162 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1717 APPLICATIONS

2SD1716

Abstract: 2SB1161
Contextual Info: SavantIC Semiconductor Product Specification 2SB1161 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1716 ·High fT ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION

2SD1715

Abstract: 2SB1160
Contextual Info: SavantIC Semiconductor Product Specification 2SD1715 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SB1160 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications